公开(公告)号：US20120127442A1

公开(公告)日：2012-05-24

申请号：US12953511

申请日：2010-11-24

Applicant: JAMES A. BRUCE ,  Edward W. Conrad ,  Jacek G. Smolinski

Inventor： JAMES A. BRUCE ,  Edward W. Conrad ,  Jacek G. Smolinski

IPC: G03B27/42

CPC classification number: G03F1/36 ,  G03F7/705

Abstract: The subject matter disclosed herein relates to determining a lithographic set point using simulations of optical proximity correction verification. In one embodiment, a computer-implemented method of determining a lithographic tool set point for a lithographic process is disclosed. The method may include: providing a model of a production lithographic process including simulations of printed shapes; analyzing the model of the production lithographic process to determine whether a set of structures on a production mask used in the production lithographic process to create the printed shapes will fail under a plurality of set points; determining an operating region of set points where the set of structures on the production mask does not fail; and establishing a set point location within the operating region based upon a set point selection function.

Abstract translation: 本文公开的主题涉及使用光学邻近校正验证的模拟来确定光刻设置点。 在一个实施例中，公开了一种用于确定光刻工艺的光刻工具设定点的计算机实现的方法。 该方法可以包括：提供生产平版印刷工艺的模型，包括印刷形状的模拟; 分析生产光刻工艺的模型，以确定在生产光刻工艺中用于产生印刷形状的生产掩模上的一组结构是否将在多个设定点下失效; 确定生产掩模上的一组结构不失败的设定点的操作区域; 以及基于设定点选择功能在操作区域内建立设定点位置。

公开(公告)号：US20120192124A1

公开(公告)日：2012-07-26

申请号：US13014159

申请日：2011-01-26

Applicant: JAMES A. BRUCE ,  KENNETH T. SETTLEMYER, JR.

Inventor： JAMES A. BRUCE ,  KENNETH T. SETTLEMYER, JR.

IPC: G06F17/50

CPC classification number: G03F1/36 ,  G03F7/70441

Abstract: Solutions for accounting for photomask deviations in a lithographic process during optical proximity correction verification are disclosed. In one embodiment, a method includes: identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip in the case that the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, in the case that the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition in the case that the simulated wafer control structure does not comply with the target control structure.

Abstract translation: 公开了在光学邻近校正验证期间在光刻工艺中考虑光掩模偏差的解决方案。 在一个实施例中，一种方法包括：识别表示第一芯片或切口之一的数据集中的晶片控制结构; 在晶片控制结构处于表示第一芯片的数据集的情况下，偏置表示第一芯片的数据组; 在晶片控制结构处于表示切口或第二芯片的数据组的情况下，偏置表示切口的数据组或不同于第一芯片的第二芯片; 模拟晶圆控制结构的形成; 确定模拟晶片控制结构是否符合目标控制结构; 并且在模拟晶片控制结构不符合目标控制结构的情况下，迭代地调整曝光剂量条件。