公开(公告)号：US20110199346A1

公开(公告)日：2011-08-18

申请号：US13025754

申请日：2011-02-11

申请人： Jae Hyok Ko ,  Han Gu Kim ,  Chang Su Kim ,  Suk-Jin Kim ,  Kwan Young Kim

发明人： Jae Hyok Ko ,  Han Gu Kim ,  Chang Su Kim ,  Suk-Jin Kim ,  Kwan Young Kim

IPC分类号： G06F3/038 ,  H01L27/082 ,  H01L21/8222

CPC分类号： H01L21/761 ,  H01L27/0251

摘要： A semiconductor device includes a semiconductor substrate having a first conductivity type, at least two first well regions which have a second conductivity type and a predetermined depth in the semiconductor substrate, at least one second well region which has the first conductivity type and a predetermined depth in each of the first well regions, and a guard-ring region which has the second conductivity type and a predetermined depth and is positioned between the first well regions to be separated by a predetermined distance from the first well regions. The guard-ring region is connected to a ground voltage.

摘要翻译： 半导体器件包括具有第一导电类型的半导体衬底，在半导体衬底中具有第二导电类型和预定深度的至少两个第一阱区，具有第一导电类型和预定深度的至少一个第二阱区 以及具有第二导电类型和预定深度并且位于第一阱区之间以与第一阱区隔开预定距离的保护环区域。 保护环区域连接到接地电压。