利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.015 秒)

    Pressure gradient CVI/CVD process
    1.
    发明授权
    Pressure gradient CVI/CVD process 有权
    压力梯度CVI / CVD工艺

    公开(公告)号：US07892646B1

    公开(公告)日：2011-02-22

    申请号：US12109946

    申请日：2008-04-25

    申请人： James W. Rudolph ,  Vincent Fry

    发明人： James W. Rudolph ,  Vincent Fry

    IPC分类号： B32B9/00

    CPC分类号： C23C16/045 ,  C23C16/45557 ,  F16D65/12 ,  F16D2200/0052 ,  Y10T428/30

    摘要： A pressure gradient CVI/CVD process includes providing a furnace defining an outer volume. Porous structures and ring-like spacers are assembled in a stack with a ring-like spacer between each adjacent pair of porous structures. The stack of porous structures is disposed between a bottom plate and a top plate in the furnace, wherein the bottom plate, the stack of porous structures, and the ring-like spacers define an enclosed cavity. A channel provides fluid communication between the enclosed cavity and the outer volume. A gas composition is introduced into the enclosed cavity. A portion of the gas composition flows through the channel. A pressure gradient is maintained between the enclosed cavity and the outer volume. The gas composition in the outer volume is provided at a pressure of at least about 15 torr. The porous structures are densified.

    摘要翻译： 压力梯度CVI / CVD工艺包括提供限定外部体积的炉。 多孔结构和环状间隔物在每个相邻的一对多孔结构之间以一个环形隔离物堆叠组装。 多孔结构的堆叠被布置在炉中的底板和顶板之间，其中底板，多孔结构的堆叠和环形间隔件限定封闭的腔。 通道提供封闭空腔和外部容积之间的流体连通。 将气体组合物引入封闭空腔中。 一部分气体组成流过通道。 在封闭空腔和外部体积之间保持压力梯度。 外部体积中的气体组成设置在至少约15托的压力下。 多孔结构致密化。

    Methods and apparatus for controlled chemical vapor deposition
    3.
    发明授权
    Methods and apparatus for controlled chemical vapor deposition 有权
    控制化学气相沉积的方法和装置

    公开(公告)号：US08372482B2

    公开(公告)日：2013-02-12

    申请号：US12395414

    申请日：2009-02-27

    申请人： Vincent Fry

    发明人： Vincent Fry

    IPC分类号： B23P19/10 ,  C23C16/00

    CPC分类号： C23C16/45578 ,  C23C16/045 ,  C23C16/45591 ,  Y10T29/49945

    摘要： A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system include a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

    摘要翻译： 提供一种气体注射器系统，其允许在CVD或CVI过程中改进蒸汽材料的分布和方向控制。 可以使用气体喷射器系统，而不会在多个CVD过程中经历气体喷射器管孔的显着堵塞。 此外，气体喷射器系统包括双孔释放系统和/或允许蒸汽材料基本水平地且基本上垂直地流动。

    METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION
    5.
    发明申请
    METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION 审中-公开
    控制化学气相沉积的方法和装置

    公开(公告)号：US20120291705A1

    公开(公告)日：2012-11-22

    申请号：US13561965

    申请日：2012-07-30

    申请人： Vincent Fry

    发明人： Vincent Fry

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45578 ,  C23C16/045 ,  C23C16/45591 ,  Y10T29/49945

    摘要： A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple. CVD procedures. Further, a gas injector system provided includes a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

    摘要翻译： 提供一种气体注射器系统，其允许在CVD或CVI过程中改进蒸汽材料的分布和方向控制。 可以使用气体喷射器系统，而不会在多个气体喷射器管孔之间显着堵塞。 CVD程序。 此外，提供的气体注射器系统包括双孔释放系统和/或允许蒸汽材料基本水平地且基本上垂直地流动。

    Methods and apparatus for controlled chemical vapor deposition
    6.
    发明授权
    Methods and apparatus for controlled chemical vapor deposition 有权

    公开(公告)号：US10415138B2

    公开(公告)日：2019-09-17

    申请号：US13561965

    申请日：2012-07-30

    申请人： Vincent Fry

    发明人： Vincent Fry

    IPC分类号： C23C16/455 ,  C23C16/04

    摘要： A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system provided includes a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

    METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION
    7.
    发明申请
    METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION 有权
    控制化学气相沉积的方法和装置

    公开(公告)号：US20100221427A1

    公开(公告)日：2010-09-02

    申请号：US12395414

    申请日：2009-02-27

    申请人： Vincent Fry

    发明人： Vincent Fry

    IPC分类号： C23C16/44 ,  C23C16/54

    CPC分类号： C23C16/45578 ,  C23C16/045 ,  C23C16/45591 ,  Y10T29/49945

    摘要： A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system include a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.

    摘要翻译： 提供一种气体注射器系统，其允许在CVD或CVI过程中改进蒸汽材料的分布和方向控制。 可以使用气体喷射器系统，而不会在多个CVD过程中经历气体喷射器管孔的显着堵塞。 此外，气体喷射器系统包括双孔释放系统和/或允许蒸汽材料基本水平地且基本上垂直地流动。

    Non-pressure gradient single cycle CVI/CVD apparatus and method
    8.
    发明申请
    Non-pressure gradient single cycle CVI/CVD apparatus and method 有权
    非压力梯度单循环CVI / CVD装置及方法

    公开(公告)号：US20060269665A1

    公开(公告)日：2006-11-30

    申请号：US11141499

    申请日：2005-05-31

    申请人： James Rudolph ,  Vincent Fry

    发明人： James Rudolph ,  Vincent Fry

    IPC分类号： C23C16/00

    CPC分类号： C04B35/83 ,  C04B2235/614 ,  C04B2235/77 ,  C23C16/045 ,  C23C16/26

    摘要： A method for densifying porous structures inside a furnace using non-pressure gradient CVI/CVD in a single cycle is described. A hardware assembly for use in the single cycle non-pressure gradient CVI/CVD process is provided as well are process and process conditions are described.

    摘要翻译： 描述了在单个循环中使用非压力梯度CVI / CVD致密化炉内多孔结构的方法。 提供了用于单周期非压力梯度CVI / CVD工艺的硬件组件，以及描述了工艺和工艺条件。