公开(公告)号：US09575383B2

公开(公告)日：2017-02-21

申请号：US15155535

申请日：2016-05-16

Applicant: Japan Display Inc.

Inventor： Kazuhito Watanabe ,  Masakatsu Kitani

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1343

CPC classification number: G02F1/136204 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133519 ,  G02F2202/104

Abstract: A first semiconductor layer is formed in the shape of an island in an active area displaying images on an array substrate. A second semiconductor layer is formed in the shape of an island outside the active area. A first insulating film covers the first and second semiconductor layers. A gate line is formed on the first insulating film and extends in a first direction. The gate line includes a gate electrode crossing the first semiconductor layer and a crossing portion crossing the second semiconductor layer. A second insulating film covers the gate line. A source line is formed on the second insulating film and extends in a second direction. The source line includes a source electrode contacting with the first semiconductor layer. A drain electrode is formed on the second insulating film apart from the source line and contacting with the first semiconductor layer.

Abstract translation: 在显示阵列基板上的图像的有源区域中形成岛状的第一半导体层。 第二半导体层形成为有源区域外的岛状。 第一绝缘膜覆盖第一和第二半导体层。 栅极线形成在第一绝缘膜上并沿第一方向延伸。 栅极线包括与第一半导体层交叉的栅电极和与第二半导体层交叉的交叉部。 第二绝缘膜覆盖栅极线。 源极线形成在第二绝缘膜上并沿第二方向延伸。 源极线包括与第一半导体层接触的源电极。 漏极电极形成在与源极线分开的第二绝缘膜上并与第一半导体层接触。

公开(公告)号：US09360720B2

公开(公告)日：2016-06-07

申请号：US13935875

申请日：2013-07-05

Applicant: Japan Display Inc.

Inventor： Kazuhito Watanabe ,  Masakatsu Kitani

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/136204 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133519 ,  G02F2202/104

Abstract: A first semiconductor layer is formed in the shape of an island in an active area displaying images on an array substrate. A second semiconductor layer is formed in the shape of an island outside the active area. A first insulating film covers the first and second semiconductor layers. A gate line is formed on the first insulating film and extends in a first direction. The gate line includes a gate electrode crossing the first semiconductor layer and a crossing portion crossing the second semiconductor layer. A second insulating film covers the gate line. A source line is formed on the second insulating film and extends in a second direction. The source line includes a source electrode contacting with the first semiconductor layer. A drain electrode is formed on the second insulating film apart from the source line and contacting with the first semiconductor layer.

Abstract translation: 在显示阵列基板上的图像的有源区域中形成岛状的第一半导体层。 第二半导体层形成为有源区域外的岛状。 第一绝缘膜覆盖第一和第二半导体层。 栅极线形成在第一绝缘膜上并沿第一方向延伸。 栅极线包括与第一半导体层交叉的栅电极和与第二半导体层交叉的交叉部。 第二绝缘膜覆盖栅极线。 源极线形成在第二绝缘膜上并沿第二方向延伸。 源极线包括与第一半导体层接触的源电极。 漏极电极形成在与源极线分开的第二绝缘膜上并与第一半导体层接触。