公开(公告)号：US20190305064A1

公开(公告)日：2019-10-03

申请号：US16273156

申请日：2019-02-12

Applicant: JOLED INC.

Inventor： Tokuaki KUNIYOSHI ,  Naoki ASANO ,  Ryo KOSHIISHI ,  Hiroshi FUJIMURA

IPC: H01L27/32 ,  H01L29/786

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

公开(公告)号：US20200266300A1

公开(公告)日：2020-08-20

申请号：US16518437

申请日：2019-07-22

Applicant: JOLED INC.

Inventor： Yasuhiro TERAI ,  Naoki ASANO ,  Takashi MARUYAMA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

公开(公告)号：US20180197884A1

公开(公告)日：2018-07-12

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Tokuaki KUNIYOSHI ,  Yasuhiro TERAI ,  Eri MATSUO ,  Toshiaki YOSHITANI ,  Naoki ASANO

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L27/124 ,  H01L21/0273 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.

公开(公告)号：US20190259878A1

公开(公告)日：2019-08-22

申请号：US16150278

申请日：2018-10-03

Applicant: JOLED INC.

Inventor： Naoki ASANO ,  Tokuaki KUNIYOSHI

IPC: H01L29/786 ,  G09G3/20 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first gate insulating film, a second gate insulating film, and a gate electrode. The semiconductor layer is provided in a selective region of the substrate. The first gate insulating film is provided in the selective region of the substrate and covers a surface of the semiconductor layer. The second gate insulating film extends across opposite sides of the first gate insulating film along a channel width direction and covers the first gate insulating film that covers the semiconductor layer. The gate electrode faces the semiconductor layer across the second gate insulating film.

公开(公告)号：US20200321469A1

公开(公告)日：2020-10-08

申请号：US16736813

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Hiroshi HAYASHI ,  Naoki ASANO ,  Ryo KOSHIISHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.