公开(公告)号：US10050150B2

公开(公告)日：2018-08-14

申请号：US14956894

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Emi Kobayashi ,  Arinobu Kanegae ,  Yusuke Fukui

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45

Abstract: A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

公开(公告)号：US09893193B2

公开(公告)日：2018-02-13

申请号：US14956780

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Arinobu Kanegae ,  Emi Kobayashi ,  Yusuke Fukui

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78618 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.