公开(公告)号：US4156963A

公开(公告)日：1979-06-05

申请号：US863445

申请日：1977-12-22

申请人： Isamu Tsuji ,  Nobuo Itazu ,  Katsuhiko Takigami

发明人： Isamu Tsuji ,  Nobuo Itazu ,  Katsuhiko Takigami

IPC分类号： H01L29/74 ,  H01L21/331 ,  H01L21/52 ,  H01L23/48 ,  H01L23/482 ,  H01L29/41 ,  H01L29/73 ,  H01L29/744 ,  B01J17/00

CPC分类号： H01L23/4824 ,  H01L24/72 ,  H01L29/744 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1301 ,  Y10T29/49169

摘要： A method for manufacturing a semiconductor device having a cathode layer divided into a plurality of mesa type cathode layer portions and used under pressure applied from the cathode layer side through a pressing plate, the method comprising steps of disposing a flat plate having a lateral width covering at least from the outer edge of a cathode electrode disposed on one outermost cathode layer portion to the outer edge of a cathode electrode disposed on the other outermost cathode layer portion, applying an external pressure through the flat plate, and then disposing the pressing plate.

摘要翻译： 一种半导体器件的制造方法，其具有分为多个台面型阴极层部分的阴极层，并且在通过压板从阴极层侧施加的压力下使用，该方法包括以下步骤：将具有横向宽度覆盖层 至少从设置在一个最外侧阴极层部分上的阴极电极的外边缘到设置在另一个最外侧阴极层部分上的阴极电极的外缘，通过平板板施加外部压力，然后设置压板。

公开(公告)号：US20050176091A1

公开(公告)日：2005-08-11

申请号：US10500688

申请日：2003-01-09

申请人： Takao Yamada ,  Isamu Tsuji ,  Yuko Misumi

发明人： Takao Yamada ,  Isamu Tsuji ,  Yuko Misumi

IPC分类号： C07K14/47 ,  C12N1/21 ,  C12N15/12 ,  C12P21/06 ,  C12N9/12

CPC分类号： C07K14/4703

摘要： A KiSS-1 Peptide or a salt thereof can be industrially mass-produced by subjecting a fused protein or peptide in which the KiSS-1 peptide is ligated to the N-terminal of a low-molecular peptide having cysteine at its N-terminal to the cleavage reaction of the peptide linkage on the amino group side of said cysteine residue.

摘要翻译： KiSS-1肽或其盐可以通过将其中连接有KiSS-1肽的融合蛋白或肽与其N-末端的半胱氨酸的低分子肽的N末端进行工业大规模生产 所述半胱氨酸残基的氨基侧上的肽键的切割反应。