公开(公告)号：US12166135B2

公开(公告)日：2024-12-10

申请号：US18346927

申请日：2023-07-05

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US09947795B2

公开(公告)日：2018-04-17

申请号：US15388720

申请日：2016-12-22

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ariyoshi ,  Akihiro Hanada

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L29/78606 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.

公开(公告)号：US11742430B2

公开(公告)日：2023-08-29

申请号：US17347630

申请日：2021-06-15

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US11063154B2

公开(公告)日：2021-07-13

申请号：US15649126

申请日：2017-07-13

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20180026138A1

公开(公告)日：2018-01-25

申请号：US15649126

申请日：2017-07-13

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC: H01L29/786 ,  H01L29/40 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US09337440B2

公开(公告)日：2016-05-10

申请号：US14155392

申请日：2014-01-15

Applicant: Japan Display Inc.

Inventor： Tomoyuki Ariyoshi ,  Naoki Tokuda ,  Toshihiro Sato

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5218 ,  H01L27/3244 ,  H01L2251/5315

Abstract: An organic luminescent display device according to the invention includes: an element substrate; an organic film; and an organic electro luminescent element formed on the organic film. The organic electro luminescent element includes: an anode formed on the organic film; a light emitting layer formed on the anode; and a cathode formed on the light emitting layer. The anode includes: an adhesion layer formed in contact with an upper surface of the organic film; a reflection layer and formed in contact with an upper surface of the adhesion layer; and a light transmitting contact layer formed on the reflection layer. An edge portion of an outer periphery of the adhesion layer is positioned outside an edge portion of an outer periphery of the reflection layer as viewed in a plan view.

Abstract translation: 根据本发明的有机发光显示装置包括：元件基板; 有机膜; 和形成在有机膜上的有机电致发光元件。 有机电致发光元件包括：形成在有机膜上的阳极; 形成在阳极上的发光层; 和形成在发光层上的阴极。 阳极包括：与有机膜的上表面接触形成的粘合层; 反射层，形成为与粘合层的上表面接触; 以及形成在反射层上的透光接触层。 粘合层的外周的边缘部分在俯视图中位于反射层外周边缘部分的外侧。