公开(公告)号：US20180206941A1

公开(公告)日：2018-07-26

申请号：US15744777

申请日：2015-11-18

Applicant: JONG HO LEE

Inventor： JONG HO LEE

IPC: A61C7/02 ,  A61C7/20 ,  A61C7/00

CPC classification number: A61C7/02 ,  A61C7/002 ,  A61C7/12 ,  A61C7/20

Abstract: A customized orthodontic archwire fabrication kit and a method of fabricating an orthodontic archwire using the same are disclosed. The orthodontic archwire fabrication kit according to the present disclosure comprises: a jig base formed by perforating the pairs of inner fastening holes and outer fastening holes corresponding to the positions of teeth on a dental setup model of a patient; a jig comprising at one end a first head through which a first through hole is penetrated, at the other end a second head through which a second through hole is penetrated, and a body connecting the first head and the second head and having a wire ligation slot recessed on a portion of the top of the body; a fixing screw corresponding to the dimensions of the first through hole and inner fastening hole; and a fixture corresponding to the dimensions of the second through hole and outer fastening hole. By applying heat in a furnace after the nitinol wire is ligated to and fixed in the jig's wire ligation slot, a custom orthodontic archwire will be created.

公开(公告)号：US20130234287A1

公开(公告)日：2013-09-12

申请号：US13463334

申请日：2012-05-03

Applicant: Badih EL-KAREH ,  JONG HO LEE ,  DONGSEOK KIM ,  CHANG EUN LEE ,  Jung-Joo KIM

Inventor： Badih EL-KAREH ,  JONG HO LEE ,  DONGSEOK KIM ,  CHANG EUN LEE ,  Jung-Joo KIM

IPC: H01L29/86 ,  H01L21/02

CPC classification number: H01L27/0629 ,  H01L28/60

Abstract: A high-precision capacitor includes a first degenerately doped polysilicon plate, a second degenerately doped polysilicon plate, and a dielectric material disposed between the first and the second degenerately doped polysilicon plates. The first degenerately doped polysilicon plate may be formed by performing POCL (phosphorus oxychloride) diffusion, and performing ion implantation through the POCL oxide to replenish the loss of dopants. The second degenerately doped polysilicon plate may be formed by performing POCL doping. The high-precision capacitor may exhibit a voltage coefficient of capacitance (VCC) comparable to a Metal-Insulator-Metal capacitor, however, with a dielectric of higher quality.

Abstract translation: 高精度电容器包括第一简并掺杂多晶硅板，第二简并掺杂多晶硅板和设置在第一和第二简并掺杂多晶硅板之间的电介质材料。 可以通过进行POCL（三氯氧化磷）扩散，并通过POCL氧化物进行离子注入以补充掺杂剂的损失来形成第一个简并掺杂的多晶硅板。 可以通过执行POCL掺杂来形成第二简并掺杂多晶硅板。 高精度电容器可以表现出与金属 - 绝缘体 - 金属电容器相当的电容（VCC）电压系数，然而，具有更高质量的电介质。

公开(公告)号：US20180243052A1

公开(公告)日：2018-08-30

申请号：US15755083

申请日：2015-11-18

Applicant: JONG HO LEE

Inventor： JONG HO LEE

IPC: A61C7/00 ,  A61C7/20 ,  B23H7/02 ,  B23H7/26

CPC classification number: A61C7/002 ,  A61C7/12 ,  A61C7/14 ,  A61C7/20 ,  B23H7/02 ,  B23H7/26 ,  B23H2200/00

Abstract: A method for manufacturing a customized orthodontic square wire is disclosed. The present invention comprises: a step of generating a setup model in which teeth of a patient are rearranged to a normal position; a step of determining the position of a bracket on the setup model; a step of generating a reference line connecting slots of the determined bracket; a step of generating data for a cutting and grinding operation having a rectangular cross section by using the generated reference line; and a step of manufacturing a square wire by cutting a material using the data for the cutting operation of the generated reference line.