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公开(公告)号:US11823636B2
公开(公告)日:2023-11-21
申请号:US17525347
申请日:2021-11-12
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii
IPC: G09G3/36 , G09G3/3266 , H01L27/12 , G09G3/3258 , H01L29/786
CPC classification number: G09G3/36 , G09G3/3258 , G09G3/3266 , G09G3/3614 , G09G3/3648 , G09G3/3674 , H01L27/124 , H01L27/1214 , G09G2300/0842 , G09G2300/0866 , G09G2310/0286 , G09G2310/08 , G09G2320/0214 , G09G2320/0247 , H01L29/78648
Abstract: A display device includes a display unit including a plurality of pixels, a first drive circuit supplying a gate voltage to drive the plurality of pixels, a gate line connected to the plurality of pixels and the first drive circuit, the gate line transmitting the gate voltage to the plurality of pixels, a second drive circuit supplying a drive voltage corresponding to a luminance of each of the plurality of pixels, a data line connected to the plurality of pixels and the second drive circuit, the data line transmitting the drive voltage to the plurality of pixels, a back gate circuit generating a back gate voltage having a reverse polarity of the gate voltage, and a back gate line extending parallel to the gate line, the back gate line transmitting the back gate voltage to the plurality of pixels.
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公开(公告)号:US10964728B2
公开(公告)日:2021-03-30
申请号:US16851663
申请日:2020-04-17
Applicant: Japan Display Inc.
Inventor: Koji Yamamoto , Tatsuya Ishii
IPC: G09G5/00 , H01L27/12 , G09G3/36 , H01L29/786 , H01L27/02 , G09G3/3266
Abstract: To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.
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公开(公告)号:US09941306B2
公开(公告)日:2018-04-10
申请号:US15333377
申请日:2016-10-25
Applicant: Japan Display Inc.
Inventor: Koji Yamamoto , Tatsuya Ishii
IPC: G09G5/00 , H01L27/12 , G09G3/3266 , G09G3/36 , H01L27/02 , H01L29/786
CPC classification number: H01L27/1244 , G09G3/3266 , G09G3/3648 , G09G3/3677 , G09G3/3696 , G09G2310/0286 , G09G2330/04 , H01L27/0255 , H01L29/78633 , H01L29/78648
Abstract: To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.
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公开(公告)号:US09658505B2
公开(公告)日:2017-05-23
申请号:US14688356
申请日:2015-04-16
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii , Tetsuya Iizuka
IPC: G02F1/1362 , H01L27/12 , H01L29/786
CPC classification number: G02F1/136209 , H01L27/1222 , H01L27/124 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675
Abstract: A display device includes an insulating substrate, a semiconductor layer formed of polycrystalline silicon, including a first impurity area, a second impurity area, and a channel area, an insulating film which covers the semiconductor layer, a gate electrode formed on the insulating film and opposed to the channel area, a source line electrically connected to the first impurity area, an electrode electrically connected to the second impurity area, and a light-shielding film located between the insulating substrate and the semiconductor layer, disposed at a position displaced from a position opposed to the source line, and opposed to an area including a boundary between the channel area and the second impurity area.
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公开(公告)号:US11545102B2
公开(公告)日:2023-01-03
申请号:US17212576
申请日:2021-03-25
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii
Abstract: According to an aspect, a display device includes a plurality of sub-pixels. Each of the sub-pixels includes a memory block including a memory configured to store therein sub-pixel data and a sub-pixel electrode coupled to the memory block. The memory includes first and second transistors configured to store therein the sub-pixel data in accordance with an electrical charge of a floating gate, the first and second transistors include respective drains that are coupled to each other, and a coupling point of the drains is coupled to a node. The sub-pixel electrode is coupled to the node, and each of the sub-pixels is configured to display an image based on a potential of the node.
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公开(公告)号:US11043163B2
公开(公告)日:2021-06-22
申请号:US16357482
申请日:2019-03-19
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii
IPC: G09G3/3225 , H01L27/32
Abstract: According to an aspect, a display device includes a plurality of sub-pixels arranged in a row direction and a column direction, and each including a memory block that has at least one memory configured to store sub-pixel data. The at least one memory includes: a first transistor including a first floating gate and configured to store the sub-pixel data based on an electric charge in the first floating gate; and a second transistor including a second floating gate electrically coupled to the first floating gate of the first transistor, one of a drain and a source of the second transistor being coupled to a power supply potential, the other of the drain and the source being coupled to a node. Each of the sub-pixels is configured to display an image based on a potential of the node.
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公开(公告)号:US09911759B2
公开(公告)日:2018-03-06
申请号:US15201809
申请日:2016-07-05
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii
IPC: H01L21/00 , H01L27/12 , H01L29/786
CPC classification number: H01L27/124 , H01L27/1222 , H01L27/1248 , H01L29/78618 , H01L29/78645
Abstract: According to one embodiment, a semiconductor device includes first and second gate electrodes, a semiconductor layer, an output electrode, and an insulating layer. The semiconductor layer includes first source and drain areas, a first channel area facing the first gate electrode, second source and drain areas, and a second channel area facing the second gate electrode. The output electrode outputs voltage produced in the first and second drain areas. In the semiconductor device, the first drain area is in contact with the second drain area. The insulating layer includes a hole portion communicating with one of the first and second drain areas. The output electrode is in contact with one of the first and second drain areas via the hole portion.
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公开(公告)号:US20190295464A1
公开(公告)日:2019-09-26
申请号:US16357482
申请日:2019-03-19
Applicant: Japan Display Inc.
Inventor: Tatsuya Ishii
IPC: G09G3/3225 , H01L27/32
Abstract: According to an aspect, a display device includes a plurality of sub-pixels arranged in a row direction and a column direction, and each including a memory block that has at least one memory configured to store sub-pixel data. The at least one memory includes: a first transistor including a first floating gate and configured to store the sub-pixel data based on an electric charge in the first floating gate; and a second transistor including a second floating gate electrically coupled to the first floating gate of the first transistor, one of a drain and a source of the second transistor being coupled to a power supply potential, the other of the drain and the source being coupled to a node. Each of the sub-pixels is configured to display an image based on a potential of the node.
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公开(公告)号:US11967600B2
公开(公告)日:2024-04-23
申请号:US18085633
申请日:2022-12-21
Applicant: Japan Display Inc.
Inventor: Koji Yamamoto , Tatsuya Ishii
IPC: H01L27/12 , G09G3/3266 , G09G3/36 , H01L27/02 , H01L29/786
CPC classification number: H01L27/1244 , G09G3/3266 , G09G3/3648 , G09G3/3677 , G09G3/3696 , H01L27/0255 , H01L27/0266 , H01L27/124 , H01L29/78633 , H01L29/78645 , H01L29/78648 , G09G2310/0286 , G09G2330/04
Abstract: To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.
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公开(公告)号:US11563039B2
公开(公告)日:2023-01-24
申请号:US17671709
申请日:2022-02-15
Applicant: Japan Display Inc.
Inventor: Koji Yamamoto , Tatsuya Ishii
IPC: G09G5/00 , H01L27/12 , G09G3/36 , H01L29/786 , H01L27/02 , G09G3/3266
Abstract: To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.
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