摘要:
A NAND flash memory device comprises a NAND flash memory comprising a first pad and a plurality of second pads. The first pad comprises a first receiver configured to receive a first signal. The second pads comprise a plurality of respective second receivers configured to receive a plurality of respective second signals. The second receivers are selectively powered, i.e., turned on or off, according to a logic level of the first signal.
摘要:
A voltage scaling device of a semiconductor memory device, the voltage scaling device including: a delay tester for determining the number of delay cells of a delay locked loop (DLL) required to cumulatively delay a clock signal having a constant frequency, and which is input to the DLL, by one clock period; a temperature sensor for measuring the temperature of the semiconductor memory device; and a voltage regulator for regulating a supply voltage of a voltage source which provides a chip voltage to the semiconductor memory device in response to the temperature measured by the temperature sensor and a locking value corresponding to the number of delay cells calculated by the delay tester.