公开(公告)号：US20170125604A1

公开(公告)日：2017-05-04

申请号：US15404783

申请日：2017-01-12

Applicant: JOLED INC.

Inventor： Yoshihiro OSHIMA

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78621 ,  G02F1/1368 ,  G02F2001/13606 ,  G09F9/30 ,  H01L21/28 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor includes a gate electrode, an oxide semiconductor film, and a gate insulating film. The oxide semiconductor film includes a channel region and a low-resistance region. The channel region faces the gate electrode. The low-resistance region has a resistance value lower than a resistance value of the channel region. The gate insulating film is provided between the oxide semiconductor film and the gate electrode, and has a first surface located closer to the oxide semiconductor film and a second surface located closer to the gate electrode. The first surface of the gate insulating film has a length in a channel length direction which is greater than a maximum length of the gate electrode in the channel length direction.

公开(公告)号：US20200227511A1

公开(公告)日：2020-07-16

申请号：US16830289

申请日：2020-03-26

Applicant: JOLED INC.

Inventor： Atsuhito MURAI ,  Yasuhiro TERAI ,  Takashi MARUYAMA ,  Yoshihiro OSHIMA ,  Motohiro TOYOTA ,  Ryosuke EBIHARA ,  Yasunobu HIROMASU

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US20190081125A1

公开(公告)日：2019-03-14

申请号：US16112770

申请日：2018-08-27

Applicant: JOLED INC.

Inventor： Atsuhito MURAI ,  Yasuhiro TERAI ,  Takashi MARUYAMA ,  Yoshihiro OSHIMA ,  Motohiro TOYOTA ,  Ryosuke EBIHARA ,  Yasunobu HIROMASU

IPC: H01L27/32 ,  H01L51/52

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US20190333758A1

公开(公告)日：2019-10-31

申请号：US16190127

申请日：2018-11-13

Applicant: JOLED INC.

Inventor： Motohiro TOYOTA ,  Yoshihiro OSHIMA

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/441 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/786 ,  B08B3/08

Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.

公开(公告)号：US20190115476A1

公开(公告)日：2019-04-18

申请号：US16213715

申请日：2018-12-07

Applicant: JOLED INC.

Inventor： Yoshihiro OSHIMA

IPC: H01L29/786 ,  H01L27/12 ,  G09F9/30 ,  H01L29/66 ,  H01L29/423 ,  G02F1/1368 ,  H01L21/28

Abstract: A transistor includes a gate electrode, an oxide semiconductor film, and a gate insulating film. The oxide semiconductor film includes a channel region and a low-resistance region. The channel region faces the gate electrode. The low-resistance region has a resistance value lower than a resistance value of the channel region. The gate insulating film is provided between the oxide semiconductor film and the gate electrode, and has a first surface located closer to the oxide semiconductor film and a second surface located closer to the gate electrode. The first surface of the gate insulating film has a length in a channel length direction which is greater than a maximum length of the gate electrode in the channel length direction.