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公开(公告)号：US06944437B2
公开(公告)日：2005-09-13
申请号：US10705252
申请日：2003-11-10
申请人： Jeffrey Ming-Jer Yang , Matt Nishimoto , Xing Lan , Michael Battung , Robert Wang , Yun-Ho Chung
发明人： Jeffrey Ming-Jer Yang , Matt Nishimoto , Xing Lan , Michael Battung , Robert Wang , Yun-Ho Chung
CPC分类号： H03F3/72 , H03C3/40 , H03F1/0277 , H03F3/211 , H03F2200/372
摘要： An electronically programmable multimode circuit is described. More particularly, the present invention is an electronically programmable multimode circuit that includes a first path and a second path wherein a mode and a signal directional flow direction is controlled through the selective biasing of the first path and the second path. A multimode circuit is produced that contains modes such as a phase shifter mode, an IQ modulation mode, an amplifier mode, a mixer mode, and a multiplier mode.
摘要翻译： 描述了一种电子可编程多模电路。 更具体地，本发明是一种电子可编程多模电路，其包括第一路径和第二路径，其中通过第一路径和第二路径的选择性偏置来控制模式和信号方向流动方向。 产生包含移相器模式，IQ调制模式，放大器模式，混频器模式和乘法器模式的模式的多模电路。
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公开(公告)号：US07239852B2
公开(公告)日：2007-07-03
申请号：US10632683
申请日：2003-08-01
IPC分类号： H04B1/44
CPC分类号： H03F1/56 , H03F3/193 , H03F3/62 , H03F2200/222 , H03F2200/372 , H03F2200/387 , H03F2200/451 , H04B1/44
摘要： A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.
摘要翻译： 描述了一种常见的源双向微波放大器。 更具体地，本发明是一种微波公共源双向放大器，其包括第一放大路径和第二放大路径，其中通过第一放大路径和第二放大路径的选择性偏置来控制信号定向流。 每个放大路径被设计为优化所需的性能。 对于通过第一放大路径的信号流，第一放大路径被偏置，并且第二路径被偏置。 对于通过第二放大路径的信号流，第二放大路径被偏置，并且第一路径被偏置。
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公开(公告)号：US20050099222A1
公开(公告)日：2005-05-12
申请号：US10705252
申请日：2003-11-10
申请人： Jeffrey Yang , Matt Nishimoto , Xing Lan , Michael Battung , Robert Wang , Yun-Ho Chung
发明人： Jeffrey Yang , Matt Nishimoto , Xing Lan , Michael Battung , Robert Wang , Yun-Ho Chung
CPC分类号： H03F3/72 , H03C3/40 , H03F1/0277 , H03F3/211 , H03F2200/372
摘要： An electronically programmable multimode circuit is described. More particularly, the present invention is an electronically programmable multimode circuit that includes a first path and a second path wherein a mode and a signal directional flow direction is controlled through the selective biasing of the first path and the second path. A multimode circuit is produced that contains modes such as a phase shifter mode, an IQ modulation mode, an amplifier mode, a mixer mode, and a multiplier mode.
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公开(公告)号：US20050026571A1
公开(公告)日：2005-02-03
申请号：US10632683
申请日：2003-08-01
申请人： Jeffrey Yang , Matt Nishimoto , Yun-Ho Chung , Michael Battung , Richard Lai
发明人： Jeffrey Yang , Matt Nishimoto , Yun-Ho Chung , Michael Battung , Richard Lai
CPC分类号： H03F1/56 , H03F3/193 , H03F3/62 , H03F2200/222 , H03F2200/372 , H03F2200/387 , H03F2200/451 , H04B1/44
摘要： A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.
摘要翻译： 描述了一种常见的源双向微波放大器。 更具体地，本发明是一种微波公共源双向放大器，其包括第一放大路径和第二放大路径，其中通过第一放大路径和第二放大路径的选择性偏置来控制信号定向流。 每个放大路径被设计为优化所需的性能。 对于通过第一放大路径的信号流，第一放大路径被偏置，并且第二路径被偏置。 对于通过第二放大路径的信号流，第二放大路径被偏置，并且第一路径被偏置。
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5.发明授权公开(公告)号：US07498872B2
公开(公告)日：2009-03-03
申请号：US11413833
申请日：2006-04-28
IPC分类号： H01L29/00
CPC分类号： G06F17/5063
摘要： Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.
摘要翻译： 晶体管器件被配置为在高于典型的第一截止频率的频率下工作。 一方面，提供一种用于配置晶体管器件以在第一截止频率之上操作的方法。 该方法包括为与晶体管器件相关联的晶体管选择期望的工作频率范围和期望的输出功率，分析相位速度失配对多个不同尺寸晶体管的总体增益的影响，以及评估初级和次级增益区域 的多个不同尺寸的晶体管。 该方法还包括选择晶体管，其大小基于对相位速度失配和初级和次级增益区域的评估的分析，在等于或接近期望的工作频率范围提供期望的输出功率。
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公开(公告)号：US20070290326A1
公开(公告)日：2007-12-20
申请号：US11581851
申请日：2006-10-16
IPC分类号： H01L23/48
CPC分类号： H01L23/66 , H01L23/10 , H01L25/16 , H01L2223/6677 , H01L2924/0002 , H01L2924/01079 , H01L2924/1423 , H01Q1/2283 , H01Q3/30 , H01Q13/02 , H01L2924/00
摘要： An integrated packaging assembly for an MMIC that uses the semiconductor wafers on which circuit elements are fabricated as the package. The packaging assembly includes a plurality of semiconductor layers that have been diced from the semiconductor wafers, where the semiconductor layers can be made of different semiconductor material. The semiconductor layers define cavities therebetween in which circuit components are fabricated. A sealing ring seals the semiconductor layers together so as to hermetically seal the circuit components within the cavities.
摘要翻译： 一种用于MMIC的集成包装组件，其使用其上制造电路元件的半导体晶片作为封装。 包装组件包括已经从半导体晶片切割的多个半导体层，其中半导体层可以由不同的半导体材料制成。 半导体层在其间限定了空腔，其中制造了电路部件。 密封环将半导体层密封在一起，以便密封腔内的电路元件。
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7.发明申请公开(公告)号：US20070252643A1
公开(公告)日：2007-11-01
申请号：US11413833
申请日：2006-04-28
IPC分类号： H03F3/14
CPC分类号： G06F17/5063
摘要： Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.
摘要翻译： 晶体管器件被配置为在高于典型的第一截止频率的频率下工作。 一方面，提供一种用于配置晶体管器件以在第一截止频率之上操作的方法。 该方法包括为与晶体管器件相关联的晶体管选择期望的工作频率范围和期望的输出功率，分析相位速度失配对多个不同尺寸晶体管的总体增益的影响，以及评估初级和次级增益区域 的多个不同尺寸的晶体管。 该方法还包括选择晶体管，其大小基于对相位速度失配和初级和次级增益区域的评估的分析，在等于或接近期望的工作频率范围提供期望的输出功率。
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公开(公告)号：US07615863B2
公开(公告)日：2009-11-10
申请号：US11581851
申请日：2006-10-16
IPC分类号： H01L23/34
CPC分类号： H01L23/66 , H01L23/10 , H01L25/16 , H01L2223/6677 , H01L2924/0002 , H01L2924/01079 , H01L2924/1423 , H01Q1/2283 , H01Q3/30 , H01Q13/02 , H01L2924/00
摘要： An integrated packaging assembly for an MMIC that uses the semiconductor wafers on which circuit elements are fabricated as the package. The packaging assembly includes a plurality of semiconductor layers that have been diced from the semiconductor wafers, where the semiconductor layers can be made of different semiconductor material. The semiconductor layers define cavities therebetween in which circuit components are fabricated. A sealing ring seals the semiconductor layers together so as to hermetically seal the circuit components within the cavities.
摘要翻译： 一种用于MMIC的集成包装组件，其使用其上制造电路元件的半导体晶片作为封装。 包装组件包括已经从半导体晶片切割的多个半导体层，其中半导体层可以由不同的半导体材料制成。 半导体层在其间限定了空腔，其中制造了电路部件。 密封环将半导体层密封在一起，以便密封腔内的电路元件。
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公开(公告)号：USD935012S1
公开(公告)日：2021-11-02
申请号：US29732685
申请日：2020-04-27
申请人： Yun-Ho Chung , Shin-Hyan No
设计人： Yun-Ho Chung , Shin-Hyan No
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10.发明授权Asymmetric, voltage optimized, wideband common-gate bi-directional MMIC amplifier 有权不对称，电压优化，宽带共栅双向MMIC放大器公开(公告)号：US06657497B1
公开(公告)日：2003-12-02
申请号：US10160140
申请日：2002-05-30
申请人： Jeffrey M. Yang , Yun-Ho Chung , Matt Y. Nishimoto
发明人： Jeffrey M. Yang , Yun-Ho Chung , Matt Y. Nishimoto
IPC分类号： H03F316
CPC分类号： H03F3/607 , H03F1/08 , H03F1/56 , H03F3/62 , H03F2200/294 , H03F2200/372 , H03F2200/72
摘要： A bi-directional amplifier (10) for a transceiver module for amplifying both transmit signals and receive signals propagating in opposite directions. The amplifier (10) includes first and second common gate FETs (22, 24) electrically coupled along a common transmission line (20). A first variable matching network (28) is electrically coupled to the transmission line (20) between a transmit signal input port (12) and the first FET (22), and a second variable matching network (30) is electrically coupled to the transmission line (20) between a receive signal input port (14) and the second FET (24). An interstage variable matching network (32) is electrically coupled to the transmission line (20) between the first and second FETs (22, 24). A DC voltage regulator (34) provides a DC bias signal to the matching networks (28, 30, 32) and the FETs (22, 24) so that different signal amplifications and different impedance matching characteristics can be provided for the transmit signal and the receive signal.
摘要翻译： 一种用于收发器模块的双向放大器（10），用于放大发送信号和接收在相反方向上传播的信号。 放大器（10）包括沿着公共传输线（20）电耦合的第一和第二公共栅极FET（22,24）。 第一可变匹配网络（28）电耦合到发射信号输入端口（12）和第一FET（22）之间的传输线（20），并且第二可变匹配网络（30）电耦合到传输 在接收信号输入端口（14）和第二FET（24）之间的线路（20）。 级间变量匹配网络（32）电耦合到第一和第二FET（22,24）之间的传输线（20）。 直流电压调节器（34）向匹配网络（28,30,32）和FET（22,24）提供DC偏置信号，使得可以为发射信号提供不同的信号放大和不同的阻抗匹配特性， 接收信号。
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