公开(公告)号：US20070187690A1

公开(公告)日：2007-08-16

申请号：US11691455

申请日：2007-03-26

申请人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

发明人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

摘要翻译： 薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线。 由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

公开(公告)号：US07211898B2

公开(公告)日：2007-05-01

申请号：US10539223

申请日：2003-03-26

申请人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

发明人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

IPC分类号： H01L23/48

CPC分类号： H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

摘要翻译： 薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线方法。 由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

公开(公告)号：US20110024759A1

公开(公告)日：2011-02-03

申请号：US12901324

申请日：2010-10-08

申请人： Jae-Gab LEE ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

发明人： Jae-Gab LEE ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

IPC分类号： H01L29/786 ,  H01L21/768

CPC分类号： H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

摘要翻译： 薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线。 由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

公开(公告)号：US20060163582A1

公开(公告)日：2006-07-27

申请号：US10539223

申请日：2003-03-26

申请人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

发明人： Jae-Gab Lee ,  Chang-Oh Jeong ,  Myung-Mo Sung ,  Hee-Jung Yang ,  Beom-Seok Cho

IPC分类号： H01L29/76

CPC分类号： H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

摘要翻译： 薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线方法。 由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。