公开(公告)号：US20110186116A1

公开(公告)日：2011-08-04

申请号：US13055754

申请日：2009-07-27

申请人： Jens Kruemberg ,  Ihor Melnky ,  Eva-Maria Holbig ,  Michael Schmidt ,  Steffen Keller ,  Peter Fath ,  Reinhold Schlosser

发明人： Jens Kruemberg ,  Ihor Melnky ,  Eva-Maria Holbig ,  Michael Schmidt ,  Steffen Keller ,  Peter Fath ,  Reinhold Schlosser

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： Method for producing solar cells with a two-stage doping (9, 11) comprising the method steps of heavy doping (50) of at least a part of the solar cell substrate (1), of at least temporarily protecting doped areas (8), in which heavily doped areas (9) of the two-stage doping (9, 11) should be formed, from an etching medium and etching back (54; 62, 64; 72, 74) unprotected doped areas (17) of the solar cell substrate (1) by means of the etching medium, whereby, for the purpose of protecting the doped areas, sacrificial structures (7) are applied (52) on the areas (8) to be protected, which are at least partly etched (54; 62, 64; 72, 74) during etching back (54; 62, 64; 72, 74) of the unprotected doped areas.

摘要翻译： 一种用于制造具有两级掺杂（9,11）的太阳能电池的方法，包括至少部分太阳能电池衬底（1）的重掺杂（50）至少暂时保护掺杂区域（8）的方法步骤， ，其中应该从蚀刻介质形成两级掺杂（9,11）的重掺杂区域（9）并且蚀刻回（54; 62,64,72,74）未受保护的掺杂区域（17） 为了保护掺杂区域，牺牲结构（7）被施加（52）在要被保护的区域（8）上，其被至少部分蚀刻 （54; 62,64; 72,74）在未受保护的掺杂区域的蚀刻（54; 62,64,72,74）期间。

公开(公告)号：US06441297B1

公开(公告)日：2002-08-27

申请号：US09623996

申请日：2000-10-23

申请人： Steffen Keller ,  Peter Fath ,  Gerhard Willeke

发明人： Steffen Keller ,  Peter Fath ,  Gerhard Willeke

IPC分类号： H01L27142

CPC分类号： H01L31/035281 ,  B64G1/443 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547 ,  Y10S439/954

摘要： The invention relates to a solar cell arrangement consisting of series-connected solar subcells. Said solar subcells consist of a semiconductor wafer which forms a common base material for all of the solar subcells and wherein a number of recesses are provided for delimiting the individual, series-connected solar subcells. The invention is characterised in that at least some of the recesses extend from the top surface of the semiconductor wafer, through the wafer itself to the bottom surface and in that at most some bridge segments are left in continuation of the recesses as far as the wafer edge, to mechanically interconnect the solar subcells.

摘要翻译： 本发明涉及由串联太阳能子电池组成的太阳能电池装置。 所述太阳能子电池由形成用于所有太阳能子电池的公共基底材料的半导体晶片组成，并且其中设置多个凹槽以限定单独的串联连接的太阳能子电池。 本发明的特征在于，至少一些凹槽从半导体晶片的顶表面延伸穿过晶片本身到底面，并且至少一些桥接部分留在凹槽的连续处，直到晶片 边缘，以机械地互连太阳能子电池。

公开(公告)号：US06734037B1

公开(公告)日：2004-05-11

申请号：US10110487

申请日：2002-09-26

申请人： Peter Fath ,  Markus Spiegel ,  Thomas Pernau ,  Gernot Wandel ,  Rainer Moller ,  Johann-George Reichart

发明人： Peter Fath ,  Markus Spiegel ,  Thomas Pernau ,  Gernot Wandel ,  Rainer Moller ,  Johann-George Reichart

IPC分类号： H01L2100

CPC分类号： H01L31/1868 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/958

摘要： The present invention concerns a process for fabricating a solar cell, wherein material is deposited on a multicrystalline silicon substrate and passivation is performed by means of hydrogen plasma. It is proposed that the material be deposited by low-pressure CVD and the hydrogen passivation be effected by feeding in a hydrogen plasma induced remotely from the partially processed solar cells. A device for carrying out the process is also described.

摘要翻译： 本发明涉及一种制造太阳能电池的方法，其中材料沉积在多晶硅衬底上，并且通过氢等离子体进行钝化。 提出通过低压CVD沉积材料，并且通过馈送远离部分处理的太阳能电池的氢等离子体来进行氢钝化。 还描述了用于执行该过程的装置。

公开(公告)号：US08182706B2

公开(公告)日：2012-05-22

申请号：US12438009

申请日：2007-07-12

申请人： Peter Fath ,  Ihor Melnyk ,  Eckard Wefringhaus

发明人： Peter Fath ,  Ihor Melnyk ,  Eckard Wefringhaus

IPC分类号： B29D11/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way.

摘要翻译： 在用于生产太阳能电池的硅晶片的纹理化方法中，引入硅晶片的步骤包括使用在至少80摄氏度的温度下的纹理溶液，其包含与1重量％至6重量％的水混合 的KOH或2重量％至8重量％的NaOH和表面活性剂或表面活性剂混合物构成小于0.01重量％。 非常经济的纹理可以这样执行。

公开(公告)号：US5704992A

公开(公告)日：1998-01-06

申请号：US592327

申请日：1996-03-26

申请人： Gerhard Willeke ,  Peter Fath

发明人： Gerhard Willeke ,  Peter Fath

IPC分类号： B01D29/01 ,  B01D39/12 ,  B01D46/12 ,  B01J19/00 ,  B01J35/04 ,  F28F3/04 ,  F28F13/02 ,  H01L21/304 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/047 ,  H01L31/18 ,  H01L31/06

CPC分类号： F28F3/048 ,  B01D29/012 ,  B01D39/12 ,  B01D46/12 ,  B01J19/0093 ,  B01J35/04 ,  F28F13/02 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/18 ,  B01J2219/00783 ,  B01J2219/00828 ,  B01J2219/00835 ,  B01J2219/00873 ,  F28F2260/02 ,  H01L2924/0002 ,  Y02E10/50 ,  Y10S438/959

摘要： A solar cell comprising a substrate on which grooves are formed on the from and back sides thereof. The grooves on the front side are disposed in order to inscribe an angle with respect to the grooves on the back side. The intersection of the grooves on the from side and the back side form a plurality of through holes which form a grid pattern. Also disclosed is a method for producing a flat component with a grid of through holes (7). To produce the through holes (7), a plurality of generally equidistant, parallel V-shaped grooves (8) are formed on the from and back sides of a wafer. The grooves (8) on the two sides inscribe an angle relative to one another and are sufficiently deep for the through holes (7) to be automatically created at the intersections of grooves (8). The method is suitable for producing high efficiency solar cells.

摘要翻译： PCT No.PCT / DE94 / 00860 Sec。 371日期：1996年3月26日 102（e）1996年3月26日PCT PCT 1994年7月25日PCT公布。 出版物WO95 / 05008 日期：1995年2月16日太阳能电池包括在其背面形成有沟槽的基板。 前侧的凹槽设置成相对于后侧的槽刻划一角度。 从侧面和背面的凹槽的交叉形成形成网格图案的多个通孔。 还公开了一种用于制造具有通孔网格（7）的平坦部件的方法。 为了制造通孔（7），在晶片的背面和背面上形成多个大致等距离的平行V形槽（8）。 两侧的凹槽（8）相对于彼此成一角度，并且足够深，以便在凹槽（8）的交叉处自动产生通孔（7）。 该方法适用于生产高效太阳能电池。

公开(公告)号：US20100120248A1

公开(公告)日：2010-05-13

申请号：US12524016

申请日：2008-01-22

申请人： Peter Fath ,  Ihor Melnyk

发明人： Peter Fath ,  Ihor Melnyk

IPC分类号： C09K13/04 ,  H01L21/461

CPC分类号： C09K3/1463 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/31111

摘要： An etching solution contains water, nitric acid, hydrofluoric acid, and sulphuric acid. More specifically it contains 15 to 40% by weight of nitric acid, 10 to 41% by weight of sulphuric acid and 0.8 to 2.0% by weight of hydrofluoric acid. The etching solution is used for etching silicon and to etching methods for silicon wafers.

摘要翻译： 蚀刻溶液含有水，硝酸，氢氟酸和硫酸。 更具体地，其含有15至40重量％的硝酸，10至41重量％的硫酸和0.8至2.0重量％的氢氟酸。 蚀刻溶液用于蚀刻硅和硅晶片的蚀刻方法。

公开(公告)号：US20090246969A1

公开(公告)日：2009-10-01

申请号：US12438009

申请日：2007-07-12

申请人： Peter Fath ,  Ihor Melnyk ,  Eckard Wefringhaus

发明人： Peter Fath ,  Ihor Melnyk ,  Eckard Wefringhaus

IPC分类号： H01L21/306

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way.

摘要翻译： 在用于生产太阳能电池的硅晶片的纹理化方法中，引入硅晶片的步骤包括使用在至少80摄氏度的温度下的纹理溶液，其包含与1重量％至6重量％的水混合 的KOH或2重量％至8重量％的NaOH和表面活性剂或表面活性剂混合物构成小于0.01重量％。 非常经济的纹理可以这样执行。

公开(公告)号：US20090017606A1

公开(公告)日：2009-01-15

申请号：US12178087

申请日：2008-07-23

申请人： Peter Fath ,  Ihor Melnyk

发明人： Peter Fath ,  Ihor Melnyk

IPC分类号： H01L21/22

CPC分类号： H01L31/068 ,  H01L21/2255 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a semiconductor component, in particular a solar cell, having regions which are doped to different extents. A layer is formed which inhibits the diffusion of a dopant and can be penetrated by a dopant, on at least one part of the surface of a semiconductor component material. The diffusion-inhibiting layer is at least partially removed in at least one high-doping region. A dopant source is formed on the diffusion-inhibiting layer and in the at least one high-doping region. Then the dopant is diffused from the dopant source into the semiconductor component material. The semiconductor component is suitable for use in integrated circuits, electronic circuits, solar cell modules, and to produce solar cells having a selective emitter structure.

摘要翻译： 一种制造具有掺杂到不同程度的区域的半导体元件，特别是太阳能电池的方法。 在半导体组件材料的表面的至少一部分上形成抑制掺杂剂的扩散并且可被掺杂剂穿透的层。 在至少一个高掺杂区域中至少部分去除扩散抑制层。 在扩散抑制层和至少一个高掺杂区域中形成掺杂剂源。 然后掺杂剂从掺杂剂源扩散到半导体组件材料中。 半导体元件适用于集成电路，电子电路，太阳能电池模块，并且生产具有选择性发射极结构的太阳能电池。

公开(公告)号：US20080251123A1

公开(公告)日：2008-10-16

申请号：US11936988

申请日：2007-11-08

申请人： Peter Fath ,  Andre Kress

发明人： Peter Fath ,  Andre Kress

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： The problem posed by both conventional and novel crystalline silicon solar cells is the electrical isolation of layers doped with p and n conductivity types. The invention solves said problem in a simple and elegant manner. A masking paste is applied locally to at least one side of the silicon substrate and is subsequently dried. A doping material diffusion is then carried out, whereby the conductivity type of the doping material is in opposition to that of the base doping of the crystalline silicon substrate. In one of the subsequent production steps of the solar cell, the electric contacts are applied in such a way that at least one section of said contacts is isolated electrically from the rest of the contact by the masking paste. The masking paste thus allows an electrical isolation of the two external contacts of a solar cell by preventing the diffusion of one doping material using said paste. Other methods that achieve the same results are substantially more complex and expensive to use.

摘要翻译： 常规和新型晶体硅太阳能电池提出的问题是掺杂有p和n导电类型的层的电隔离。 本发明以简单优雅的方式解决了上述问题。 将掩模膏局部施加到硅衬底的至少一侧，随后干燥。 然后进行掺杂材料扩散，由此掺杂材料的导电类型与晶体硅衬底的基底掺杂的导电类型相反。 在太阳能电池的随后的生产步骤之一中，以这样的方式施加电触头，使得所述触点的至少一个部分通过掩模膏与触点的其余部分电隔离。 因此，掩模糊通过防止使用所述糊料扩散一种掺杂材料来允许太阳能电池的两个外部触点的电隔离。 实现相同结果的其它方法实际上更复杂并且使用昂贵。

公开(公告)号：US20090074650A1

公开(公告)日：2009-03-19

申请号：US12158348

申请日：2006-08-09

申请人： Peter Fath ,  Albrecht Mozer

发明人： Peter Fath ,  Albrecht Mozer

IPC分类号： C01B33/023 ,  C01B33/021 ,  C23F1/00

CPC分类号： H01L31/1804 ,  C30B11/00 ,  C30B29/06 ,  Y02E10/547 ,  Y02P70/521

摘要： An exemplary method of production of solar grade silicon is disclosed. The method comprises melting the silicon and directionally solidifying the melt. The method additionally comprises forming a crystallization front during the directional solidification, the front having the shape of at least a section of a spherical surface. Also disclosed are a silicon wafer and a solar cell in accordance with an exemplary embodiment of the present invention.

摘要翻译： 公开了一种生产太阳能级硅的示例性方法。 该方法包括熔化硅并定向凝固熔体。 该方法还包括在定向凝固期间形成结晶前沿，前部具有至少一个球形部分的形状。 还公开了根据本发明的示例性实施例的硅晶片和太阳能电池。