Diamine compound having dendron side chain and liquid crystal aligning agent using same
    2.
    发明授权
    Diamine compound having dendron side chain and liquid crystal aligning agent using same 有权
    具有枝晶侧链的二胺化合物和使用其的液晶取向剂

    公开(公告)号:US07790836B2

    公开(公告)日:2010-09-07

    申请号:US12592315

    申请日:2009-11-23

    IPC分类号: C08G69/08

    CPC分类号: C08G73/10

    摘要: Disclosed herein is a novel functional diamine compound having a dendron structure, polyamic acid which is produced using functional diamine, aromatic cyclic diamine, aliphatic cyclic acid dianhydride, and aromatic cyclic acid dianhydride, polyimide which is produced by imidizing polyamic acid, and an LC alignment film produced using polyimide. Even if the diamine compound is used in a small amount, it is possible to realize a high pretilt angle, thus the pretilt angle is easily controlled. Therefore, it can be used to produce an LC alignment film using a twisted nematic (TN) mode, in which the pretilt angle of liquid crystal is low, and a vertically aligned (VA) mode, which requires a high pretilt angle of about 90°.

    摘要翻译: 本文公开了具有树突状结构的新型官能二胺化合物,使用官能二胺,芳族环二胺,脂族环酸二酐和芳族环酸二酐制备的聚酰胺酸,通过酰亚胺化聚酰胺酸制备的聚酰亚胺和LC对准 使用聚酰亚胺生产的薄膜。 即使少量使用二胺化合物,也可以实现高预倾角,因此容易控制预倾角。 因此,可以使用液晶的预倾角为低的扭曲向列(TN)模式和垂直取向(VA)模式来制造LC取向膜,其需要大约90°的预倾角 °。

    Composition for LC alignment film using diamine having dendron side chain
    3.
    发明授权
    Composition for LC alignment film using diamine having dendron side chain 有权
    使用具有枝形侧链的二胺的LC取向膜的组成

    公开(公告)号:US07408020B2

    公开(公告)日:2008-08-05

    申请号:US11219046

    申请日:2005-09-01

    摘要: Disclosed herein is an LC aligning agent using diamine having dendron side chains. In detail, the present invention relates to a composition for an LC alignment film which employs diamine having dendron side chains to produce polyamic acid, followed by imidization. When the LC alignment film is applied to a liquid crystal display device, high heat resistance, high penetration in a visible ray range, excellent alignment, and a high voltage holding ratio are assured. Even though it contains a small amount of functional diamine, a high pretilt angle can be assured. Thus, the pretilt angle is easily controlled and a vertical aligning force is improved.

    摘要翻译: 本文公开了使用具有枝形侧链的二胺的LC取向剂。 详细地说,本发明涉及一种LC取向膜用组合物,其采用具有枝状侧链的二胺制造聚酰胺酸,接着进行酰亚胺化。 当将LC取向膜应用于液晶显示装置时,可确保高耐热性,可见光范围的高穿透性,优异的取向和高电压保持率。 尽管它含有少量的官能二胺,但可以确保高的预倾角。 因此,容易控制预倾角,提高垂直取向力。

    Diamine compound having dendron side chain and liquid crystal alignment material produced using the same
    6.
    发明授权
    Diamine compound having dendron side chain and liquid crystal alignment material produced using the same 有权
    具有树枝状侧链的二胺化合物和使用其制备的液晶取向材料

    公开(公告)号:US07307139B2

    公开(公告)日:2007-12-11

    申请号:US10536854

    申请日:2004-10-08

    IPC分类号: C08G69/08

    摘要: Disclosed herein are a novel diamine compound having a dendron side chain and a liquid crystal alignment material produced using the diamine compound. Specifically, the diamine compound is used to prepare a polyamic acid, which is then used to produce the liquid crystal alignment material. According to the liquid crystal alignment material, the pretilt angle of a liquid crystal is easy to control, and the alignment properties of a liquid crystal are good. Particularly, since the liquid crystal alignment material shows superior chemical resistance to washing solvents used in LCD panel fabrication processes, it has an advantage in that the alignment properties of a liquid crystal are not degraded even after washing.

    摘要翻译: 本文公开了具有树枝状侧链和使用二胺化合物制备的液晶取向材料的新型二胺化合物。 具体地,使用二胺化合物制备聚酰胺酸,然后将其用于制备液晶取向材料。 根据液晶取向材料,液晶的预倾角容易控制,液晶的取向性良好。 特别地,由于液晶取向材料对于LCD面板制造工艺中使用的洗涤溶剂表现出优异的耐化学性,所以具有液晶的取向性能甚至在洗涤后也不降解的优点。

    PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    相变随机访问存储器件及其制造方法

    公开(公告)号:US20120326114A1

    公开(公告)日:2012-12-27

    申请号:US13326490

    申请日:2011-12-15

    IPC分类号: H01L45/00 H01L21/20

    摘要: A phase-change random access memory device includes a semiconductor substrate, an interlayer dielectric layer formed over the semiconductor substrate and having contact holes defined therein, metal contacts formed in the contact holes, an ohmic contact layer formed over the metal contacts and having recesses defined therein, and switching elements formed over the recesses of the ohmic contact layer.

    摘要翻译: 相变随机存取存储器件包括半导体衬底,形成在半导体衬底上并具有限定在其中的接触孔的层间绝缘层,形成在接触孔中的金属触点,形成在金属触点上并具有凹陷的欧姆接触层 以及形成在欧姆接触层的凹部上方的开关元件。

    Phase-change random access memory device and method of manufacturing the same
    9.
    发明授权
    Phase-change random access memory device and method of manufacturing the same 有权
    相变随机存取存储器件及其制造方法

    公开(公告)号:US08592796B2

    公开(公告)日:2013-11-26

    申请号:US13326490

    申请日:2011-12-15

    IPC分类号: H01L47/00

    摘要: A phase-change random access memory device includes a semiconductor substrate, an interlayer dielectric layer formed over the semiconductor substrate and having contact holes defined therein, metal contacts formed in the contact holes, an ohmic contact layer formed over the metal contacts and having recesses defined therein, and switching elements formed over the recesses of the ohmic contact layer.

    摘要翻译: 相变随机存取存储器件包括半导体衬底,形成在半导体衬底上并具有限定在其中的接触孔的层间绝缘层,形成在接触孔中的金属触点,形成在金属触点上并具有凹陷的欧姆接触层 以及形成在欧姆接触层的凹部上方的开关元件。

    CAPACITOR OF A MEMORY DEVICE AND METHOD FOR FORMING THE SAME
    10.
    发明申请
    CAPACITOR OF A MEMORY DEVICE AND METHOD FOR FORMING THE SAME 审中-公开
    存储器件的电容器及其形成方法

    公开(公告)号:US20080003768A1

    公开(公告)日:2008-01-03

    申请号:US11618628

    申请日:2006-12-29

    申请人: Jae Min Oh

    发明人: Jae Min Oh

    IPC分类号: H01L21/20

    摘要: A capacitor of a memory device is formed on a semiconductor substrate having transistors thereon. A mold layer having holes defined therein is formed on the semiconductor substrate. A catalytic metal layer is formed proximate to a bottom boundary of each hole. Reaction gas is fed to the catalytic metal layer to form carbon nanotubes via a catalytic reaction of the reaction gas by the catalytic metal layer. After forming a lower electrode layer proximate to the bottom boundary and sidewall of each hole and over the carbon nanotubes, a dielectric layer is deposited over the lower electrode layer. Upper electrodes are formed on the dielectric layer to form capacitors electrically connected to the transistors.

    摘要翻译: 存储器件的电容器形成在其上具有晶体管的半导体衬底上。 在半导体衬底上形成具有限定在其中的孔的模具层。 在每个孔的底部边界附近形成催化金属层。 通过催化金属层的反应气体的催化反应将反应气体送入催化金属层,形成碳纳米管。 在靠近每个孔的底部边界和侧壁并在碳纳米管之上形成下部电极层之后,在下部电极层上沉积电介质层。 上电极形成在电介质层上以形成电连接到晶体管的电容器。