公开(公告)号：US20090022622A1

公开(公告)日：2009-01-22

申请号：US11395360

申请日：2006-04-03

申请人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

发明人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

IPC分类号： C22C21/00

CPC分类号： C23C14/3414 ,  C03C17/09 ,  C03C2217/27 ,  C03C2218/154 ,  C22C21/00

摘要： A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element is selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

摘要翻译： 提供了用于制造平板显示器的物理气相沉积靶。 目标包括以原子百分数计含量为约90至99.98的第一组分的三元合金体系，其中第一组分为铝，第二组分的量为约0.01至2.0，其中第二组分为 稀土元素选自Nd，Ce，Dy和Gd，第三成分选自约0.01〜8.0，其中第三元素选自Ni，Co，Mo，Sc， 和Hf。

公开(公告)号：US08097100B2

公开(公告)日：2012-01-17

申请号：US11395360

申请日：2006-04-03

申请人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

发明人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

IPC分类号： C22C21/00

CPC分类号： C23C14/3414 ,  C03C17/09 ,  C03C2217/27 ,  C03C2218/154 ,  C22C21/00

摘要： A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

摘要翻译： 提供了用于制造平板显示器的物理气相沉积靶。 目标包括以原子百分数计含量为约90至99.98的第一组分的三元合金体系，其中第一组分为铝，第二组分的量为约0.01至2.0，其中第二组分为 选自Nd，Ce，Dy和Gd的稀土元素，以及约0.01至8.0的第三组分，其中第三元素选自Ni，Co，Mo，Sc和 Hf。

公开(公告)号：US20150315696A1

公开(公告)日：2015-11-05

申请号：US14266975

申请日：2014-05-01

申请人： Wendell R. Stuber ,  Ernesto Aviles ,  Jaydeep Sarkar ,  Paul S. Gilman

发明人： Wendell R. Stuber ,  Ernesto Aviles ,  Jaydeep Sarkar ,  Paul S. Gilman

IPC分类号： C23C14/14 ,  C23C14/24 ,  B21C1/00 ,  B24B39/00 ,  B21C47/02 ,  C22B3/00 ,  C22C5/02

CPC分类号： C22C5/02 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  B21C1/00 ,  B21C1/003 ,  B21C47/02 ,  B24B31/06 ,  B24B39/00 ,  C22B9/14 ,  C22B11/04 ,  C23C14/14 ,  C23C14/24 ,  C23C14/564 ,  C23G1/10

摘要： A unique sequence of steps is provided to reduce contaminants along one or more surfaces and faces of gold evaporative sources without deleteriously impacting the structure of the gold evaporative sources. Edges are deburred; contaminants are successfully removed therealong; and surface smoothness is substantially retained. The resultant gold evaporative source is suitable for use in evaporative processes as a precursor to gold film deposition without the occurrence or a substantial reduction in the likelihood of spitting by virtue of significantly reduced levels of contaminants, in comparison to gold evaporative sources subject to a standard cleaning protocol.

摘要翻译： 提供了独特的步骤顺序，以减少金蒸发源的一个或多个表面和面的污染物，而不会有害地影响金蒸发源的结构。 边缘被去毛刺; 污染物成功地沿着它移除; 并且基本保持表面平滑度。 所得到的金蒸发源适用于作为金膜沉积的前体的蒸发过程中，与通过标准的金蒸发源相比，由于显着降低的污染物水平而不发生或显着降低了吐出的可能性 清洁方案。

公开(公告)号：US09802233B2

公开(公告)日：2017-10-31

申请号：US14266975

申请日：2014-05-01

申请人： Wendell R. Stuber ,  Ernesto Aviles ,  Jaydeep Sarkar ,  Paul S. Gilman

发明人： Wendell R. Stuber ,  Ernesto Aviles ,  Jaydeep Sarkar ,  Paul S. Gilman

IPC分类号： B21C1/00 ,  C22B3/00 ,  C23C14/24 ,  B21C47/02 ,  B08B3/08 ,  B08B3/12 ,  B08B3/10 ,  B24B39/00 ,  C23C14/14 ,  C23C14/56 ,  C22C5/02 ,  C23G1/10 ,  C22B9/14 ,  B24B31/06

CPC分类号： C22C5/02 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  B21C1/00 ,  B21C1/003 ,  B21C47/02 ,  B24B31/06 ,  B24B39/00 ,  C22B9/14 ,  C22B11/04 ,  C23C14/14 ,  C23C14/24 ,  C23C14/564 ,  C23G1/10

摘要： A unique sequence of steps is provided to reduce contaminants along one or more surfaces and faces of gold evaporative sources without deleteriously impacting the structure of the gold evaporative sources. Edges are deburred; contaminants are successfully removed therealong; and surface smoothness is substantially retained. The resultant gold evaporative source is suitable for use in evaporative processes as a precursor to gold film deposition without the occurrence or a substantial reduction in the likelihood of spitting by virtue of significantly reduced levels of contaminants, in comparison to gold evaporative sources subject to a standard cleaning protocol.

公开(公告)号：US20080121516A1

公开(公告)日：2008-05-29

申请号：US11605406

申请日：2006-11-29

申请人： Jaydeep Sarkar ,  Peter McDonald ,  Paul S. Gilman

发明人： Jaydeep Sarkar ,  Peter McDonald ,  Paul S. Gilman

IPC分类号： C23C14/02

CPC分类号： C23C14/3407

摘要： A method for dry treating a sputter target using a plasma to significantly reduce burn-in time of the target by removing surface contaminants and also a minimal thickness of the deformed layer characteristics of a machined surface, the target so produced, and apparatus used for the target treatment.

摘要翻译： 使用等离子体对溅射靶进行干式处理的方法，通过去除表面污染物并显着减少加工表面的变形层特性的最小厚度，如此制造的靶，以及用于 目标治疗。

公开(公告)号：US09761420B2

公开(公告)日：2017-09-12

申请号：US14105589

申请日：2013-12-13

申请人： Jaydeep Sarkar ,  Paul Gilman

发明人： Jaydeep Sarkar ,  Paul Gilman

IPC分类号： C23C14/00 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/34 ,  H01J37/3435

摘要： The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.

公开(公告)号：US20150170889A1

公开(公告)日：2015-06-18

申请号：US14105589

申请日：2013-12-13

申请人： Jaydeep Sarkar ,  Paul Gilman

发明人： Jaydeep Sarkar ,  Paul Gilman

IPC分类号： H01J37/34

CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/34 ,  H01J37/3435

摘要： The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.

摘要翻译： 本发明涉及Cu纯度为99.9999％（6N）以上的新颖且改进的高纯度扩散接合铜（Cu）溅射靶。 本发明的目标组件表现出足够的粘合强度和微观结构均匀性，这两者都是先前被认为是传统的6N Cu靶组件相互排斥的特性。 晶粒结构的特征在于不存在合金元素，并且结合界面通常是平坦的，没有任何类型的中间层或互锁装置。