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    Dry etching methods
    2.
    发明授权
    Dry etching methods 有权
    干蚀刻方法

    公开(公告)号：US07368396B2

    公开(公告)日：2008-05-06

    申请号：US11173395

    申请日：2005-07-01

    申请人： James M. Mrvos ,  Girish S. Patil ,  Karthik Vaideeswaran

    发明人： James M. Mrvos ,  Girish S. Patil ,  Karthik Vaideeswaran

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： B81C1/00531 ,  B81C2201/0132 ,  H01J37/321 ,  H01L21/30655 ,  H01L21/3081

    摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.

    摘要翻译： 使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（统称为“槽”）的工艺。 该方法包括将第一层施加到衬底的第一表面以在衬底的第一表面上提供蚀刻掩模材料层。 将第二层施加到衬底的第二表面，以在衬底的第二表面上提供蚀刻停止材料层。 第一层和第二层在一种或多种有机溶剂中具有类似的溶解度。 从晶片的第一表面蚀刻衬底以在衬底中提供槽。 在蚀刻基板之后，通过用单一有机溶剂接触基板的第一表面和第二表面来去除蚀刻掩模材料层和蚀刻停止材料层。

    Radiation curable compositions having improved flexibility
    4.
    发明授权
    Radiation curable compositions having improved flexibility 有权
    具有改善柔性的可辐射固化组合物

    公开(公告)号：US07423073B2

    公开(公告)日：2008-09-09

    申请号：US10995806

    申请日：2004-11-23

    申请人： James M. Mrvos ,  Girish S. Patil ,  Karthik Vaideeswaran

    发明人： James M. Mrvos ,  Girish S. Patil ,  Karthik Vaideeswaran

    IPC分类号： C08F2/46 ,  C08F2/50 ,  C08J3/28 ,  B41J2/135 ,  B41J2/16

    CPC分类号： C08G59/68 ,  B41J2/1603 ,  B41J2/1637 ,  C08L63/00 ,  G03F7/038

    摘要： A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.

    摘要翻译： 一种具有改善柔性的辐射固化树脂组合物。 所述可辐射固化组合物具有约5至约50重量％的双官能聚合物; 约1至约10重量％的光引发剂; 约1至约10重量％的增韧剂，其中所述增韧剂的分子量范围为约400至约10,000; 和约30至约90重量％的非光反应性溶剂，其中重量百分比基于树脂组合物的总重量。 还包括使用该辐射固化树脂组合物的喷墨打印头和喷墨打印设备，包括喷墨打印头。

    Microfluidic substrates having improved fluidic channels
    6.
    发明授权
    Microfluidic substrates having improved fluidic channels 有权
    具有改进的流体通道的微流体基底

    公开(公告)号：US07438392B2

    公开(公告)日：2008-10-21

    申请号：US11281090

    申请日：2005-11-17

    申请人： Karthik Vaideeswaran ,  Andrew L. McNees ,  John W. Krawczyk ,  James M. Mrvos ,  Mark L. Doerre ,  Jason T. Vanderpool ,  Girish S. Patil ,  Richard L. Warner

    发明人： Karthik Vaideeswaran ,  Andrew L. McNees ,  John W. Krawczyk ,  James M. Mrvos ,  Mark L. Doerre ,  Jason T. Vanderpool ,  Girish S. Patil ,  Richard L. Warner

    IPC分类号： B41J2/05

    CPC分类号： B41J2/1632 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1645 ,  B41J2/1646

    摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

    摘要翻译： 一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。 该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面 或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。 通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于 所述侧壁表面包含所述蚀刻停止层涂层。

    Methods of deep reactive ion etching
    7.
    发明授权
    Methods of deep reactive ion etching 失效
    深反应离子蚀刻方法

    公开(公告)号：US07560039B2

    公开(公告)日：2009-07-14

    申请号：US10938009

    申请日：2004-09-10

    申请人： John W. Krawczyk ,  Andrew L. McNees ,  James M. Mrvos

    发明人： John W. Krawczyk ,  Andrew L. McNees ,  James M. Mrvos

    IPC分类号： B41J2/16

    CPC分类号： B41J2/1631 ,  B41J2/1603 ,  B41J2/1628

    摘要： A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.

    摘要翻译： 一种从其第一表面到第二表面基本上同时形成通过半导体衬底的厚度的至少两个流体供给槽的方法。 该方法包括以下步骤：将光致抗蚀剂层施加到半导体衬底的第一表面。 使用用于第一流体供应槽的灰度掩模对光致抗蚀剂层进行图案化和显影。 然后对半导体衬底进行反应离子蚀刻，以形成通过衬底厚度的至少两个流体供给槽。 第一流体供应槽基本上比第二流体供应槽宽，并且第一和第二流体供应槽以基本上相同的速率被蚀刻穿过基板。

    Jet ink with amine surfactant
    8.
    发明授权
    Jet ink with amine surfactant 失效
    具有胺表面活性剂的喷墨

    公开(公告)号：US5562762A

    公开(公告)日：1996-10-08

    申请号：US442596

    申请日：1995-05-17

    申请人： James M. Mrvos ,  Ann M. Piekunka ,  Richard B. Watkins

    发明人： James M. Mrvos ,  Ann M. Piekunka ,  Richard B. Watkins

    IPC分类号： C09D11/00 ,  C09D11/02

    CPC分类号： C09D11/38

    摘要： An aqueous jet ink of water, dissolved dyes and a surfactant of R--N(C.sub.2 H.sub.4 O).sub.x (C.sub.2 H.sub.4 O).sub.y H, where x+y is from 5 to 25, with x and y each at least 2, and R is alkyl or oxygen containing. The static surface tension is less than 40 dynes/cm while the dynamic surface tension is about 65 dynes/cm. Satellites and splatter in thermal drop on demand printing are greatly reduced, and drop misdirection is reduced.

    摘要翻译： 水，水溶性染料和R-N（C 2 H 4 O）x（C 2 H 4 O）y H表面活性剂的水性喷墨油墨，其中x + y为5至25，x和y各自至少为2，R为烷基或含氧。 静态表面张力小于40达因/厘米，动态表面张力约为65达因/厘米。 卫星和飞溅的热降点击打印大大减少，并且降低误差方向。

    Device for ink refill of a reservoir in a print cartridge
    10.
    发明授权
    Device for ink refill of a reservoir in a print cartridge 失效
    打印墨盒中墨水盒的墨水再充填装置

    公开(公告)号：US5510820A

    公开(公告)日：1996-04-23

    申请号：US872749

    申请日：1992-04-22

    申请人： Rodney O. Aulick ,  Bradley L. Beach ,  Terence E. Franey ,  James M. Mrvos ,  David G. Vella

    发明人： Rodney O. Aulick ,  Bradley L. Beach ,  Terence E. Franey ,  James M. Mrvos ,  David G. Vella

    IPC分类号： B41J2/175

    CPC分类号： B41J2/17506

    摘要： An ink refill device includes a body having a chamber with ink therein. The chamber has one wall formed of a frangible material. The body has a needle communicating the chamber with a reservoir, which has a foam of a controlled porosity therein, in a print cartridge when the needle is inserted in a vent of the reservoir to fill the reservoir. Breaking of the frangible wall of the chamber with the needle extending downwardly enables ink to flow from the chamber at a controlled flow rate to the reservoir in the cartridge. In the preferred embodiment, the needle has one or more notched openings adjacent its distal end to increase its surface area through which ink flows to increase flow of ink to the reservoir.

    摘要翻译： 一种墨水补充装置包括具有其中具有墨水的腔室的主体。 该室具有由易碎材料形成的一个壁。 当针插入储存器的通风口以填充储存器时，主体具有将打印腔连通到具有其中具有受控多孔性的泡沫的储存器。 用针向下延伸的针断裂腔室的易碎壁使得墨水能够以受控的流速从腔室流到墨盒中的储存器。 在优选实施例中，针具有邻近其远端的一个或多个凹口，以增加墨的流动面积，以增大油墨到储存器的流动。