PROCESSES AND SYSTEMS FOR RECOVERING CATALYST PROMOTER FROM CATALYST SUBSTRATES
    1.
    发明申请
    PROCESSES AND SYSTEMS FOR RECOVERING CATALYST PROMOTER FROM CATALYST SUBSTRATES 有权
    从催化基质中回收催化剂促进剂的方法和系统

    公开(公告)号:US20090148361A1

    公开(公告)日:2009-06-11

    申请号:US11950468

    申请日:2007-12-05

    摘要: Processes and systems for recovering promoter-containing compounds, for example, perrhenates, from promoter-containing catalyst substrates, for example, substrates containing precious metals, such as silver, are disclosed. The processes include contacting the substrates with a first solution adapted to remove at least some of the catalyst promoter from the substrates, for example, an oxidizing agent, to produce a second solution containing catalyst promoter, passing the second solution through a porous medium adapted to capture at least some of the catalyst promoter, for example, a ion exchange resin; and passing a third solution, for example, a base solution, through the porous medium to remove at least some of the catalyst promoter from the porous medium and produce a fourth solution containing compounds having a catalyst promoter. Systems adapted to practice these processes are also disclosed.

    摘要翻译: 公开了用于从含有助催化剂的催化剂底物(例如含有贵金属的底物如银)回收含有助催化剂的化合物,例如高铼酸盐的方法和系统。 所述方法包括使底物与第一溶液接触,所述第一溶液适于从底物例如氧化剂中除去至少一些催化剂促进剂,以产生含有催化剂促进剂的第二溶液,使第二溶液通过适于 捕获至少一些催化剂促进剂,例如离子交换树脂; 并通过多孔介质通过第三溶液,例如碱溶液,以从多孔介质中除去至少一些催化剂促进剂,并产生含有具有催化剂促进剂的化合物的第四溶液。 还公开了适于实施这些过程的系统。

    Processes and systems for recovering catalyst promoter from catalyst substrates
    2.
    发明授权
    Processes and systems for recovering catalyst promoter from catalyst substrates 有权
    从催化剂底物回收催化剂促进剂的方法和系统

    公开(公告)号:US08187561B2

    公开(公告)日:2012-05-29

    申请号:US11950468

    申请日:2007-12-05

    IPC分类号: C01G45/00

    摘要: Processes and systems for recovering promoter-containing compounds, for example, perrhenates, from promoter-containing catalyst substrates, for example, substrates containing precious metals, such as silver, are disclosed. The processes include contacting the substrates with a first solution adapted to remove at least some of the catalyst promoter from the substrates, for example, an oxidizing agent, to produce a second solution containing catalyst promoter, passing the second solution through a porous medium adapted to capture at least some of the catalyst promoter, for example, a ion exchange resin; and passing a third solution, for example, a base solution, through the porous medium to remove at least some of the catalyst promoter from the porous medium and produce a fourth solution containing compounds having a catalyst promoter. Systems adapted to practice these processes are also disclosed.

    摘要翻译: 公开了用于从含有助催化剂的催化剂底物(例如含有贵金属的底物如银)回收含有助催化剂的化合物,例如高铼酸盐的方法和系统。 所述方法包括使底物与第一溶液接触,所述第一溶液适于从底物例如氧化剂中除去至少一些催化剂促进剂,以产生含有催化剂促进剂的第二溶液,使第二溶液通过适于 捕获至少一些催化剂促进剂,例如离子交换树脂; 并通过多孔介质通过第三溶液,例如碱溶液,以从多孔介质中除去至少一些催化剂促进剂,并产生含有具有催化剂促进剂的化合物的第四溶液。 还公开了适于实施这些过程的系统。

    Method for depositing and etching ruthenium layers
    3.
    发明授权
    Method for depositing and etching ruthenium layers 失效
    沉积和蚀刻钌层的方法

    公开(公告)号:US07129170B2

    公开(公告)日:2006-10-31

    申请号:US11200073

    申请日:2005-08-10

    IPC分类号: H01L21/44

    摘要: The present invention provides a method for purifying ruthenium sources to obtain high purity ruthenium metal and form a ruthenium metal pattern on a semiconductor substrate without the need for high temperature processing or a complex series of wet processes. A gas stream including ozone (O3) is brought into contact with a ruthenium source in one or more reaction vessels to form ruthenium tetraoxide (RuO4), a compound that is a gas at the reaction conditions. The ruthenium tetraoxide, along with unreacted ozone and the remainder of the gas stream is then fed into a collection vessel where the gaseous ruthenium tetraoxide is reduced to form a ruthenium dioxide (RuO2) layer on a semiconductor substrate. The deposited ruthenium dioxide is then reduced, preferably with hydrogen, to produce highly pure ruthenium metal that may be, in turn, patterned and dry etched using ozone as an etchant gas.

    摘要翻译: 本发明提供一种用于纯化钌源以获得高纯度钌金属并在半导体衬底上形成钌金属图案的方法,而不需要高温处理或复杂的一系列湿法。 使包含臭氧(O 3 3 N)的气流与一个或多个反应容器中的钌源接触以形成四氧化钌(RuO 4 S 4),其为化合物 反应条件下的气体。 然后将四氧化钌,以及未反应的臭氧和气流的其余部分进料到收集容器中,在该收集容器中,气态钌四氧化物被还原以在半导体衬底上形成二氧化钌(RuO 2 N 2)层 。 然后沉积的二氧化钌优选用氢气还原,以产生高纯度的钌金属,其可以使用臭氧作为蚀刻剂气体进行图案化和干蚀刻。

    Method for purifying ruthenium and related processes
    4.
    发明授权
    Method for purifying ruthenium and related processes 有权
    钌的纯化方法及相关工艺

    公开(公告)号:US06458183B1

    公开(公告)日:2002-10-01

    申请号:US09655307

    申请日:2000-09-05

    IPC分类号: C01G5500

    摘要: The present invention provides a method for purifying ruthenium sources to obtain high purity ruthenium metal without the need for high temperature processing, expensive reagents, complex series of wet processes, or expensive equipment. According to the present invention, a gas stream including ozone (O3) is brought into contact with a ruthenium source, such as a commercial ruthenium metal sponge, in one or more reaction vessels. The ozone reacts with the ruthenium present in the ruthenium source to form ruthenium tetraoxide (RuO4), a compound that is a gas at the reaction conditions. The ruthenium tetraoxide, along with unreacted ozone and the remainder of the gas stream is then fed into a collection vessel where a major portion of the gaseous ruthenium tetraoxide is thermally reduced to form ruthenium dioxide (RuO2) deposits within the collection vessel. The deposited ruthenium dioxide is then reduced, preferably with hydrogen, to produce highly pure ruthenium metal that is, in turn removed from the collection vessel.

    摘要翻译: 本发明提供一种用于纯化钌源以获得高纯度钌金属而不需要高温处理,昂贵的试剂,复杂系列的湿法或昂贵的设备的方法。 根据本发明,在一个或多个反应容器中,使包含臭氧(O 3)的气流与诸如市售的钌金属海绵等钌源接触。 臭氧与钌源中存在的钌反应形成四氧化钌(RuO 4),RuO 4是在反应条件下为气体的化合物。 然后将四氧化钌,以及未反应的臭氧和剩余的气流进料到收集容器中,其中大部分气态四氧化钌被热还原以在收集容器内形成二氧化钌(RuO 2)沉积物。 然后沉积的二氧化钌优选用氢气还原,以产生高纯度的钌金属,其又从收集容器中除去。