公开(公告)号：US20060055043A1

公开(公告)日：2006-03-16

申请号：US10939931

申请日：2004-09-13

申请人： Jhon Liaw ,  Sung-Chun Hsieh ,  Wesley Lin ,  Chii-Ming Wu ,  Ren-Fen Tsui

发明人： Jhon Liaw ,  Sung-Chun Hsieh ,  Wesley Lin ,  Chii-Ming Wu ,  Ren-Fen Tsui

IPC分类号： H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/76816 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.

摘要翻译： 本公开一般涉及半导体器件的制造，更具体地，涉及用于半导体器件的改进的连接结构。 半导体器件的连接结构包括：花生形开口，其包括狭窄区域和一个或多个宽阔区域，其中所述狭窄区域在所述一个或多个宽区域中的两个之间; 以及用于至少部分地填充花生形开口的导电插塞。

公开(公告)号：US07705464B2

公开(公告)日：2010-04-27

申请号：US10939931

申请日：2004-09-13

申请人： Jhon Jhy Liaw ,  Sung-Chun Hsieh ,  Wesley Lin ,  Chii-Ming W Wu ,  Ren-Fen Tsui

发明人： Jhon Jhy Liaw ,  Sung-Chun Hsieh ,  Wesley Lin ,  Chii-Ming W Wu ,  Ren-Fen Tsui

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/76816 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.

摘要翻译： 本公开一般涉及半导体器件的制造，更具体地，涉及用于半导体器件的改进的连接结构。 半导体器件的连接结构包括：花生形开口，其包括狭窄区域和一个或多个宽阔区域，其中所述狭窄区域在所述一个或多个宽区域中的两个之间; 以及用于至少部分地填充花生形开口的导电插塞。

公开(公告)号：US06228753B1

公开(公告)日：2001-05-08

申请号：US09336044

申请日：1999-06-18

申请人： Yung-Tsun Lo ,  Wen-Yu Ho ,  Sung-Chun Hsieh

发明人： Yung-Tsun Lo ,  Wen-Yu Ho ,  Sung-Chun Hsieh

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of fabricating bonding pad structure for improving bonding pad surface quality. A substrate has a bonding pad thereon. A passivation is formed on the bonding pad to expose the bonding pad. A sacrificial layer is formed on the passivation and an opening is formed within the sacrificial layer to expose the bonding pad. A Cu/Al alloy is formed on the passivation to at least cover the bonding pad. The sacrificial layer and the Cu/Al alloy thereon are removed, such that the Cu/Al alloy remains on the bonding pad.

摘要翻译： 一种制造焊盘结构以提高焊盘表面质量的方法。 衬底上具有焊盘。 在焊盘上形成钝化以露出焊盘。 在钝化层上形成牺牲层，在牺牲层内形成一个开口以露出焊盘。 在钝化层上形成Cu / Al合金，至少覆盖焊盘。 去除牺牲层和其上的Cu / Al合金，使得Cu / Al合金保留在接合焊盘上。

公开(公告)号：US6150235A

公开(公告)日：2000-11-21

申请号：US490275

申请日：2000-01-24

申请人： Yih-Yuh Doong ,  Sung-Chun Hsieh ,  Tsu-Bin Shen ,  Ching-Hsiang Hsu

发明人： Yih-Yuh Doong ,  Sung-Chun Hsieh ,  Tsu-Bin Shen ,  Ching-Hsiang Hsu

IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L21/76

CPC分类号： H01L21/76237 ,  H01L21/823878

摘要： A method for forming shallow trench isolation (STI) structures on a semiconductor substrate is disclosed. First a semiconductor substrate with a first area and a second area adjacent to the first area is provided. A mask layer is formed on the substrate, and is etched to expose portions of the substrate. A first photoresist is formed to cover the second area for exposing the first area. A first implanting procedure is performed with a titled angle to form first doping areas on the substrate encroaching into portions of the substrate covered by the first photoresist. The first photoresist is removed. A second photoresist is formed on the substrate to cover the first area for exposing the second area. And a second implanting procedure is done with a titled angle to form second doping areas on the substrate encroaching into portions of the substrate covered by the second photoresist. The second photoresist is removed. The substrate is etched to remove the first doping areas and the second doping areas for forming trench structures therein. It is noted that portions of the first doping areas and the second doping areas are residual in upper portions of sidewalls of the trench structures adjacent to the mask layer. Then the shallow trench isolations are formed in the trench structures.

摘要翻译： 公开了一种在半导体衬底上形成浅沟槽隔离（STI）结构的方法。 首先，提供具有与第一区域相邻的第一区域和第二区域的半导体衬底。 掩模层形成在衬底上，并被蚀刻以暴露衬底的部分。 形成第一光致抗蚀剂以覆盖用于暴露第一区域的第二区域。 以标题角度执行第一植入过程，以在衬底上形成侵蚀到由第一光致抗蚀剂覆盖的衬底的部分中的第一掺杂区域。 去除第一光致抗蚀剂。 在基板上形成第二光致抗蚀剂以覆盖用于暴露第二区域的第一区域。 并且以标题角完成第二种植入过程，以在衬底上形成侵蚀到由第二光致抗蚀剂覆盖的衬底的部分中的第二掺杂区域。 去除第二光致抗蚀剂。 蚀刻衬底以除去第一掺杂区域和用于在其中形成沟槽结构的第二掺杂区域。 要注意的是，第一掺杂区域和第二掺杂区域的部分在与掩模层相邻的沟槽结构的侧壁的上部残留。 然后在沟槽结构中形成浅沟槽隔离。