公开(公告)号：US20120097965A1

公开(公告)日：2012-04-26

申请号：US13072625

申请日：2011-03-25

申请人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

发明人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

IPC分类号： H01L29/786

CPC分类号： H01L29/78621 ,  H01L27/1285 ,  H01L29/78696

摘要： In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的显示装置中，根据示例性实施例的薄膜晶体管包括：半导体层，包括沟道区，源极区，漏极区，光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分，源极沟道部分和漏极沟道部分，并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间，并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。

公开(公告)号：US09171956B2

公开(公告)日：2015-10-27

申请号：US13072625

申请日：2011-03-25

申请人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

发明人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78621 ,  H01L27/1285 ,  H01L29/78696

摘要： In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的显示装置中，根据示例性实施例的薄膜晶体管包括：半导体层，包括沟道区，源极区，漏极区，光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分，源极沟道部分和漏极沟道部分，并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间，并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。

公开(公告)号：US20110134381A1

公开(公告)日：2011-06-09

申请号：US12957233

申请日：2010-11-30

申请人： Kyung-Min Park ,  Ji-Yong Park ,  Jin-Suk Park ,  Sung-In Ro

发明人： Kyung-Min Park ,  Ji-Yong Park ,  Jin-Suk Park ,  Sung-In Ro

IPC分类号： G02F1/1343 ,  H01L33/08

CPC分类号： H01L27/3265 ,  G02F1/136213 ,  G02F2201/40 ,  H01L27/1255 ,  H01L51/56

摘要： A display device and a method of manufacturing the same are disclosed. In one embodiment, the display device includes: i) a first insulating layer formed on a first substrate, ii) a lower electrode formed on the first insulating layer, iii) a dielectric layer formed to surround the top and side of the lower electrode, wherein the dielectric layer does not cover a pixel region of the display device and iv) an upper electrode formed on the dielectric layer.

摘要翻译： 公开了一种显示装置及其制造方法。 在一个实施例中，显示装置包括：i）形成在第一基板上的第一绝缘层，ii）形成在第一绝缘层上的下电极，iii）形成为围绕下电极的顶部和侧面的介电层， 其中所述电介质层不覆盖所述显示装置的像素区域，以及iv）形成在所述电介质层上的上电极。

公开(公告)号：US08964141B2

公开(公告)日：2015-02-24

申请号：US12966788

申请日：2010-12-13

申请人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Jin-Suk Park ,  Seong-Yeun Kang

发明人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Jin-Suk Park ,  Seong-Yeun Kang

IPC分类号： G02F1/136 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78645

摘要： A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.

摘要翻译： 公开了一种薄膜晶体管及其制造方法及具有该薄膜晶体管的显示装置。 薄膜晶体管包括形成在基板上的半导体层，形成在包括半导体层的基板上的栅极绝缘层，形成在半导体层上方的绝缘栅上的栅电极，连接到半导体层的源电极和漏电极，以及 形成在与栅电极重叠的半导体层上的3.5〜4.5个突起。 可以通过调节突起的数量来防止薄膜晶体管的故障和显示装置的劣化的图像质量，以使漏电流和缺陷最小化。

公开(公告)号：US08610124B2

公开(公告)日：2013-12-17

申请号：US13079979

申请日：2011-04-05

申请人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Seong-Yeun Kang ,  Jin-Suk Park

发明人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Seong-Yeun Kang ,  Jin-Suk Park

IPC分类号： H01L29/04

CPC分类号： H01L29/78633 ,  G02F1/136209 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1281 ,  H01L27/3272 ,  H01L2227/323

摘要： A display device capable of implementing the light shielding effect and process simplification, and a method of manufacturing the display device. The display device includes a transistor formed in a first region on a substrate, a pixel electrode formed in a second region on the substrate, a buffer layer formed beneath the transistor in the first region, and a light shielding layer formed between the buffer layer and the substrate in the first region. In the display device, the light shielding layer may include a semiconductor material.

摘要翻译： 能够实现遮光效果和处理简化的显示装置，以及制造该显示装置的方法。 显示装置包括形成在基板上的第一区域中的晶体管，形成在基板上的第二区域中的像素电极，形成在第一区域中的晶体管下方的缓冲层，以及形成在缓冲层和 第一区域中的衬底。 在显示装置中，遮光层可以包括半导体材料。

公开(公告)号：US08390751B2

公开(公告)日：2013-03-05

申请号：US12957233

申请日：2010-11-30

申请人： Kyung-Min Park ,  Ji-Yong Park ,  Jin-Suk Park ,  Sung-In Ro

发明人： Kyung-Min Park ,  Ji-Yong Park ,  Jin-Suk Park ,  Sung-In Ro

IPC分类号： G02F1/1343 ,  H01L21/00

CPC分类号： H01L27/3265 ,  G02F1/136213 ,  G02F2201/40 ,  H01L27/1255 ,  H01L51/56

摘要： A display device and a method of manufacturing the same are disclosed. In one embodiment, the display device includes: i) a first insulating layer formed on a first substrate, ii) a lower electrode formed on the first insulating layer, iii) a dielectric layer formed to surround the top and side of the lower electrode, wherein the dielectric layer does not cover a pixel region of the display device and iv) an upper electrode formed on the dielectric layer.

摘要翻译： 公开了一种显示装置及其制造方法。 在一个实施例中，显示装置包括：i）形成在第一基板上的第一绝缘层，ii）形成在第一绝缘层上的下电极，iii）形成为围绕下电极的顶部和侧面的介电层， 其中所述电介质层不覆盖所述显示装置的像素区域，以及iv）形成在所述电介质层上的上电极。

公开(公告)号：US20110241005A1

公开(公告)日：2011-10-06

申请号：US13079979

申请日：2011-04-05

申请人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Seong-Yeun Kang ,  Jin-Suk Park

发明人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Seong-Yeun Kang ,  Jin-Suk Park

IPC分类号： H01L29/04 ,  H01L21/82

CPC分类号： H01L29/78633 ,  G02F1/136209 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1281 ,  H01L27/3272 ,  H01L2227/323

摘要： A display device capable of implementing the light shielding effect and process simplification, and a method of manufacturing the display device. The display device includes a transistor formed in a first region on a substrate, a pixel electrode formed in a second region on the substrate, a buffer layer formed beneath the transistor in the first region, and a light shielding layer formed between the buffer layer and the substrate in the first region. In the display device, the light shielding layer may include a semiconductor material.

摘要翻译： 能够实现遮光效果和处理简化的显示装置，以及制造该显示装置的方法。 显示装置包括形成在基板上的第一区域中的晶体管，形成在基板上的第二区域中的像素电极，形成在第一区域中的晶体管下方的缓冲层，以及形成在缓冲层和 第一区域中的衬底。 在显示装置中，遮光层可以包括半导体材料。

公开(公告)号：US20110221991A1

公开(公告)日：2011-09-15

申请号：US12966788

申请日：2010-12-13

申请人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Jin-Suk Park ,  Seong-Yeun Kang

发明人： Sung-In Ro ,  Ji-Yong Park ,  Kyung-Min Park ,  Jin-Suk Park ,  Seong-Yeun Kang

IPC分类号： G02F1/136 ,  H01L29/04 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78645

摘要： A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.

摘要翻译： 公开了一种薄膜晶体管及其制造方法及具有该薄膜晶体管的显示装置。 薄膜晶体管包括形成在基板上的半导体层，形成在包括半导体层的基板上的栅极绝缘层，形成在半导体层上方的绝缘栅上的栅电极，与半导体层连接的源极和漏极，以及 形成在与栅电极重叠的半导体层上的3.5〜4.5个突起。 可以通过调节突起的数量来防止薄膜晶体管的故障和显示装置的劣化的图像质量，以使漏电流和缺陷最小化。

公开(公告)号：US09321940B2

公开(公告)日：2016-04-26

申请号：US13995873

申请日：2011-11-21

申请人： Ji-Yong Park ,  Moon-Ki Yea ,  Jung-Eun Ha

发明人： Ji-Yong Park ,  Moon-Ki Yea ,  Jung-Eun Ha

IPC分类号： B29C65/52 ,  B32B37/02 ,  B32B37/12 ,  B32B37/28 ,  B32B38/10 ,  B32B38/12 ,  B32B38/14 ,  C09J7/02 ,  B44C1/17 ,  B44C1/10

CPC分类号： C09J7/0264 ,  B44C1/105 ,  B44C1/1729 ,  C09J7/22 ,  Y10T428/1476

摘要： The present invention relates to a decorative sheet for decorating a surface of a three-dimensional molded material, a method for manufacturing same, and a method for decorating the surface of the molded material using same. The method for manufacturing the decorative sheet includes: a printed sheet preparation step of preparing a printed sheet including a base layer and a surface treatment layer; an boding step of preparing an adhesive layer containing an adhesive and a release film layer by applying the adhesive onto a release film to be layered onto a back side of the adhesive layer, and laminating the printed sheet on a surface of the adhesive layer being bonded; and a drying-solidifying step in which the adhesive layer is changed from a liquid state into a solid state.

摘要翻译： 本发明涉及一种用于装饰三维成型材料的表面的装饰片，其制造方法，以及使用该装饰材料装饰成型材料的表面的方法。 制造装饰片的方法包括：印刷片制备步骤，制备包括基底层和表面处理层的印刷片; 通过将粘合剂施加到剥离膜上以层压到粘合剂层的背面上来制备包含粘合剂和剥离膜层的粘合剂层的粘合步骤，并且将粘合剂层粘合在粘合剂层的表面上 ; 和干燥固化步骤，其中粘合剂层从液态变为固态。

公开(公告)号：US08852853B2

公开(公告)日：2014-10-07

申请号：US13178013

申请日：2011-07-07

申请人： Ki Hoon Kim ,  Ji-Yong Park ,  Jin-Suk Park ,  Sunghyuk Kim ,  Min-Chang Kim ,  Kyung Hyun Choi

发明人： Ki Hoon Kim ,  Ji-Yong Park ,  Jin-Suk Park ,  Sunghyuk Kim ,  Min-Chang Kim ,  Kyung Hyun Choi

IPC分类号： G03F7/20 ,  G02F1/1333 ,  G03F1/54 ,  G02F1/1337 ,  G02F1/1341

CPC分类号： G02F1/133351 ,  G02F2001/133796 ,  G02F2001/13415 ,  G03F1/54

摘要： A photo-mask is capable of preventing stain defects and a method for fabricating a liquid crystal display device using the photo-mask which achieves the same capability. The photo-mask includes a transparent substrate configured to transmit ultraviolet light and a light shielding layer configured to block ultraviolet light on a surface of the transparent substrate. The light shielding layer includes an absorption layer configured to absorb ultraviolet light.

摘要翻译： 光掩模能够防止污点缺陷，以及使用实现相同能力的光掩模制造液晶显示装置的方法。 光掩模包括被配置为透射紫外光的透明基板和被构造为在透明基板的表面上阻挡紫外光的遮光层。 遮光层包括吸收紫外线的吸收层。