公开(公告)号：US06482555B2

公开(公告)日：2002-11-19

申请号：US09976336

申请日：2001-10-15

申请人： J. Fung Chen ,  Roger Caldwell ,  Tom Laidig ,  Kurt E. Wampler

发明人： J. Fung Chen ,  Roger Caldwell ,  Tom Laidig ,  Kurt E. Wampler

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/34 ,  G03F1/36

摘要： A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of “imaging elements.” The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form “halftone-like” imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.

摘要翻译： 一种制造掩模的方法，该掩模用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上。 该方法包括以下步骤：将现有的掩模图案组合成“成像元件”的阵列。 成像元件是pi相位偏移的，并被称为抗散射棒（ASB）的非相移和次分辨率元件分开。 实质上，ASB用于去除大于最小宽度的掩模特征以形成“半色调”成像图案。 ASB的放置和其宽度使得没有一个pi相移元件是可单独分辨的，但是它们一起形成基本上类似于预期掩模特征的图案。

公开(公告)号：US06312854B1

公开(公告)日：2001-11-06

申请号：US09270052

申请日：1999-03-16

申请人： J. Fung Chen ,  Roger Caldwell ,  Tom Laidig ,  Kurt E. Wampler

发明人： J. Fung Chen ,  Roger Caldwell ,  Tom Laidig ,  Kurt E. Wampler

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/34 ,  G03F1/36

摘要： A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of “imaging elements.” The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form “halftone-like” imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.

摘要翻译： 一种制造掩模的方法，该掩模用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上。 该方法包括以下步骤：将现有的掩模图案组合成“成像元件”的阵列。 成像元件是pi相位偏移的，并被称为抗散射棒（ASB）的非相移和次分辨率元件分开。 实质上，ASB用于去除大于最小宽度的掩模特征以形成“半色调”成像图案。 ASB的放置和其宽度使得没有一个pi相移元件是可单独分辨的，但是它们一起形成基本上类似于预期掩模特征的图案。

公开(公告)号：US6114071A

公开(公告)日：2000-09-05

申请号：US55355

申请日：1998-04-06

申请人： J. Fung Chen ,  Kurt E. Wampler ,  Tom Laidig

发明人： J. Fung Chen ,  Kurt E. Wampler ,  Tom Laidig

IPC分类号： G03F1/00 ,  G03F1/36 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/36

摘要： A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.

摘要翻译： 一种光刻掩模，用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上。 掩模包括对应于形成集成电路的元件的多个特征以及设置在至少一个特征的边缘上的多个不可分辨的偏置段。

公开(公告)号：US06835510B2

公开(公告)日：2004-12-28

申请号：US10662365

申请日：2003-09-16

申请人： Jang Fung Chen ,  Roger Caldwell ,  Thomas Laidig ,  Kurt E. Wampler

发明人： Jang Fung Chen ,  Roger Caldwell ,  Thomas Laidig ,  Kurt E. Wampler

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/30 ,  G03F1/34

摘要： A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).

摘要翻译： 一种形成用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上的混合掩模的方法。 该方法包括以下步骤：使用低透射相移掩模（图案）和非相移掩模（图案）之一在掩模上形成至少一个非关键特征，并且形成至少一个关键特征 该掩模利用高透射相移掩模（图案）。

公开(公告)号：US06623895B2

公开(公告)日：2003-09-23

申请号：US09840291

申请日：2001-04-24

申请人： Jang Fung Chen ,  Roger Caldwell ,  Thomas Laidig ,  Kurt E. Wampler

发明人： Jang Fung Chen ,  Roger Caldwell ,  Thomas Laidig ,  Kurt E. Wampler

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/30 ,  G03F1/34

摘要： A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).

公开(公告)号：US07998355B2

公开(公告)日：2011-08-16

申请号：US11822538

申请日：2007-07-06

申请人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： G03F1/32 ,  G03F1/34

摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.

摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

公开(公告)号：US20110143268A1

公开(公告)日：2011-06-16

申请号：US13032590

申请日：2011-02-22

申请人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

摘要翻译： 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要被成像的特征的目标图案，扩展要成像的特征的宽度，修改掩模以包括邻近放置的辅助特征 要成像的特征的边缘，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

公开(公告)号：US07666554B2

公开(公告)日：2010-02-23

申请号：US11588326

申请日：2006-10-27

申请人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US08039180B2

公开(公告)日：2011-10-18

申请号：US13032590

申请日：2011-02-22

申请人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F9/00

CPC分类号： G03F1/36

摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

公开(公告)号：US07820341B2

公开(公告)日：2010-10-26

申请号：US11655868

申请日：2007-01-22

申请人： Thomas Laidig ,  Jang Fung Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt E. Wampler

发明人： Thomas Laidig ,  Jang Fung Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt E. Wampler

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68

摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

摘要翻译： 一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。 该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。