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1.发明授权
公开(公告)号：US4855912A
公开(公告)日：1989-08-08
申请号：US153130
申请日：1988-02-08
摘要： A method and apparatus for investigating earth formations surrounding a borehole operates by selectively heating a region of the formations, and measuring the thermal response to obtain useful information concerning the characteristic length scales of the pores in the heated region. The thermal response is obtained indirectly by measuring the electrical conductivity response. The invention can be utilized to obtain, inter alia, indications of porosity, permeability, and the distribution of pore geometries. In accordance with an embodiment of the method of the invention, the following steps are performed: heating a region of the formations with a series of pulses of microwave electromagnetic energy; measuring the conductivity characteristic of the region which result from the heating pulses; and determining a property of the region of the formations from the measured conductivity characteristic. In the preferred embodiment of the invention, the conductivity characteristic is converted to conductivity as a function of frequency, and the desired property is determined from the conductivity as a function of frequency. The disclosed technique can also be used for studying the microgeometry of media such as core samples.
摘要翻译： 用于研究钻孔周围的地层的方法和装置通过选择性地加热地层的区域并测量热响应来获得关于加热区域中的孔的特征长度尺度的有用信息。 通过测量电导率反应间接获得热响应。 本发明可用于特别获得孔隙度，渗透性和孔几何形状分布的指示。 根据本发明的方法的一个实施例，执行以下步骤：用微波电磁能的一系列脉冲加热地层的区域; 测量由加热脉冲产生的区域的导电特性; 以及根据测量的电导率特性确定地层的区域的性质。 在本发明的优选实施例中，电导率特性被转换为作为频率的函数的电导率，并且根据作为频率的函数的电导率确定期望的性质。 所公开的技术也可以用于研究诸如核心样品的介质的微观几何学。
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2.发明授权
公开(公告)号：US4703277A
公开(公告)日：1987-10-27
申请号：US599888
申请日：1984-04-13
摘要： Well logging techniques are disclosed which use and/or measure formation textural parameters. A disclosed formation textural model is bimodal in nature, and includes fractions of spherical grains and of platey grains having a single aspect ratio. This model is used in obtaining improved well logging recordings.
摘要翻译： 公开了使用和/或测量形成结构参数的测井技术。 所公开的地层纹理模型本质上是双峰的，并且包括具有单一纵横比的球形颗粒和板状颗粒的分数。 该模型用于获得改进的测井记录。
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公开(公告)号：US4167791A
公开(公告)日：1979-09-11
申请号：US872303
申请日：1978-01-25
IPC分类号： G11C17/00 , G11C11/42 , G11C11/44 , G11C11/56 , G11C13/04 , G11C17/06 , G11C17/16 , G11C11/40
CPC分类号： G11C7/04 , G11C11/44 , G11C11/56 , G11C11/5692 , G11C13/047 , G11C17/06 , G11C17/16
摘要： A semiconductor memory device exhibiting non-volatile storage characteristics is disclosed. The device comprises a storage element, maintained in a prescribed range of temperatures, which exhibits an effect of charge storage and release of the stored charge upon application of a suitable bias voltage. Information is stored by exposure to light or by applying a suitable bias voltage to put the device into one of a multiplicity of long-lived states. In the case of exposure to light the state of the device is indicative of the integrated photon flux. Information can be stored or read out in times as short as 1 nanosecond or less and will remain stored for as long as 10.sup.5 seconds or longer without any sustaining voltage. A plurality of the memory devices can be interconnected in an array and can be used as a memory storage bank.
摘要翻译： 公开了具有非易失性存储特性的半导体存储器件。 该装置包括保持在规定温度范围内的存储元件，其在施加合适的偏置电压时具有电荷存储和释放所存储的电荷的效果。 通过曝光或通过施加合适的偏置电压来存储信息以将器件置于多种长寿命状态之一。 在曝光的情况下，器件的状态表示积分光子通量。 信息可以在短至1毫微秒或更短的时间内存储或读出，并保持长达105秒或更长时间，无任何持续电压。 多个存储器件可以以阵列方式互连并且可以用作存储器存储体。
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