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公开(公告)号：US20220085139A1
公开(公告)日：2022-03-17
申请号：US17534474
申请日：2021-11-24
Applicant: JOLED INC.
Inventor： Yasuhiro TERAI , Yasuharu SHINOKAWA , Jiro YAMADA , Atsuhito MURAI , Masahiko KONDO , Noriteru MAEDA
Abstract: A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.
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公开(公告)号：US20170271423A1
公开(公告)日：2017-09-21
申请号：US15459257
申请日：2017-03-15
Applicant: JOLED Inc. , Japan Display Inc.
Inventor： Atsuhito MURAI , Eiichi SATO , Masanori MIURA
CPC classification number: H01L27/3262 , H01L27/3276 , H01L27/3297 , H01L51/5253 , H01L2227/323
Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.
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公开(公告)号：US20220005918A1
公开(公告)日：2022-01-06
申请号：US17480145
申请日：2021-09-21
Applicant: JOLED Inc.
Inventor： Atsuhito MURAI , Eiichi SATO , Masanori MIURA
Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.
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公开(公告)号：US20190081083A1
公开(公告)日：2019-03-14
申请号：US16186590
申请日：2018-11-12
Applicant: JOLED Inc.
Inventor： Atsuhito MURAI , Eiichi SATO , Masanori MIURA
IPC: H01L27/12 , H01L51/52 , H01L29/786 , H01L27/32 , H01L29/417 , G02F1/1368
CPC classification number: H01L27/1225 , G02F1/1368 , H01L27/124 , H01L27/1248 , H01L27/1251 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/786 , H01L29/78666 , H01L29/78675 , H01L29/7869 , H01L51/5253 , H01L51/5256
Abstract: According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.
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公开(公告)号：US20190318688A1
公开(公告)日：2019-10-17
申请号：US16245182
申请日：2019-01-10
Applicant: JOLED INC.
Inventor： Masahiko KONDO , Jiro YAMADA , Atsuhito MURAI , Yasuhiro TERAI , Noriteru MAEDA
IPC: G09G3/3225 , H01L27/32 , G02F1/01 , F21V8/00
Abstract: A display unit includes a display panel, a photochromic layer, and an ultraviolet absorption layer. The photochromic layer is configured to be colored by ultraviolet light and be decolored or color-faded by visible light. The display panel includes an image display surface with a plurality of pixels. The pixels are provided below the image display surface and each include an organic light-emitting layer.
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Patent Agency Ranking
公开(公告)号：US20190006617A1
公开(公告)日：2019-01-03
申请号：US16018077
申请日：2018-06-26
Applicant: JOLED INC.
Inventor： Masanori MIURA , Atsuhito MURAI
IPC: H01L51/52 , H01L51/50 , H01L51/56 , H01L27/32 , G09G3/3266 , G09G3/3233 , G09G3/3258
Abstract: A display device includes a display region, an organic insulating layer, a display element, and a moisture-ingress barrier. The organic insulating layer has a groove outside the display region. The organic insulating layer extends over the display region and a region outside the groove. The display element is disposed in the display region and includes, in order, a first electrode, an organic layer, and a second electrode. The organic layer includes one or more moisture-reacting layers. The moisture-ingress barrier is disposed in the groove of the organic insulating layer, includes a material identical to the material of the one or more moisture-reacting layers, and has a thickness greater than the thickness of the one or more moisture-reacting layers.
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公开(公告)号：US20200027900A1
公开(公告)日：2020-01-23
申请号：US16434425
申请日：2019-06-07
Applicant: JOLED INC.
Inventor： Ryosuke EBIHARA , Yasuhiro TERAI , Atsuhito MURAI
Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.
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公开(公告)号：US20190206964A1
公开(公告)日：2019-07-04
申请号：US16296217
申请日：2019-03-08
Applicant: JOLED Inc.
Inventor： Atsuhito MURAI , Eiichi SATO , Masanori MIURA
CPC classification number: H01L27/3262 , H01L27/3276 , H01L27/3297 , H01L51/5253 , H01L2227/323
Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.
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公开(公告)号：US20180158848A1
公开(公告)日：2018-06-07
申请号：US15830503
申请日：2017-12-04
Applicant: JOLED INC.
Inventor： Atsuhito MURAI
IPC: H01L27/12 , H01L29/786 , H01L29/423 , H01L29/417
Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over the second semiconductor layer, the second gate electrode facing the second semiconductor layer.
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公开(公告)号：US20170271376A1
公开(公告)日：2017-09-21
申请号：US15459634
申请日：2017-03-15
Applicant: JOLED Inc. , Japan Display Inc.
Inventor： Atsuhito MURAI , Eiichi SATO , Masanori MIURA
IPC: H01L27/12 , G02F1/1368 , H01L27/32
CPC classification number: H01L27/1225 , G02F1/1368 , H01L27/124 , H01L27/1248 , H01L27/1251 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/786 , H01L29/78666 , H01L29/78675 , H01L29/7869 , H01L51/5253 , H01L51/5256
Abstract: According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.
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