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公开(公告)号：US4999696A
公开(公告)日：1991-03-12
申请号：US298201
申请日：1989-01-17
IPC分类号： H01L31/10 , H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.30 doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (b 12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.+ zone located in the layer of indium phosphide (InP) (11) along the circumference of the MESA structure.
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公开(公告)号：US4904608A
公开(公告)日：1990-02-27
申请号：US297821
申请日：1989-01-17
IPC分类号： H01L31/10 , H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.+ doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.+ zone located in the layer of indium phosphide (InP) (11) along the circumference of the MESA structure.
摘要翻译： 具有低泄漏电流的PIN光电二极管包括磷化铟（InP）的衬底（10），其是n +掺杂的，并且其第一表面形成为掺杂的磷化铟（InP）层（11），并且其上 设置由掺杂砷化镓（InGaAs）的层（12）形成的MESA结构，并且还由在表面处形成的p +型的层（13,113,213），在边缘 并沿着MESA结构的圆周。 该结构还包括形成在衬底的第二表面上的金属触点（22）和形成在p +层的一部分上的欧姆接触（21）。 本发明的特征在于，磷化铟层（InP）（11）的n掺杂选择为低于砷化镓砷（InGaAs）（12）的n掺杂，并且因为 欧姆接触（21）沿着MESA结构的圆周形成在位于磷化铟（InP）（11）层中的p +区的部分（213）上。
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