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公开(公告)号：US20140357072A1
公开(公告)日：2014-12-04
申请号：US13907845
申请日：2013-05-31
IPC分类号： H01L21/28
CPC分类号： H01L29/40117 , H01L29/42328 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A method of making a non-volatile memory (NVM) cell using a substrate having a top surface of silicon includes forming a select gate stack over the substrate. An oxide layer is grown on the top surface of the substrate. Nanocrystals of silicon are formed on the thermal oxide layer adjacent to a first side the select gate stack. The nanocrystals are partially oxidized to result in partially oxidized nanocrystals and further growing the thermal oxide layer. A control gate is formed over the partially oxidized nanocrystals. A first doped region is formed in the substrate adjacent to a first side of the control gate and a second doped region in the substrate adjacent to a second side of the select gate.
摘要翻译： 使用具有硅顶表面的衬底制造非易失性存储器（NVM）单元的方法包括在衬底上形成选择栅叠层。 在衬底的顶表面上生长氧化物层。 硅的纳米晶体形成在与选择栅极堆叠的第一侧相邻的热氧化物层上。 纳米晶体被部分氧化，导致部分氧化的纳米晶体，并进一步生长热氧化物层。 在部分氧化的纳米晶体上形成控制栅极。 第一掺杂区域形成在邻近控制栅极的第一侧的衬底中的衬底中，并且衬底中的第二掺杂区域与选择栅极的第二侧相邻。
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公开(公告)号：US20130323922A1
公开(公告)日：2013-12-05
申请号：US13961574
申请日：2013-08-07
申请人： JINMIAO J. SHEN , Ko-Min Chang , Brian A. Winstead
发明人： JINMIAO J. SHEN , Ko-Min Chang , Brian A. Winstead
IPC分类号： H01L29/423
CPC分类号： H01L29/42344 , H01L21/28273 , H01L21/28282 , H01L29/42328 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： A method for forming a split gate device includes forming a first sidewall of a first conductive gate layer, wherein the semiconductor layer includes a tunnel region laterally adjacent the first sidewall, forming a dielectric layer along the first sidewall to provide for increased thickness of a gap spacer, forming a charge storage layer over a portion of a top surface of the first conductive layer and over the tunnel region, and forming a second conductive gate layer over the charge storage layer.
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