公开(公告)号：US20130275658A1

公开(公告)日：2013-10-17

申请号：US13767535

申请日：2013-02-14

申请人： JINMAN HAN ,  HO-CHUL LEE ,  MIN-SU KIM ,  SANGWAN NAM ,  JUNGHOON PARK

发明人： JINMAN HAN ,  HO-CHUL LEE ,  MIN-SU KIM ,  SANGWAN NAM ,  JUNGHOON PARK

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11582

摘要： A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.

摘要翻译： 提供一种用于编程闪存器件的方法，所述闪存器件包括沿垂直于衬底的方向形成的存储器单元，连接到第一存储器单元并由第一选择线选择的第一子字线以及连接到第二存储器的第二子字线 并且可由第二选择线选择，第一和第二存储器单元在同一电平上形成，同时被提供有编程电压。 该方法包括分别通过启用第一和第二选择线来对第一和第二子字线执行LSB编程操作; 通过分别启用第一和第二选择线来对第一和第二子字线执行CSB编程操作; 以及通过分别启用第一和第二选择线来对第一和第二子字线执行MSB编程操作。

公开(公告)号：US20130242675A1

公开(公告)日：2013-09-19

申请号：US13670731

申请日：2012-11-07

申请人： DONGHUN KWAK ,  SUNA KIM ,  CHEON AN LEE ,  HO-CHUL LEE

发明人： DONGHUN KWAK ,  SUNA KIM ,  CHEON AN LEE ,  HO-CHUL LEE

IPC分类号： G11C5/14

CPC分类号： G11C16/10 ,  G11C8/08 ,  G11C16/0483

摘要： A three-dimensional nonvolatile memory device comprises a plurality of cell strings arranged perpendicular to a substrate. The nonvolatile memory device is programmed by identifying a selected word line and a plurality of unselected word lines connected to at least one of the cell stings, and sequentially applying a negative voltage and a pass voltage to the selected and unselected word lines, and then applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.

摘要翻译： 三维非易失性存储器件包括垂直于衬底布置的多个单元串。 非易失性存储器件通过识别所选择的字线和连接到至少一个电池单元的多个未选择的字线来编程，并且对所选择的和未选择的字线顺序地施加负电压和通过电压，然后施加 在继续向未选择的字线施加通过电压的同时对所选字线的编程电压。