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公开(公告)号:US20020008201A1
公开(公告)日:2002-01-24
申请号:US09876853
申请日:2001-06-07
Applicant: JEOL Ltd.
Inventor: Yukihiro Tanaka , Sadao Matsumoto , Toru Ishimoto , Hirofumi Miyao
IPC: H01J037/28 , H01J037/244
CPC classification number: H01J37/28 , G01R31/2653 , G01R31/305 , H01J37/244 , H01J2237/24495 , H01J2237/24564
Abstract: A specimen inspection instrument has a specimen-moving mechanism mounted within a specimen chamber. An electrical current, induced across the specimen by the mechanism, is detected with a detector. The specimen is examined based on the obtained detector output signal. An amplifier for amplifying the detector output signal is placed outside the specimen chamber. A first lead wire passes the detector output signal to the outside amplifier through the wall of the specimen chamber. A second lead wire connects a conductive partition member with a conducting member and with a reference input terminal of the amplifier that determines a reference potential for the output from the amplifier.
Abstract translation: 样品检查仪器具有安装在样品室内的样品移动机构。 用检测器检测通过该机构在试样上感应的电流。 根据获得的检测器输出信号检查样本。 用于放大检测器输出信号的放大器放置在样品室外部。 第一引线将检测器输出信号通过样品室的壁传递到外部放大器。 第二导线将导电分隔构件与导电构件和放大器的参考输入端连接,该放大器的参考输入端确定放大器的输出的参考电位。
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公开(公告)号:US20010022345A1
公开(公告)日:2001-09-20
申请号:US09727358
申请日:2000-11-30
Applicant: JEOL Ltd.
Inventor: Toru Ishimoto
IPC: G21K007/00 , G01N023/00 , G21G005/00 , A61N005/00
CPC classification number: G01R31/307 , G01N23/00
Abstract: A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.
Abstract translation: 一种检查半导体器件中的接触孔或通孔的方法。 在整个样品表面上建立了多个小的测量区域Q。 测量区域Q依次用电子束照射。 此时,流过样品的吸收电流被电流放大器检测和放大。 控制单元将关于从小区域Q导出的吸收电流信号的数据存储在对应于小区域的位置的存储器的位置中。 控制单元从存储器读取关于吸收电流强度值的数据,并将强度值分类为四个强度范围,例如分配不同亮度强度的强度范围。
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