公开(公告)号：US08151149B2

公开(公告)日：2012-04-03

申请号：US12649743

申请日：2009-12-30

申请人： Jeong-Hun Lee ,  Yong-Mi Kim ,  Jeong-Tea Hwang

发明人： Jeong-Hun Lee ,  Yong-Mi Kim ,  Jeong-Tea Hwang

IPC分类号： G11C29/00

CPC分类号： G11C29/46

摘要： A semiconductor memory apparatus according to the embodiment includes a test mode controller, a first data alignment unit, a decoder, a test executing unit and a second data alignment unit. The test mode controller is configured to generate test enable signals in response to a test mode setting signal and a read command. The first data alignment unit is configured to parallely align first input data that are input in series, generate first alignment data, and transmit it to the first data driver. The decoder is configured to decode the first alignment data in response to the test enable signal and generate the decoding signal. The test executing unit is configured to execute the preset test mode in response to the decoding signal. The second data alignment unit is configured to parallely align second input data, which are input in series, in response to the test enable signal, generate second alignment data, and transmit it to a second data driver.

摘要翻译： 根据实施例的半导体存储装置包括测试模式控制器，第一数据对准单元，解码器，测试执行单元和第二数据对准单元。 测试模式控制器被配置为响应于测试模式设置信号和读取命令而产生测试使能信号。 第一数据对准单元被配置为并行地对准串联输入的第一输入数据，产生第一对准数据，并将其发送到第一数据驱动器。 解码器被配置为响应于测试使能信号解码第一对准数据并产生解码信号。 测试执行单元被配置为响应于解码信号执行预设测试模式。 第二数据对准单元被配置为响应于测试使能信号并行输入串联的第二输入数据，产生第二对准数据并将其发送到第二数据驱动器。

公开(公告)号：US07983106B2

公开(公告)日：2011-07-19

申请号：US12494815

申请日：2009-06-30

申请人： Yong-Mi Kim ,  Jeong-Tea Hwang ,  Jeong-Hun Lee

发明人： Yong-Mi Kim ,  Jeong-Tea Hwang ,  Jeong-Hun Lee

IPC分类号： G11C5/14

CPC分类号： G11C5/147 ,  G11C7/02 ,  G11C7/22 ,  G11C7/222

摘要： A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

摘要翻译： 半导体存储装置的电压稳定电路包括操作速度检测单元，其被配置为检测半导体存储装置的操作速度以产生检测信号;以及电压线控制单元，被配置为将第一电压线和第二电压线 响应于检测信号。