公开(公告)号：US20110186116A1

公开(公告)日：2011-08-04

申请号：US13055754

申请日：2009-07-27

申请人： Jens Kruemberg ,  Ihor Melnky ,  Eva-Maria Holbig ,  Michael Schmidt ,  Steffen Keller ,  Peter Fath ,  Reinhold Schlosser

发明人： Jens Kruemberg ,  Ihor Melnky ,  Eva-Maria Holbig ,  Michael Schmidt ,  Steffen Keller ,  Peter Fath ,  Reinhold Schlosser

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： Method for producing solar cells with a two-stage doping (9, 11) comprising the method steps of heavy doping (50) of at least a part of the solar cell substrate (1), of at least temporarily protecting doped areas (8), in which heavily doped areas (9) of the two-stage doping (9, 11) should be formed, from an etching medium and etching back (54; 62, 64; 72, 74) unprotected doped areas (17) of the solar cell substrate (1) by means of the etching medium, whereby, for the purpose of protecting the doped areas, sacrificial structures (7) are applied (52) on the areas (8) to be protected, which are at least partly etched (54; 62, 64; 72, 74) during etching back (54; 62, 64; 72, 74) of the unprotected doped areas.

摘要翻译： 一种用于制造具有两级掺杂（9,11）的太阳能电池的方法，包括至少部分太阳能电池衬底（1）的重掺杂（50）至少暂时保护掺杂区域（8）的方法步骤， ，其中应该从蚀刻介质形成两级掺杂（9,11）的重掺杂区域（9）并且蚀刻回（54; 62,64,72,74）未受保护的掺杂区域（17） 为了保护掺杂区域，牺牲结构（7）被施加（52）在要被保护的区域（8）上，其被至少部分蚀刻 （54; 62,64; 72,74）在未受保护的掺杂区域的蚀刻（54; 62,64,72,74）期间。