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    ADVANCED INTERCONNECT WITH AIR GAP
    1.
    发明申请
    ADVANCED INTERCONNECT WITH AIR GAP 审中-公开
    高级互连与空气隙

    公开(公告)号：US20150162277A1

    公开(公告)日：2015-06-11

    申请号：US14098286

    申请日：2013-12-05

    申请人： International Business Machines Corporation ,  STMicroelectronics, Inc.

    发明人： John H. Zhang ,  Yann Mignot ,  Lawrence A. Clevenger ,  Carl Radens ,  Richard Stephen Wise ,  Yiheng Xu ,  Yannick Loquet ,  Hsueh-Chung Chen

    IPC分类号： H01L23/528 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

    CPC分类号： H01L21/0217 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of an air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the air gap is used as an insulator between adjacent metal lines, while a ULK film is retained to insulate vias. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer.

    摘要翻译： 在高性能集成电路中用作层间电介质的超低k电介质材料容易在结构上不稳定。 这种材料的杨氏模量降低，导致孔隙率，差的膜强度，开裂和空隙。 一种替代的双镶嵌互连结构将气隙结合到高模量介电材料中以保持结构稳定性，同时减小相邻纳米线之间的电容。 结合k = 1.0的气隙补偿使用介电常数大于典型的超低k（ULK）介电值约2.2的介电常数的较高模量的膜。 含有气隙的较高模量的膜用作相邻金属线之间的绝缘体，同时保留ULK膜以绝热通孔。 因此，两个相邻金属线之间的电介质层形成ULK /高模量介电双层。

    Trench interconnect having reduced fringe capacitance
    4.
    发明授权
    Trench interconnect having reduced fringe capacitance 有权
    具有降低的边缘电容的沟槽互连

    公开(公告)号：US09214429B2

    公开(公告)日：2015-12-15

    申请号：US14098346

    申请日：2013-12-05

    申请人： STMicroelectronics, Inc. ,  International Business Machines Corporation

    发明人： John H. Zhang ,  Hsueh-Chung Chen ,  Lawrence A. Clevenger ,  Yann Mignot ,  Carl Radens ,  Richard Stephen Wise ,  Yannick Loquet ,  Yiheng Xu

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76879 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates deep air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of a deep air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the deep air gap is used as an insulator and a means of reducing fringe capacitance between adjacent metal lines. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer.

    摘要翻译： 在高性能集成电路中用作层间电介质的超低k电介质材料容易在结构上不稳定。 这种材料的杨氏模量降低，导致孔隙率，差的膜强度，开裂和空隙。 一种替代的双镶嵌互连结构将深空气隙结合到高模量介电材料中以维持结构稳定性，同时减小相邻纳米线之间的电容。 结合k = 1.0的深空气间隙补偿使用介电常数大于典型的超低k（ULK）介电值约2.2的介电常数的较高模量的膜。 使用含有深空气间隙的较高模量的膜作为绝缘体和减少相邻金属线之间的条纹电容的装置。 因此，两个相邻金属线之间的电介质层形成ULK /高模量介电双层。

    TRENCH INTERCONNECT HAVING REDUCED FRINGE CAPACITANCE
    5.
    发明申请
    TRENCH INTERCONNECT HAVING REDUCED FRINGE CAPACITANCE 有权
    具有减少的FRINGE电容的TRENCH INTERCONNECT

    公开(公告)号：US20150162278A1

    公开(公告)日：2015-06-11

    申请号：US14098346

    申请日：2013-12-05

    申请人： International Business Machines Corporation ,  STMicroelectronics, Inc.

    发明人： John H. Zhang ,  Hsueh-Chung Chen ,  Lawrence A. Clevenger ,  Yann Mignot ,  Carl Radens ,  Richard Stephen Wise ,  Yannick Loquet ,  Yiheng Xu

    IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76879 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates deep air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of a deep air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the deep air gap is used as an insulator and a means of reducing fringe capacitance between adjacent metal lines. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer.

    摘要翻译： 在高性能集成电路中用作层间电介质的超低k电介质材料容易在结构上不稳定。 这种材料的杨氏模量降低，导致孔隙率，差的膜强度，开裂和空隙。 一种替代的双镶嵌互连结构将深空气隙结合到高模量介电材料中以维持结构稳定性，同时减小相邻纳米线之间的电容。 结合k = 1.0的深空气间隙补偿使用介电常数大于典型的超低k（ULK）介电值约2.2的介电常数的较高模量的膜。 使用含有深空气间隙的较高模量的膜作为绝缘体和减少相邻金属线之间的条纹电容的装置。 因此，两个相邻金属线之间的电介质层形成ULK /高模量介电双层。