公开(公告)号：US07060574B2

公开(公告)日：2006-06-13

申请号：US10839951

申请日：2004-05-05

申请人： Ji-Young Kim ,  Chang-Sub Lee

发明人： Ji-Young Kim ,  Chang-Sub Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

摘要： In a method of manufacturing a buried channel type transistor, a trench is formed at a surface portion of a substrate. A first and a second threshold voltage control regions are formed at portions of the substrate beneath a bottom face of the trench and adjacent to a sidewall of the trench, respectively. A gate electrode filling the trench is formed. Source/drain regions are formed at portions of the substrate adjacent to the sidewall of the gate electrode. Stopper regions are formed at portions of the substrate beneath the source/drain regions and beneath the first and second threshold voltage control regions, respectively. The buried channel type transistor has a high breakdown voltage between the source/drain regions although a threshold voltage thereof is low.

公开(公告)号：US07462544B2

公开(公告)日：2008-12-09

申请号：US11100596

申请日：2005-04-07

申请人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

发明人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/76232 ,  H01L27/10876 ,  H01L29/66621

摘要： A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

摘要翻译： 一种包括有源区的晶体管及其方法。 有源区域可以包括具有矩形，弯曲或圆形形状中的至少一个的拐角。 所述方法可以包括各向同性蚀刻有源区域的至少一部分，使得该部分包括期望的形状。

公开(公告)号：US20060001107A1

公开(公告)日：2006-01-05

申请号：US11100596

申请日：2005-04-07

申请人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

发明人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

IPC分类号： H01L27/108

CPC分类号： H01L21/76232 ,  H01L27/10876 ,  H01L29/66621

摘要： A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

公开(公告)号：US20090127635A1

公开(公告)日：2009-05-21

申请号：US12289393

申请日：2008-10-27

申请人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

发明人： Ji-Young Kim ,  Chang-Sub Lee ,  Sang-Jun Park ,  Hyo-June Kim

IPC分类号： H01L29/78 ,  H01L21/3205 ,  H01L21/336

CPC分类号： H01L21/76232 ,  H01L27/10876 ,  H01L29/66621

摘要： A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

摘要翻译： 一种包括有源区的晶体管及其方法。 有源区域可以包括具有矩形，弯曲或圆形形状中的至少一个的拐角。 所述方法可以包括各向同性蚀刻有源区域的至少一部分，使得该部分包括期望的形状。

公开(公告)号：US20060170039A1

公开(公告)日：2006-08-03

申请号：US11394829

申请日：2006-03-31

申请人： Ji-Young Kim ,  Chang-Sub Lee

发明人： Ji-Young Kim ,  Chang-Sub Lee

IPC分类号： H01L29/94

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

摘要： In a method of manufacturing a buried channel type transistor, a trench is formed at a surface portion of a substrate. A first and a second threshold voltage control regions are formed at portions of the substrate beneath a bottom face of the trench and adjacent to a sidewall of the trench, respectively. A gate electrode filling the trench is formed. Source/drain regions are formed at portions of the substrate adjacent to the sidewall of the gate electrode. Stopper regions are formed at portions of the substrate beneath the source/drain regions and beneath the first and second threshold voltage control regions, respectively. The buried channel type transistor has a high breakdown voltage between the source/drain regions although a threshold voltage thereof is low.

摘要翻译： 在埋入沟道型晶体管的制造方法中，在衬底的表面部分形成沟槽。 第一和第二阈值电压控制区分别形成在沟槽的底面下方的衬底的下方并与沟槽的侧壁相邻的部分。 形成填充沟槽的栅电极。 源极/漏极区域形成在与栅电极的侧壁相邻的衬底的部分处。 阻挡区域分别形成在源极/漏极区域下方的衬底的部分处，并分别形成在第一和第二阈值电压控制区域下方。 掩埋沟道型晶体管虽然阈值电压低，但在源极/漏极区域之间具有高的击穿电压。

公开(公告)号：US07326975B2

公开(公告)日：2008-02-05

申请号：US11394829

申请日：2006-03-31

申请人： Ji-Young Kim ,  Chang-Sub Lee

发明人： Ji-Young Kim ,  Chang-Sub Lee

IPC分类号： H01L29/72

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

摘要： In a method of manufacturing a buried channel type transistor, a trench is formed at a surface portion of a substrate. A first and a second threshold voltage control regions are formed at portions of the substrate beneath a bottom face of the trench and adjacent to a sidewall of the trench, respectively. A gate electrode filling the trench is formed. Source/drain regions are formed at portions of the substrate adjacent to the sidewall of the gate electrode. Stopper regions are formed at portions of the substrate beneath the source/drain regions and beneath the first and second threshold voltage control regions, respectively. The buried channel type transistor has a high breakdown voltage between the source/drain regions although a threshold voltage thereof is low.

摘要翻译： 在埋入沟道型晶体管的制造方法中，在衬底的表面部分形成沟槽。 第一和第二阈值电压控制区分别形成在沟槽的底面下方的衬底的下方并与沟槽的侧壁相邻的部分。 形成填充沟槽的栅电极。 源极/漏极区域形成在与栅电极的侧壁相邻的衬底的部分处。 阻挡区域分别形成在源极/漏极区域下方的衬底的部分处，并分别形成在第一和第二阈值电压控制区域下方。 掩埋沟道型晶体管虽然阈值电压低，但在源极/漏极区域之间具有高的击穿电压。

公开(公告)号：US10296114B2

公开(公告)日：2019-05-21

申请号：US12788669

申请日：2010-05-27

申请人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye-Dong Kim ,  Ji-Young Kim

发明人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye-Dong Kim ,  Ji-Young Kim

IPC分类号： G06F3/041 ,  G06F3/042 ,  H01L27/12

摘要： A touch screen display apparatus including a sensor unit to sense and to process light signals and a pixel unit to drive pixels according to the light signal processing performed by the sensor unit. The touch screen display apparatus includes a substrate; a plurality of pixel units disposed on the substrate, wherein each of the pixel units includes a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; and a plurality of sensor units disposed on the substrate, wherein each of the sensor units includes a sensor first electrode, a sensor second electrode, and an organic light receiving layer interposed between the sensor first electrode and the sensor second electrode.

公开(公告)号：US09330960B2

公开(公告)日：2016-05-03

申请号：US14296850

申请日：2014-06-05

申请人： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

发明人： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

IPC分类号： H01L21/00 ,  H01L21/764 ,  H01L49/02 ,  H01L27/108

CPC分类号： H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

摘要： A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

摘要翻译： 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

公开(公告)号：US09035330B2

公开(公告)日：2015-05-19

申请号：US13088261

申请日：2011-04-15

申请人： Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

发明人： Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

IPC分类号： H01L33/00 ,  H01L29/04 ,  H01L31/036 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3246 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253

摘要： An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括：基板，基板上的多个像素，多个第一电极，每个设置在多个像素中的每一个中;像素限定层，包括限定子层的第一像素， 每个两个相邻的第一电极，以及限定子层的第二像素，覆盖限定每个两个相邻的第一电极的子层和表面边缘部分的第一像素，设置在每个第一电极上并包括发射层的中间层，以及 配置成面对第一电极的第二电极。

公开(公告)号：US08952900B2

公开(公告)日：2015-02-10

申请号：US12852702

申请日：2010-08-09

申请人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye Dong Kim ,  Ji-Young Kim

发明人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye Dong Kim ,  Ji-Young Kim

IPC分类号： G06F3/041

CPC分类号： G06F3/0412 ,  Y10T29/49124

摘要： A touch screen display apparatus for easily sensing the touch of a user. The touch screen display apparatus includes: a substrate; a display unit formed on the substrate; and a touch panel disposed to face the display unit, where the touch panel comprises a sealing substrate, a first electrode formed on the sealing substrate, a second electrode spaced apart from the first electrode, and a light receiving unit comprising an organic material interposed between the first electrode and the second electrode.

摘要翻译： 一种触摸屏显示装置，用于容易地感测用户的触摸。 触摸屏显示装置包括：基板; 形成在所述基板上的显示单元; 以及设置为面对显示单元的触摸面板，其中触摸面板包括密封基板，形成在密封基板上的第一电极，与第一电极间隔开的第二电极，以及光接收单元，其包括介于 第一电极和第二电极。