公开(公告)号：US06713127B2

公开(公告)日：2004-03-30

申请号：US10041026

申请日：2001-12-28

申请人： Janardhanan Anand Subramony ,  Yoshitaka Yokota ,  Ramaseshan Suryanarayanan Iyer ,  Lee Luo ,  Aihua Chen

发明人： Janardhanan Anand Subramony ,  Yoshitaka Yokota ,  Ramaseshan Suryanarayanan Iyer ,  Lee Luo ,  Aihua Chen

IPC分类号： C23C1640

CPC分类号： C23C16/45512 ,  C23C16/308 ,  C23C16/401 ,  C23C16/56

摘要： An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

摘要翻译： 描述了氧化物和氧氮化物膜及其制造方法。 氧化物或氧氮化物膜在放置在沉积室中的衬底上生长。 使用热能源在沉积室中分解硅源气体（或具有氮化源气体的硅源气体）和氧化源气体。 在基板上方形成氧化硅（或氮氧化物）膜，其中沉积室的总压力保持在50Torr至350Torr的范围内，并且其中硅源气体（或硅源气体 氮化源气体），氧化源气体在沉积过程中为1:50至1：10000。

公开(公告)号：US07119016B2

公开(公告)日：2006-10-10

申请号：US10684596

申请日：2003-10-15

申请人： Ashima B. Chakravarti ,  Anita Madan ,  Woo-Hyeong Lee ,  Gregory Wayne Dibello ,  Ramaseshan Suryanarayanan Iyer

发明人： Ashima B. Chakravarti ,  Anita Madan ,  Woo-Hyeong Lee ,  Gregory Wayne Dibello ,  Ramaseshan Suryanarayanan Iyer

IPC分类号： H01L21/36

CPC分类号： C23C16/36 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262

摘要： A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.

摘要翻译： 至少包含任何组合中的Si，N和C的化合物，例如式（R-NH）4-n-SiX n N的化合物，其中R是烷基 （其可以相同或不同），n为1,2或3，X为H或卤素（例如双叔丁基氨基硅烷（BTBAS））可与硅烷或硅烷衍生物混合 制作一部电影。 可以通过混合硅烷（SiH 4 SO 4）或硅烷衍生物和包括Si，N和C的化合物如BTBAS来生长多晶硅硅膜。 可以通过改变试剂和条件来生长可控地掺杂有碳和/或氮的膜（例如层状膜）。