VOLTAGE SCALING DEVICE OF SEMICONDUCTOR MEMORY
    2.
    发明申请
    VOLTAGE SCALING DEVICE OF SEMICONDUCTOR MEMORY 审中-公开
    半导体存储器的电压调节装置

    公开(公告)号:US20130094312A1

    公开(公告)日:2013-04-18

    申请号:US13584849

    申请日:2012-08-14

    IPC分类号: G11C7/00 H01L35/00

    摘要: A voltage scaling device of a semiconductor memory device, the voltage scaling device including: a delay tester for determining the number of delay cells of a delay locked loop (DLL) required to cumulatively delay a clock signal having a constant frequency, and which is input to the DLL, by one clock period; a temperature sensor for measuring the temperature of the semiconductor memory device; and a voltage regulator for regulating a supply voltage of a voltage source which provides a chip voltage to the semiconductor memory device in response to the temperature measured by the temperature sensor and a locking value corresponding to the number of delay cells calculated by the delay tester.

    摘要翻译: 一种半导体存储器件的电压调节装置,所述电压缩放装置包括:延迟测试器,用于确定累积地延迟具有恒定频率的时钟信号所需的延迟锁定环(DLL)的延迟单元数量,并且其被输入 到DLL,一个时钟周期; 温度传感器,用于测量半导体存储器件的温度; 以及电压调节器,用于响应于由温度传感器测量的温度和对应于由延迟测试器计算的延迟单元的数量的锁定值,调节向半导体存储器件提供芯片电压的电压源的电源电压。