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    Methods for processing substrates in process systems having shared resources
    1.
    发明授权
    Methods for processing substrates in process systems having shared resources 有权
    在具有共享资源的处理系统中处理衬底的方法

    公开(公告)号：US08496756B2

    公开(公告)日：2013-07-30

    申请号：US12915240

    申请日：2010-10-29

    申请人： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    发明人： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    IPC分类号： B08B6/00

    CPC分类号： H01L21/6719 ,  H01J37/32899

    摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

    摘要翻译： 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

    Methods for monitoring processing equipment
    4.
    发明授权
    Methods for monitoring processing equipment 有权
    监测加工设备的方法

    公开(公告)号：US08473247B2

    公开(公告)日：2013-06-25

    申请号：US12915260

    申请日：2010-10-29

    申请人： James P. Cruse ,  Dermot Cantwell ,  Michael R. Rice ,  Thorsten Kril ,  Charles Hardy

    发明人： James P. Cruse ,  Dermot Cantwell ,  Michael R. Rice ,  Thorsten Kril ,  Charles Hardy

    IPC分类号： G04F1/00 ,  G04F3/00 ,  G04F5/00 ,  G04F7/00 ,  G04F8/00 ,  G04F10/00 ,  G04G5/00 ,  G04G7/00 ,  G40G15/00

    CPC分类号： H01L21/67276

    摘要： Methods for monitoring processing equipment are provided herein. In some embodiments, a method for monitoring processing equipment when in an idle state for a period of idle time may include selecting a test from a list of a plurality of tests to perform on the processing equipment when the processing equipment is in the idle state, wherein the test has a total run time; starting the selected test; comparing a remaining idle time of the period of idle time to a remaining run time of the total run time as the selected test is performed; and determining whether to end the selected test prior to completing the total run time in response to the comparison.

    摘要翻译： 本文提供了监控处理设备的方法。 在一些实施例中，一种用于在空闲状态下监视处理设备一段空闲时间的方法可以包括：当处理设备处于空闲状态时，从处理设备执行的多个测试的列表中选择一个测试， 其中所述测试具有总运行时间; 开始选择测试; 将执行所选择的测试的空闲时间的剩余空闲时间与总运行时间的剩余运行时间进行比较; 以及响应于所述比较，确定在完成所述总运行时间之前是否结束所选择的测试。

    Pulsed plasma monitoring using optical sensor and a signal analyzer forming a mean waveform
    7.
    发明授权
    Pulsed plasma monitoring using optical sensor and a signal analyzer forming a mean waveform 有权
    使用光学传感器的脉冲等离子体监测和形成平均波形的信号分析仪

    公开(公告)号：US09200950B2

    公开(公告)日：2015-12-01

    申请号：US14189536

    申请日：2014-02-25

    申请人： Lei Lian ,  Quentin Walker ,  Dermot Cantwell

    发明人： Lei Lian ,  Quentin Walker ,  Dermot Cantwell

    IPC分类号： G01J1/32 ,  G01J1/42

    CPC分类号： G01J1/42 ,  G01J1/0488 ,  G01J3/443 ,  G01J2001/4238

    摘要： Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.

    摘要翻译： 使用光学传感器描述脉冲等离子体的监视。 在一个示例中，本发明包括在半导体等离子体处理室中接收由脉冲等离子体发射的光，以高于脉冲等离子体的脉冲速率的采样速率对接收的光进行采样，其中采样的光具有周期性幅度波形， 采样率高于振幅波形周期，累积多个采样波形以形成平均波形，并将平均波形的特性传输到腔室控制工具。

    Pulsed Plasma Monitoring Using Optical Sensor
    10.
    发明申请
    Pulsed Plasma Monitoring Using Optical Sensor 有权
    脉冲等离子体监测使用光学传感器

    公开(公告)号：US20150241272A1

    公开(公告)日：2015-08-27

    申请号：US14189536

    申请日：2014-02-25

    申请人： Lei Lian ,  Quentin Walker ,  Dermot Cantwell

    发明人： Lei Lian ,  Quentin Walker ,  Dermot Cantwell

    IPC分类号： G01J1/42

    CPC分类号： G01J1/42 ,  G01J1/0488 ,  G01J3/443 ,  G01J2001/4238

    摘要： Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.

    摘要翻译： 使用光学传感器描述脉冲等离子体的监视。 在一个示例中，本发明包括在半导体等离子体处理室中接收由脉冲等离子体发射的光，以高于脉冲等离子体的脉冲速率的采样速率对接收的光进行采样，其中采样的光具有周期性幅度波形， 采样率高于振幅波形周期，累积多个采样波形以形成平均波形，并将平均波形的特性传输到腔室控制工具。