公开(公告)号：US12166135B2

公开(公告)日：2024-12-10

申请号：US18346927

申请日：2023-07-05

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US11742430B2

公开(公告)日：2023-08-29

申请号：US17347630

申请日：2021-06-15

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US11063154B2

公开(公告)日：2021-07-13

申请号：US15649126

申请日：2017-07-13

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20180026138A1

公开(公告)日：2018-01-25

申请号：US15649126

申请日：2017-07-13

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L29/40 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.