公开(公告)号：US11227953B2

公开(公告)日：2022-01-18

申请号：US16767479

申请日：2018-11-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Kimihiko Kato ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Hitoshi Tabata ,  Hiroaki Matsui

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L29/775

Abstract: A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.