Methods for manufacturing RFID tags and structures formed therefrom
    1.
    发明申请
    Methods for manufacturing RFID tags and structures formed therefrom 有权
    用于制造由其形成的RFID标签和结构的方法

    公开(公告)号:US20070007342A1

    公开(公告)日:2007-01-11

    申请号:US11452108

    申请日:2006-06-12

    IPC分类号: G06K7/00 G08B13/14

    摘要: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.

    摘要翻译: 射频识别(RFID)标签及其制造方法。 RFID设备通常包括(1)金属天线和/或电感器; (2)其上的介电层,用于支撑和绝缘来自金属天线和/或电感器的集成电路; (3)介电层上的多个二极管和多个晶体管,二极管具有至少一个与晶体管共同的层; 和(4)与金属天线和/或电感器以及至少一些二极管电连通的多个电容器,所述多个电容器具有与所述多个二极管共同的至少一个层和/或与所述多个二极管的触点 二极管和晶体管。 该方法优选将液态含硅油墨沉积物集成到用于制造RFID电路的成本有效的集成制造工艺中。 此外,与含有机电子器件的标签相比,本RFID标签通常提供更高的性能(例如,改进的电气特性)。

    MOS transistor with laser-patterned metal gate, and method for making the same

    公开(公告)号:US20060211187A1

    公开(公告)日:2006-09-21

    申请号:US11203563

    申请日:2005-08-11

    IPC分类号: H01L21/8234

    摘要: A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.

    RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same
    3.
    发明申请
    RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same 有权
    具有集成插入器的RF和/或RF识别标签/设备及其制造和使用方法

    公开(公告)号:US20070273515A1

    公开(公告)日:2007-11-29

    申请号:US11243460

    申请日:2005-10-03

    IPC分类号: G08B13/14

    摘要: A MOS RF surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes an interposer, an antenna and/or inductor on the interposer, and integrated circuitry on the interposer in a location other than the antenna and/or inductor. The integrated circuitry generally has a lowest layer in physical contact with the interposer surface. The method of manufacture generally includes forming a lowest layer of integrated circuitry on an interposer, forming successive layers of the integrated circuitry on the lowest layer of integrated circuitry, and attaching an electrically conductive functional layer to the interposer. Alternatively, an electrically conductive structure may be formed from a functional layer attached to the interposer. The method of use generally includes causing and/or inducing a current in the present tag sufficient for it to generate, reflect or modulate a detectable electromagnetic signal, detecting the signal, and optionally, processing information conveyed by the detectable electromagnetic signal. The present invention advantageously provides a low cost RFID tag capable of operating at MHz frequencies that can be manufactured in a shorter time period than conventional RFID tags that manufacture all active electrical devices on a conventional wafer.

    摘要翻译: MOS射频监视和/或识别标签及其制造和使用的方法。 标签通常在插入器上包括插入器,天线和/或电感器,以及在天线和/或电感器之外的位置处的插入器上的集成电路。 集成电路通常具有与中介层表面物理接触的最低层。 制造方法通常包括在插入器上形成集成电路的最低层,在集成电路的最低层上形成集成电路的连续层,以及将导电功能层附着到插入器上。 或者,可以由附接到插入件的功能层形成导电结构。 使用的方法通常包括引起和/或诱导本标签中的电流,足以使其产生,反射或调制可检测的电磁信号,检测信号,以及可选地处理由可检测电磁信号传送的信息。 本发明有利地提供了一种低成本的RFID标签,能够以比在传统晶片上制造所有有源电气设备的常规RFID标签更短的时间周期内以MHz频率工作。