Pattern-forming method and composition for resist pattern-refinement

    公开(公告)号:US10216090B2

    公开(公告)日:2019-02-26

    申请号:US15082389

    申请日:2016-03-28

    Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.

Patent Agency Ranking