公开(公告)号：US08377768B2

公开(公告)日：2013-02-19

申请号：US13293096

申请日：2011-11-09

申请人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

发明人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

IPC分类号： H01L21/8238

CPC分类号： H01L29/1083 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/518 ,  H01L29/66659 ,  H01L29/7835

摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.

摘要翻译： 一组高性能类似极性的绝缘栅场效应晶体管（100,108,112,116,120和124或102,110,114,118,122和126）具有可选择地不同的侧向源 /漏极延伸，光晕口和栅介质厚度，适用于为模拟和/或数字应用提供各种晶体管的半导体制造平台。 每个晶体管具有一对源极/漏极区，栅极介电层和栅电极。 每个源极/漏极区域包括主要部分和更轻掺杂的横向延伸部分。 一个晶体管的一个源极/漏极区域的横向延伸比另一个晶体管的源极/漏极区域之一的横向延伸更深地掺杂或/并且在上部半导体表面之下更深地延伸。

公开(公告)号：US08163619B2

公开(公告)日：2012-04-24

申请号：US12382967

申请日：2009-03-27

申请人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

发明人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

IPC分类号： H01L21/336

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66659

摘要： An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima at respective locations (PH-1-PH-3-NH-3) spaced apart from one another. This typically enables the transistor to have reduced current leakage.

摘要翻译： 沿着半导体主体的上表面设置非对称绝缘栅场效应晶体管（100U或102U），以便具有由沟道区横向隔开的第一和第二源/漏区（240和242或280和282） 244或284）晶体管的主体材料。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 比主体材料的横向相邻材料更重掺杂的主体材料的口袋部分（250或290）在很大程度上仅延伸到第一个S / D区域并进入通道区域。 口袋部分的垂直掺杂剂轮廓被调整为在彼此间隔开的相应位置（PH-1-PH-3-NH-3）处达到多个局部最大值。 这通常使得晶体管具有减小的电流泄漏。

公开(公告)号：US20100244147A1

公开(公告)日：2010-09-30

申请号：US12382967

申请日：2009-03-27

申请人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

发明人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66659

摘要： An asymmetric insulated-gate field effect transistor (100U or 102U) provided along an upper surface of a semiconductor body contains first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima (316-1-316-3) at respective locations (PH-1-PH-3) spaced apart from one another. The tailoring is typically implemented so that the vertical dopant profile of the pocket portion is relatively flat near the upper semiconductor surface. As a result, the transistor has reduced leakage current.

摘要翻译： 沿着半导体主体的上表面设置的非对称绝缘栅场效应晶体管（100U或102U）包含由沟道区（244或284）横向隔开的第一和第二源/漏区（240和242或280和282） 的晶体管的主体材料。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 比主体材料的横向相邻材料更重掺杂的主体材料的口袋部分（250或290）在很大程度上仅延伸到第一个S / D区域并进入通道区域。 口袋部分的垂直掺杂剂轮廓被调整为在彼此间隔开的相应位置（PH-1-PH-3）处达到多个局部最大值（316-1-316-3）。 通常实施定制，使得袋部分的垂直掺杂剂分布在上半导体表面附近相对平坦。 结果，晶体管具有减小的漏电流。

公开(公告)号：US20100244131A1

公开(公告)日：2010-09-30

申请号：US12382969

申请日：2009-03-27

申请人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

发明人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/265

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/66659 ,  H01L29/7835

摘要： An asymmetric insulated-gate field-effect transistor (100 or 102) has a source (240 or 280) and a drain (242 or 282) laterally separated by a channel zone (244 or 284) of body material (180 or 182) of a semiconductor body. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A more heavily doped pocket portion (250 or 290) of the body material extends largely along only the source. The source has a main source portion (240M or 280M) and a more lightly doped lateral source extension (240E or 280E). The drain has a main portion (242M or 282M) and a more lightly doped lateral drain extension (242E or 282E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.

摘要翻译： 不对称绝缘栅场效应晶体管（100或102）具有由主体材料（180或182）的沟道区（244或284）横向隔开的源（240或280）和漏极（242或282） 半导体体。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 主体材料的更加重掺杂的袋部分（250或290）主要仅沿着源头延伸。 源极具有主源部分（240M或280M）和更轻掺杂的侧向源延伸部（240E或280E）。 漏极具有主要部分（242M或282M）和更轻掺杂的侧向漏极延伸部（242E或282E）。 漏极延伸比源极延伸更轻的掺杂。 限定两个延伸的半导体掺杂剂的最大浓度在漏极延伸中比在源极延伸中更深。 另外或替代地，漏极延伸部在栅极电极之下进一步横向延伸，而不是源极延伸部分。 这些特性使得阈值电压在运行时间内稳定。

公开(公告)号：US08629027B1

公开(公告)日：2014-01-14

申请号：US13079646

申请日：2011-04-04

申请人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

发明人： Constantin Bulucea ,  William D. French ,  Sandeep R. Bahl ,  Jeng-Jiun Yang ,  D. Courtney Parker ,  Peter B. Johnson ,  Donald M. Archer

IPC分类号： H01L27/088

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/82285 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/66659 ,  H01L29/7835

摘要： An asymmetric insulated-gate field-effect transistor (100 or 102) has a source (240 or 280) and a drain (242 or 282) laterally separated by a channel zone (244 or 284) of body material (180 or 182) of a semiconductor body. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A more heavily doped pocket portion (250 or 290) of the body material extends largely along only the source. The source has a main source portion (240M or 280M) and a more lightly doped lateral source extension (240E or 280E). The drain has a main portion (242M or 282M) and a more lightly doped lateral drain extension (242E or 282E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.

摘要翻译： 不对称绝缘栅场效应晶体管（100或102）具有由主体材料（180或182）的沟道区（244或284）横向隔开的源（240或280）和漏极（242或282） 半导体体。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 主体材料的更加重掺杂的袋部分（250或290）主要仅沿着源头延伸。 源极具有主源部分（240M或280M）和更轻掺杂的侧向源延伸部（240E或280E）。 漏极具有主要部分（242M或282M）和更轻掺杂的侧向漏极延伸部（242E或282E）。 漏极延伸比源极延伸更轻的掺杂。 限定两个延伸的半导体掺杂剂的最大浓度在漏极延伸中比在源极延伸中更深。 另外或替代地，漏极延伸部在栅极电极之下进一步横向延伸，而不是源极延伸部分。 这些特性使得阈值电压在运行时间内稳定。

公开(公告)号：US08415752B2

公开(公告)日：2013-04-09

申请号：US13348577

申请日：2012-01-11

申请人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

发明人： Jeng-Jiun Yang ,  Constantin Bulucea ,  Sandeep R. Bahl

IPC分类号： H01L29/78

CPC分类号： H01L29/7835 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66659

摘要： An asymmetric insulated-gate field effect transistor (100U or 102U) provided along an upper surface of a semiconductor body contains first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima (316-1-316-3) at respective locations (PH-1-PH-3) spaced apart from one another. The tailoring is typically implemented so that the vertical dopant profile of the pocket portion is relatively flat near the upper semiconductor surface. As a result, the transistor has reduced leakage current.

摘要翻译： 沿着半导体主体的上表面设置的非对称绝缘栅场效应晶体管（100U或102U）包含由沟道区（244或284）横向隔开的第一和第二源/漏区（240和242或280和282） 的晶体管的主体材料。 栅电极（262或302）覆盖在沟道区上方的栅介电层（260或300）。 比主体材料的横向相邻材料更重掺杂的主体材料的口袋部分（250或290）在很大程度上仅延伸到第一个S / D区域并进入通道区域。 口袋部分的垂直掺杂剂轮廓被调整为在彼此间隔开的相应位置（PH-1-PH-3）处达到多个局部最大值（316-1-316-3）。 通常实施定制，使得袋部分的垂直掺杂剂分布在上半导体表面附近相对平坦。 结果，晶体管具有减小的漏电流。

公开(公告)号：US08410549B2

公开(公告)日：2013-04-02

申请号：US12382968

申请日：2009-03-27

申请人： Constantin Bulucea ,  Jeng-Jiun Yang ,  William D. French ,  Sandeep R. Bahl ,  D. Courtney Parker

发明人： Constantin Bulucea ,  Jeng-Jiun Yang ,  William D. French ,  Sandeep R. Bahl ,  D. Courtney Parker

IPC分类号： H01L29/66

CPC分类号： H01L29/0847 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7835

摘要： Insulated-gate field-effect transistors (“IGFETs”), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET (100, 102, 112, 114, 124, or 126) has a pair of source/drain zones laterally separated by a channel zone of body material of the empty well (180, 182, 192, 194, 204, or 206). A gate electrode overlies a gate dielectric layer above the channel zone. Each source/drain zone (240, 242, 280, 282, 520, 522, 550, 552, 720, 722, 752, or 752) has a main portion (240M, 242M, 280M, 282M, 520M, 522M, 550M, 552M, 720M, 722M, 752M, or 752M) and a more lightly doped lateral extension (240E, 242E, 280E, 282E, 520E, 522E, 550E, 552E, 720E, 722E, 752E, or 752E). Alternatively or additionally, a more heavily doped pocket portion (250 or 290) of the body material extends along one of the source/drain zones. When present, the pocket portion typically causes the IGFET to be an asymmetric device.

摘要翻译： 对称和非对称的绝缘栅场效应晶体管（IGFET）适用于为模拟和数字应用（包括混合信号应用）提供IGFET的半导体制造平台，利用空井区域实现高性能。 相对少量的半导体阱掺杂剂在每个空的孔的顶部附近。 每个IGFET（100,102,112,114,124或126）具有由空井（180,182,192,194,204或206）的主体材料的通道区横向隔开的一对源/排出区 ）。 栅极电极覆盖在沟道区上方的栅极电介质层。 每个源/漏区（240,242,282,282,520,522,550,552,720,722,752或752）具有主要部分（240M，242M，280M，282M，520M，522M，550M， 552M，720M，722M，752M或752M）和更轻掺杂的侧向延伸部（240E，242E，280E，282E，520E，522E，550E，552E，720E，722E，752E或752E）。 替代地或另外地，主体材料的更加掺杂的凹穴部分（250或290）沿着源极/漏极区域中的一个延伸。 当存在时，口袋部分通常使IGFET成为非对称装置。

公开(公告)号：US20100244149A1

公开(公告)日：2010-09-30

申请号：US12382971

申请日：2009-03-27

申请人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

发明人： Constantin Bulucea ,  William D. French ,  Donald M. Archer ,  Jeng-Jiun Yang ,  Sandeep R. Bahl ,  D. Courtney Parker

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/1083 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/518 ,  H01L29/66659 ,  H01L29/7835

摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.

摘要翻译： 一组高性能类似极性的绝缘栅场效应晶体管（100,108,112,116,120和124或102,110,114,118,122和126）具有可选择地不同的侧向源 /漏极延伸，光晕口和栅介质厚度，适用于为模拟和/或数字应用提供各种晶体管的半导体制造平台。 每个晶体管具有一对源极/漏极区，栅极介电层和栅电极。 每个源极/漏极区域包括主要部分和更轻掺杂的横向延伸部分。 一个晶体管的一个源极/漏极区域的横向延伸比另一个晶体管的源极/漏极区域之一的横向延伸更深地掺杂或/并且在上部半导体表面之下更深地延伸。

公开(公告)号：US08304835B2

公开(公告)日：2012-11-06

申请号：US12382973

申请日：2009-03-27

申请人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

IPC分类号： H01L29/36

CPC分类号： H01L27/088 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics. The combination of empty and filled wells enables the semiconductor fabrication platform to provide a wide variety of high-performance IGFETs from which circuit designers can select particular IGFETs for various analog and digital applications, including mixed-signal applications.

摘要翻译： 作为半导体制造平台的核心的半导体结构具有由电子元件特别是绝缘栅场效应晶体管（IGFET）不同地使用的空阱区域和填充阱区域的组合，以实现期望的电子 特点 相当少量的半导体阱掺杂剂靠近空穴的顶部。 相当数量的半导体阱掺杂剂靠近填充井的顶部。 一些IGFET（100,102,112,114,124和126）利用空井（180,182,192,194,204和206）实现期望的晶体管特性。 其它IGFET（108,110,116,118,120和122）利用填充的孔（188,190,196,198,200和202）实现期望的晶体管特性。 空孔和填充孔的组合使得半导体制造平台能够提供各种各样的高性能IGFET，电路设计者可以从其中选择特定的IGFET用于各种模拟和数字应用，包括混合信号应用。

公开(公告)号：US20100244128A1

公开(公告)日：2010-09-30

申请号：US12382973

申请日：2009-03-27

申请人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Sandeep R. Bahl ,  William D. French ,  Jeng-Jiun Yang ,  Donald M. Archer ,  D. Courtney Parker ,  Prasad Chaparala

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L27/088 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics. The combination of empty and filled wells enables the semiconductor fabrication platform to provide a wide variety of high-performance IGFETs from which circuit designers can select particular IGFETs for various analog and digital applications, including mixed-signal applications.

摘要翻译： 作为半导体制造平台的核心的半导体结构具有由电子元件特别是绝缘栅场效应晶体管（“IGFET”）不同地使用的空阱区域和填充阱区域的组合，以实现 所需的电子特性。 相当少量的半导体阱掺杂剂靠近空穴的顶部。 相当数量的半导体阱掺杂剂靠近填充井的顶部。 一些IGFET（100,102,112,114,124和126）利用空井（180,182,192,194,204和206）实现期望的晶体管特性。 其它IGFET（108,110,116,118,120和122）利用填充的孔（188,190,196,198,200和202）实现期望的晶体管特性。 空孔和填充孔的组合使得半导体制造平台能够提供各种各样的高性能IGFET，电路设计者可以从其中选择特定的IGFET用于各种模拟和数字应用，包括混合信号应用。