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公开(公告)号：US08180184B2
公开(公告)日：2012-05-15
申请号：US12504607
申请日：2009-07-16
Applicant: Jeong Woo Park , Jongbum You , Gyungock Kim
Inventor： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC: G02F1/035
CPC classification number: G02F1/025 , G02F2001/0156 , G02F2201/063 , G02F2201/12 , G02F2202/105 , G02F2202/32
Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
Abstract translation: 提供吸收调制器。 吸收调制器包括衬底，设置在衬底上的绝缘层和在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。
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公开(公告)号：US08548281B2
公开(公告)日：2013-10-01
申请号：US12872881
申请日：2010-08-31
Applicant: Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
Inventor： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2201/063
Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。
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公开(公告)号：US08346027B2
公开(公告)日：2013-01-01
申请号：US12816550
申请日：2010-06-16
Applicant: Jeong Woo Park , Jongbum You , Gyungock Kim
Inventor： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC: G02F1/035
CPC classification number: G02F1/2257 , G02F1/015 , G02F2001/212
Abstract: Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode.
Abstract translation: 提供了一种电光装置。 电光装置包括：输入Y分支，包括第一输入分支和第二输入分支，包括第一输出分支和第二输出分支的输出Y分支，串联连接的第一光调制器和第二光调制器 在第一输入分支和第一输出分支之间，以及将第二输入分支连接到第二输出分支的第三光调制器。 第一光调制器包括PIN二极管，并且第二光调制器和第三光调制器中的每一个包括PN二极管。
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公开(公告)号：US08320037B2
公开(公告)日：2012-11-27
申请号：US12652623
申请日：2010-01-05
Applicant: Jeong Woo Park , Jongbum You , Gyungock Kim
Inventor： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC: G02F1/01 , H01L31/0232
CPC classification number: G02F1/025 , G02F1/2257 , G02F2001/212
Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
Abstract translation: 提供了一种电光装置。 电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。 第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。
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公开(公告)号：US20110135243A1
公开(公告)日：2011-06-09
申请号：US12816550
申请日：2010-06-16
Applicant: Jeong Woo Park , Jongbum You , Gyungock Kim
Inventor： Jeong Woo Park , Jongbum You , Gyungock Kim
CPC classification number: G02F1/2257 , G02F1/015 , G02F2001/212
Abstract: Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode.
Abstract translation: 提供了一种电光装置。 电光装置包括：输入Y分支，包括第一输入分支和第二输入分支，包括第一输出分支和第二输出分支的输出Y分支，串联连接的第一光调制器和第二光调制器 在第一输入分支和第一输出分支之间，以及将第二输入分支连接到第二输出分支的第三光调制器。 第一光调制器包括PIN二极管，并且第二光调制器和第三光调制器中的每一个包括PN二极管。
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Patent Agency Ranking
公开(公告)号：US20100142878A1
公开(公告)日：2010-06-10
申请号：US12504607
申请日：2009-07-16
Applicant: Jeong Woo PARK , Jongbum You , Gyungock Kim
Inventor： Jeong Woo PARK , Jongbum You , Gyungock Kim
CPC classification number: G02F1/025 , G02F2001/0156 , G02F2201/063 , G02F2201/12 , G02F2202/105 , G02F2202/32
Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
Abstract translation: 提供吸收调制器。 吸收调制器包括基板，设置在基板上的绝缘层，以及在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。
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公开(公告)号：US20110109955A1
公开(公告)日：2011-05-12
申请号：US12771939
申请日：2010-04-30
Applicant: Jeong Woo PARK , Jongbum You , Gyungock Kim
Inventor： Jeong Woo PARK , Jongbum You , Gyungock Kim
CPC classification number: G02F1/025 , G02F1/2257 , G02F2001/212
Abstract: Provided is an electro-optic device. Sine the electro-optic device includes a plurality of first conductive type semiconductor layers and a plurality of depletion layers formed by a third semiconductor disposed between the plurality of first conductive type semiconductor layers, an electro-optic device optimized for a high speed and low power consumption can be provided.
Abstract translation: 提供了一种电光装置。 所述电光装置一般包括多个第一导电类型半导体层和由设置在多个第一导电类型半导体层之间的第三半导体层形成的多个耗尽层，为高速和低功率优化的电光装置 可以提供消费。
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公开(公告)号：US20110051222A1
公开(公告)日：2011-03-03
申请号：US12652623
申请日：2010-01-05
Applicant: Jeong Woo Park , Jongbum You , Gyungock Kim
Inventor： Jeong Woo Park , Jongbum You , Gyungock Kim
CPC classification number: G02F1/025 , G02F1/2257 , G02F2001/212
Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
Abstract translation: 提供了一种电光装置。 电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。 第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。
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公开(公告)号：US07924492B2
公开(公告)日：2011-04-12
申请号：US12374261
申请日：2007-04-24
Applicant: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
Inventor： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
IPC: G02F1/07
CPC classification number: G02F1/025 , G02F2203/50 , G11C13/04
Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.
Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。
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公开(公告)号：US07646942B2
公开(公告)日：2010-01-12
申请号：US11833004
申请日：2007-08-02
Applicant: Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
Inventor： Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
CPC classification number: G02F1/025 , G02F1/3133 , G02F2001/0152 , G02F2203/15
Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.
Abstract translation: 提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。 高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。
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