公开(公告)号：US08911551B2

公开(公告)日：2014-12-16

申请号：US13196179

申请日：2011-08-02

申请人： Jason Chen ,  Nakano Liu ,  Winson Shao ,  Wen Chu ,  Chang-Hwang Hua

发明人： Jason Chen ,  Nakano Liu ,  Winson Shao ,  Wen Chu ,  Chang-Hwang Hua

IPC分类号： B05C11/00 ,  C23C18/16 ,  H01L21/768 ,  H01L21/288

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1666 ,  C23C18/1669 ,  H01L21/76843

摘要： An electroless plating apparatus and method designed specifically for plating at least one semiconductor wafer are disclosed. The apparatus comprises a container, a wafer holder, an electrolyte supplying unit, and an ultrasonic-vibration unit. The container is provided with at least an inlet and used for containing electrolyte. The wafer holder is provided within the container. The electrolyte supplying unit is used to supply the electrolyte into the container via the inlet. The ultrasonic-vibration unit consisting of at least one frequency ultrasonic transducer is disposed in the container for producing a uniform flow of electrolyte in the container. Thereby, the wafers can be uniformly plated, especially for wafers with fine via-holes or trench structures.

摘要翻译： 公开了专门用于电镀至少一个半导体晶片的化学镀设备和方法。 该装置包括容器，晶片保持器，电解质供给单元和超声波振动单元。 容器设有至少一个入口并用于容纳电解质。 晶片保持器设置在容器内。 电解质供给单元用于经由入口将电解质供给到容器中。 由至少一个频率超声波换能器组成的超声波振动单元设置在容器中，用于在容器中产生均匀的电解液流。 因此，可以均匀地镀覆晶片，特别是对于具有精细通孔或沟槽结构的晶片。

公开(公告)号：US20130034959A1

公开(公告)日：2013-02-07

申请号：US13196179

申请日：2011-08-02

申请人： Jason CHEN ,  Nakano Liu ,  Winson Shao ,  Wen Chu ,  Chang-Hwang Hua

发明人： Jason CHEN ,  Nakano Liu ,  Winson Shao ,  Wen Chu ,  Chang-Hwang Hua

IPC分类号： H01L21/3205 ,  B05C11/10 ,  B05C11/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1666 ,  C23C18/1669 ,  H01L21/76843

摘要： An electroless plating apparatus and method designed specifically for plating at least one semiconductor wafer are disclosed. The apparatus comprises a container, a wafer holder, an electrolyte supplying unit, and an ultrasonic-vibration unit. The container is provided with at least an inlet and used for containing electrolyte. The wafer holder is provided within the container. The electrolyte supplying unit is used to supply the electrolyte into the container via the inlet. The ultrasonic-vibration unit consisting of at least one frequency ultrasonic transducer is disposed in the container for producing a uniform flow of electrolyte in the container. Thereby, the wafers can be uniformly plated, especially for wafers with fine via-holes or trench structures.

摘要翻译： 公开了专门用于电镀至少一个半导体晶片的化学镀设备和方法。 该装置包括容器，晶片保持器，电解质供给单元和超声波振动单元。 容器设有至少一个入口，用于容纳电解液。 晶片保持器设置在容器内。 电解质供给单元用于经由入口将电解质供给到容器中。 由至少一个频率超声波换能器组成的超声波振动单元设置在容器中，用于在容器中产生均匀的电解液流。 因此，可以均匀地镀覆晶片，特别是对于具有精细通孔或沟槽结构的晶片。