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公开(公告)号：US20140124736A1
公开(公告)日：2014-05-08
申请号：US14150954
申请日：2014-01-09
IPC分类号： H01L29/775 , H01L29/06
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0669 , H01L29/0673 , H01L51/0003 , H01L51/0048 , H01L51/0545
摘要： Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.
摘要翻译： 碳纳米管可以与半导体制造工艺的兼容性相一致，具有用于形成较小器件的可扩展性，并且与结构损坏相关的性能下降不受影响。 形成包括掩埋栅电极和两个嵌入电极的平面结构。 在形成栅极电介质之后，沿着通过在两个嵌入电极之间施加电压而产生的交流（AC）电场的方向将碳纳米管组装在栅极电介质的表面上的溶液中。 源极接触电极和漏极接触电极通过在碳纳米管的两端上沉积导电材料而形成。 源极和漏极接触电极中的每一个可以与下面的嵌入式电极电短路以减小寄生电容。
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公开(公告)号：US08987705B2
公开(公告)日：2015-03-24
申请号：US14150954
申请日：2014-01-09
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0669 , H01L29/0673 , H01L51/0003 , H01L51/0048 , H01L51/0545
摘要： Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.
摘要翻译： 碳纳米管可以与半导体制造工艺的兼容性相一致，具有用于形成较小器件的可扩展性，并且与结构损坏相关的性能下降不受影响。 形成包括掩埋栅电极和两个嵌入电极的平面结构。 在形成栅极电介质之后，沿着通过在两个嵌入电极之间施加电压而产生的交流（AC）电场的方向将碳纳米管组装在栅极电介质的表面上的溶液中。 源极接触电极和漏极接触电极通过在碳纳米管的两端上沉积导电材料而形成。 源极和漏极接触电极中的每一个可以与下面的嵌入式电极电短路以减小寄生电容。
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