公开(公告)号：US10050150B2

公开(公告)日：2018-08-14

申请号：US14956894

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Emi Kobayashi ,  Arinobu Kanegae ,  Yusuke Fukui

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45

Abstract: A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

公开(公告)号：US10008611B2

公开(公告)日：2018-06-26

申请号：US15321975

申请日：2015-06-24

Applicant: JOLED INC.

Inventor： Mitsutaka Matsumoto ,  Arinobu Kanegae

IPC: H01L29/08 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/383 ,  H01L21/385 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/383 ,  H01L21/385 ,  H01L21/471 ,  H01L21/473 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/50

Abstract: A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

公开(公告)号：US09893193B2

公开(公告)日：2018-02-13

申请号：US14956780

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Arinobu Kanegae ,  Emi Kobayashi ,  Yusuke Fukui

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78618 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

公开(公告)号：US09209309B2

公开(公告)日：2015-12-08

申请号：US14003946

申请日：2012-12-28

Applicant: JOLED INC.

Inventor： Arinobu Kanegae ,  Kenichirou Nishida

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78678 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/78618 ,  H01L29/78696

Abstract: A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode.

Abstract translation: 薄膜半导体器件），其具有两个薄膜晶体管，其中所述薄膜晶体管中的一个包括：第一栅电极; 第一栅极绝缘膜; 第一半导体膜; 本征半导体层; 与本征半导体层的一部分接触和上方的n型第一接触层; 第一源电极; 和第一漏电极，另一个薄膜晶体管包括：第二栅电极; 第二栅绝缘膜; 第二半导体膜; 本征半导体层; 与半导体膜和本征半导体层的侧面的部分接触的p型第二接触层; 第二源电极; 和第二漏电极。