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    UPSTREAM PROCESS MONITORING FOR DEPOSITION AND ETCH CHAMBERS
    1.
    发明公开
    UPSTREAM PROCESS MONITORING FOR DEPOSITION AND ETCH CHAMBERS 审中-公开

    公开(公告)号：US20240312812A1

    公开(公告)日：2024-09-19

    申请号：US18577147

    申请日：2022-07-07

    申请人： INFICON, INC.

    发明人： Matan Lapidot ,  Shay Yaari

    IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  H01L21/66

    CPC分类号： H01L21/67253 ,  C23C16/45512 ,  C23C16/52 ,  H01L22/26

    摘要： A semiconductor fabrication system includes a mixing bowl, a distribution system receiving a mixture of gases from the mixing bowl, and a process chamber in fluid communication with the distribution system for performing a variety of semiconductor processes, e.g., deposition and etch processes, on a substrate. A plurality of mixing bowl sensors are disposed within a cavity of the mixing bowl and issue gas signals indicative of the type and flow-rate of the detected gas. Further, at least one process chamber sensor is provided within the process chamber and disposed proximal to the substrate. The process chamber sensor has a resonance property which changes upon exposure to the semiconductor process, i.e., a build-up of deposited material on a surface of the sensor, and issues material process signals indicative of the anticipated material on the surface of the substrate.

    Film forming method and film forming device
    7.
    发明授权
    Film forming method and film forming device 有权

    公开(公告)号：US09777377B2

    公开(公告)日：2017-10-03

    申请号：US14411525

    申请日：2013-06-11

    申请人： TOKYO ELECTRON LIMITED

    发明人： Shigeyuki Okura ,  Hajime Yamanaka

    IPC分类号： C23C16/52 ,  C23C16/448 ,  C23C16/455 ,  C23C16/44

    CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45561

    摘要： STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.

    Pulsed valve manifold for atomic layer deposition
    9.
    发明授权
    Pulsed valve manifold for atomic layer deposition 有权
    用于原子层沉积的脉冲阀歧管

    公开(公告)号：US09574268B1

    公开(公告)日：2017-02-21

    申请号：US13284738

    申请日：2011-10-28

    申请人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

    发明人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

    IPC分类号： C23C16/455 ,  C23C16/453

    CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

    摘要： A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    摘要翻译： 气相沉积装置包括反应器，该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体，在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道，以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道，以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置，并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道（因此，供应通道）可以与常见的反应物源连接。 还描述了相关的沉积方法。