公开(公告)号：US20200227511A1

公开(公告)日：2020-07-16

申请号：US16830289

申请日：2020-03-26

Applicant: JOLED INC.

Inventor： Atsuhito MURAI ,  Yasuhiro TERAI ,  Takashi MARUYAMA ,  Yoshihiro OSHIMA ,  Motohiro TOYOTA ,  Ryosuke EBIHARA ,  Yasunobu HIROMASU

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US20190081125A1

公开(公告)日：2019-03-14

申请号：US16112770

申请日：2018-08-27

Applicant: JOLED INC.

Inventor： Atsuhito MURAI ,  Yasuhiro TERAI ,  Takashi MARUYAMA ,  Yoshihiro OSHIMA ,  Motohiro TOYOTA ,  Ryosuke EBIHARA ,  Yasunobu HIROMASU

IPC: H01L27/32 ,  H01L51/52

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US20200266300A1

公开(公告)日：2020-08-20

申请号：US16518437

申请日：2019-07-22

Applicant: JOLED INC.

Inventor： Yasuhiro TERAI ,  Naoki ASANO ,  Takashi MARUYAMA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.