公开(公告)号：US20130154008A1

公开(公告)日：2013-06-20

申请号：US13717917

申请日：2012-12-18

Applicant: Intersil Americas Inc.

Inventor： Yu Li ,  Steven Howard Voldman

IPC: H01L23/60

CPC classification number: H01L23/60 ,  H01L21/76283 ,  H01L21/823481 ,  H01L24/04 ,  H01L27/0277 ,  H01L27/0623 ,  H01L27/0635 ,  H01L2924/01037 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

Abstract: An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.

Abstract translation: 隔离的外延调制装置包括基板; 形成在所述基板上的阻挡结构; 隔离的外延区，形成在衬底上并通过阻挡结构与衬底电隔离; 半导体器件，位于隔离的外延区域中的半导体器件; 以及形成在所述基板上并且电耦合到所述半导体器件的调制网络。 该装置还包括接合焊盘和接地焊盘。 隔离的外延区电耦合到接合焊盘和接地焊盘中的至少一个。 半导体器件和外延调制网络被配置为调制输入电压。