High power diode type laser devices
    1.
    发明授权
    High power diode type laser devices 失效
    大功率二极管型激光器件

    公开(公告)号:US06272161B1

    公开(公告)日:2001-08-07

    申请号:US09248550

    申请日:1999-02-08

    IPC分类号: H01S516

    摘要: Diode type laser devices (diode layers) with nonabsorbing windows that are obtained in low confinement asymmetric structures, that consist of a waveguide and an active region, the action region being situated asymmetrically relative to the waveguide, at an extremity of the waveguide central layer, outside, at the margin or inside the waveguide central layer. The nonabsorbing mirrors can be obtained by the partial etching of the diode lasers layered structures, by this etching the active region being removed but in a large extent the layered structure remaining unaffected, and by the regrowth of a material with an adequate crystalline structure and nonabsorbing for the radiation emitted by the laser. By such a process the optical properties of the waveguide are reconstructed in a large extent, so that the radiation propagates to the mirror into a waveguide similar with the waveguide of the rest of the laser.

    摘要翻译: 具有非限制性不对称结构的非吸收窗口的二极管型激光器件(二极管层)由波导和有源区域组成,该作用区域在波导中心层的末端位于相对于波导的不对称位置, 外侧,边缘处或波导中心层内部。 非吸收镜可以通过二极管激光器分层结构的部分蚀刻来获得,通过这种蚀刻去除有源区域,但是在很大程度上保持不受影响的层状结构,以及具有足够的结晶结构和不吸收的材料的再生长 用于激光发射的辐射。 通过这样的处理,波导的光学特性在很大程度上重建,使得辐射传播到反射镜成为与激光的其余部分的波导类似的波导。