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    Ternary aluminum alloy films and targets for manufacturing flat panel displays
    1.
    发明申请
    Ternary aluminum alloy films and targets for manufacturing flat panel displays 有权
    三元铝合金薄膜和制造平板显示器的目标

    公开(公告)号：US20090022622A1

    公开(公告)日：2009-01-22

    申请号：US11395360

    申请日：2006-04-03

    申请人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

    发明人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

    IPC分类号： C22C21/00

    CPC分类号： C23C14/3414 ,  C03C17/09 ,  C03C2217/27 ,  C03C2218/154 ,  C22C21/00

    摘要： A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element is selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

    摘要翻译： 提供了用于制造平板显示器的物理气相沉积靶。 目标包括以原子百分数计含量为约90至99.98的第一组分的三元合金体系，其中第一组分为铝，第二组分的量为约0.01至2.0，其中第二组分为 稀土元素选自Nd，Ce，Dy和Gd，第三成分选自约0.01〜8.0，其中第三元素选自Ni，Co，Mo，Sc， 和Hf。

    Ternary aluminum alloy films and targets for manufacturing flat panel displays
    2.
    发明授权
    Ternary aluminum alloy films and targets for manufacturing flat panel displays 有权
    三元铝合金薄膜和制造平板显示器的目标

    公开(公告)号：US08097100B2

    公开(公告)日：2012-01-17

    申请号：US11395360

    申请日：2006-04-03

    申请人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

    发明人： Jaydeep Sarkar ,  Chi-Fung Lo ,  Paul S. Gilman

    IPC分类号： C22C21/00

    CPC分类号： C23C14/3414 ,  C03C17/09 ,  C03C2217/27 ,  C03C2218/154 ,  C22C21/00

    摘要： A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

    摘要翻译： 提供了用于制造平板显示器的物理气相沉积靶。 目标包括以原子百分数计含量为约90至99.98的第一组分的三元合金体系，其中第一组分为铝，第二组分的量为约0.01至2.0，其中第二组分为 选自Nd，Ce，Dy和Gd的稀土元素，以及约0.01至8.0的第三组分，其中第三元素选自Ni，Co，Mo，Sc和 Hf。

    Manufacturing of high density intermetallic sputter targets
    3.
    发明授权
    Manufacturing of high density intermetallic sputter targets 有权
    制造高密度金属间溅射靶

    公开(公告)号：US6042777A

    公开(公告)日：2000-03-28

    申请号：US366453

    申请日：1999-08-03

    申请人： Chi-Fung Lo ,  Darryl Draper ,  Hung-Lee Hoo ,  Paul S. Gilman

    发明人： Chi-Fung Lo ,  Darryl Draper ,  Hung-Lee Hoo ,  Paul S. Gilman

    IPC分类号： B22F3/15 ,  C22C1/04 ,  C23C14/34 ,  B22F3/12 ,  B22F7/04

    CPC分类号： C22C1/0491 ,  C23C14/3414 ,  B22F2998/10

    摘要： There is provided a method for fabricating intermetallic sputter targets of two or more elements in which a mixture of two or more elemental powders are blended and synthesized within a pressing apparatus at a temperature below the melting point of the lowest melting point element in the mixture, followed by heating the synthesized intermetallic powder in the pressing apparatus to a temperature below the melting point of the intermetallic structure while simultaneously applying pressure to the powder to achieve a final density greater than 90% of theoretical density. The powder metallurgy technique of the present invention provides a better microstructure than cast structures, and avoids contamination of the sputter target by eliminating the crushing step of synthesized intermetallic chunks necessitated by separate steps of synthesizing and pressing.

    摘要翻译： 提供了一种用于制造两种或更多种元素的金属间溅射靶的方法，其中将两种或更多种元素粉末的混合物在压制装置内在低于混合物中最低熔点元素的熔点的温度下混合并合成， 然后将压制装置中合成的金属间化合物加热到低于金属间结构熔点的温度，同时向粉末施加压力以达到理论密度的90％以上的最终密度。 本发明的粉末冶金技术提供比铸造结构更好的微观结构，并且通过消除合成和压制的单独步骤所需的合成金属间块的破碎步骤来避免溅射靶的污染。

    Method of making high-density, high-purity tungsten sputter targets
    4.
    发明授权
    Method of making high-density, high-purity tungsten sputter targets 失效
    制造高密度，高纯度钨溅射靶的方法

    公开(公告)号：US06328927B1

    公开(公告)日：2001-12-11

    申请号：US09220906

    申请日：1998-12-24

    申请人： Chi-Fung Lo ,  Paul S. Gilman ,  Darryl Draper

    发明人： Chi-Fung Lo ,  Paul S. Gilman ,  Darryl Draper

    IPC分类号： B22F314

    CPC分类号： C22C1/045 ,  B22F2998/10 ,  B22F3/1216 ,  B22F3/15

    摘要： A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less than about 50 &mgr;m and an oxygen content less than about 500 ppm is hot-isostatic pressed at a temperature of about 1200° C. to about 1600° C. and a pressure of at least about 15 ksi for at least about 3 hours. A high-purity sputter target is further achieved by using a tungsten starting powder having a purity higher than about 99.999%.

    摘要翻译： 提供了一种用于制造具有至少约97％理论密度的密度并且氧含量低于起始粉末至少约100ppm的钨溅射靶的方法。 根据本发明的原理，粉末尺寸小于约50μm，氧含量小于约500ppm的钨粉在约1200℃至约1600℃的温度下进行热等静压。 和至少约15ksi的压力至少约3小时。 通过使用纯度高于约99.999％的钨起始粉末进一步实现高纯度溅射靶。

    Contoured sputtering target
    5.
    发明授权
    Contoured sputtering target 失效
    轮廓溅射靶

    公开(公告)号：US6086735A

    公开(公告)日：2000-07-11

    申请号：US88454

    申请日：1998-06-01

    申请人： Paul S. Gilman ,  Tetsuya Kojima ,  Chi-Fung Lo ,  Eiichi Shimizu ,  Hidemasa Tamura ,  Norio Yokoyama

    发明人： Paul S. Gilman ,  Tetsuya Kojima ,  Chi-Fung Lo ,  Eiichi Shimizu ,  Hidemasa Tamura ,  Norio Yokoyama

    IPC分类号： B23P13/04 ,  C23C14/34

    CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/3491

    摘要： A contoured sputtering target includes a target member of sputtering material having a top surface, a bottom surface and an outer peripheral surface. One or more contoured annular regions are formed on the top surface of the target member that extend radially inwardly from the outer peripheral surface and away from the bottom surface. The target member may further include planar, concave or central recessed regions formed in the top surface that are surrounded by the one or more contoured annular regions. The configuration of the target member reduces generation of contaminating particles from nodules that may form near the outer peripheral surface of the target during a sputtering operation. Methods of forming a contoured sputtering target are also disclosed.

    摘要翻译： 成像溅射靶包括具有顶表面，底表面和外周表面的溅射材料的目标构件。 一个或多个轮廓环形区域形成在目标构件的顶表面上，其从外周表面径向向内延伸并远离底表面。 目标构件还可以包括形成在顶表面中的由一个或多个轮廓环形区域包围的平面，凹形或中心凹陷区域。 目标构件的构造在溅射操作期间减少可能在靶的外周表面附近形成的结节的污染颗粒的产生。 还公开了形成轮廓的溅射靶的方法。

    Cryogenic annealing of sputtering targets
    6.
    发明授权
    Cryogenic annealing of sputtering targets 失效
    溅射靶的低温退火

    公开(公告)号：US6056857A

    公开(公告)日：2000-05-02

    申请号：US910334

    申请日：1997-08-13

    申请人： Thomas J. Hunt ,  Paul S. Gilman ,  James E. Joyce ,  Chi-Fung Lo ,  Darryl Draper

    发明人： Thomas J. Hunt ,  Paul S. Gilman ,  James E. Joyce ,  Chi-Fung Lo ,  Darryl Draper

    IPC分类号： C23C14/34 ,  C23C14/56

    CPC分类号： C23C14/564 ,  C23C14/3414

    摘要： Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.

    摘要翻译： 溅射靶被低温退火以通过将靶放置在温度控制的低温室中并以受控的速率将腔室冷却至低温温度来提供均匀致密的分子结构。 目标物保持在低温温度以对靶进行低温退火，并且靶物随后返回到环境温度或升高的温度。 利用低温退火靶物可实现溅射粒子性能和早期寿命膜均匀性的提高。