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1.发明申请ROTARY DRILL BIT INCLUDING AT LEAST ONE SUPERABRASIVE CUTTING ELEMENT HAVING A DIAMOND-SILICON CARBIDE COMPOSITE TABLE 有权旋转钻头包括至少一个具有金刚石碳化物复合材料表的超级切割元件公开(公告)号：US20120181090A1
公开(公告)日：2012-07-19
申请号：US13431027
申请日：2012-03-27
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
IPC分类号： E21B10/36
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments relate to rotary drill bits that employ superabrasive cutting elements including a diamond-silicon carbide composite table. In an embodiment, a rotary drill bit includes a bit body configured to engage a subterranean formation. The bit body includes a plurality of blades. The rotary drill bit further includes a plurality of superabrasive cutting elements. Each of the superabrasive cutting elements is attached to a corresponding one of the cutting blades. At least one of the superabrasive cutting elements includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix.
摘要翻译： 实施例涉及使用包括金刚石 - 碳化硅复合台的超级磨料切割元件的旋转钻头。 在一个实施例中，旋转钻头包括构造成接合地下地层的钻头体。 钻头体包括多个叶片。 旋转钻头还包括多个超研磨切割元件。 每个超级磨料切割元件附接到相应的一个切割刀片。 超级磨料切割元件中的至少一个包括基底和结合到基底的超级磨料台。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过基体分散的纳米级碳化硅晶粒和微米级金刚石颗粒的基体。
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2.发明申请Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor 有权超级磨料包括金刚石 - 碳化硅复合材料，其制造方法及其应用公开(公告)号：US20080206576A1
公开(公告)日：2008-08-28
申请号：US12001990
申请日：2007-12-12
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
IPC分类号： B32B5/00
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments of the present invention relate to diamond-silicon carbide composites, superabrasive compacts including such diamond-silicon carbide composites, and methods of fabricating such diamond-silicon carbide composites and superabrasive compacts. In one embodiment, a superabrasive compact includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix. In another embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to heat and pressure to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要翻译： 本发明的实施方案涉及金刚石 - 碳化硅复合材料，包括这种金刚石 - 碳化硅复合材料的超级磨料压块，以及制造这种金刚石 - 碳化硅复合材料和超级磨料压块的方法。 在一个实施例中，超级磨料致密体包括基底和结合到基底的超研磨台。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过基体分散的纳米级碳化硅晶粒和微米级金刚石颗粒的基体。 在另一个实施例中，公开了一种制造超硬磨料的方法。 形成包含金刚石颗粒和硅的混合物的组件。 硅包括非晶硅，通过研磨方法形成的非晶硅结晶的结晶硅或其组合。 衬底位于该混合物附近。 将组件经受热和压力以形成包含结合到衬底的超级磨料工作台的超硬磨料。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过碳化硅颗粒的基体分散的金刚石颗粒。
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3.发明授权Methods of fabricating a superabrasive compact including a diamond-silicon carbide composite table 有权制造包括金刚石 - 碳化硅复合板的超级磨料压块的方法公开(公告)号：US08168115B2
公开(公告)日：2012-05-01
申请号：US13173292
申请日：2011-06-30
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
IPC分类号： B32B9/00
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments relate to superabrasive compacts including a diamond-silicon carbide composite table, and methods of fabricating such superabrasive compacts. In an embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to a high-pressure/high-temperature process to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要翻译： 实施例涉及包括金刚石 - 碳化硅复合工作台的超级磨料压块以及制造这种超级磨料压块的方法。 在一个实施例中，公开了制造超硬磨料的方法。 形成包含金刚石颗粒和硅的混合物的组件。 硅包括非晶硅，通过研磨方法形成的非晶硅结晶的结晶硅或其组合。 衬底位于该混合物附近。 对组件进行高压/高温处理以形成包含结合到基底的超级磨料台的超级磨料。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过碳化硅颗粒的基体分散的金刚石颗粒。
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4.发明申请METHODS OF FABRICATING A SUPERABRASIVE COMPACT INCLUDING A DIAMOND-SILICON CARBIDE COMPOSITE TABLE 有权一种包含二氧化硅碳化物复合材料表的超级复合材料的制造方法公开(公告)号：US20110258937A1
公开(公告)日：2011-10-27
申请号：US13173292
申请日：2011-06-30
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments relate to superabrasive compacts including a diamond-silicon carbide composite table, and methods of fabricating such superabrasive compacts. In an embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to a high-pressure/high-temperature process to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要翻译： 实施例涉及包括金刚石 - 碳化硅复合工作台的超级磨料压块以及制造这种超级磨料压块的方法。 在一个实施例中，公开了制造超硬磨料的方法。 形成包含金刚石颗粒和硅的混合物的组件。 硅包括非晶硅，通过研磨方法形成的非晶硅结晶的结晶硅或其组合。 衬底位于该混合物附近。 对组件进行高压/高温处理以形成包含结合到基底的超级磨料台的超级磨料。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过碳化硅颗粒的基体分散的金刚石颗粒。
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5.发明授权Rotary drill bit including at least one superabrasive cutting element having a diamond-silicon carbide composite table 有权旋转钻头，包括至少一个具有金刚石 - 碳化硅复合台的超级磨料切割元件公开(公告)号：US08276691B2
公开(公告)日：2012-10-02
申请号：US13431027
申请日：2012-03-27
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
IPC分类号： B32B9/00
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments relate to rotary drill bits that employ superabrasive cutting elements including a diamond-silicon carbide composite table. In an embodiment, a rotary drill bit includes a bit body configured to engage a subterranean formation. The bit body includes a plurality of blades. The rotary drill bit further includes a plurality of superabrasive cutting elements. Each of the superabrasive cutting elements is attached to a corresponding one of the cutting blades. At least one of the superabrasive cutting elements includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix.
摘要翻译： 实施例涉及使用包括金刚石 - 碳化硅复合台的超级磨料切割元件的旋转钻头。 在一个实施例中，旋转钻头包括构造成接合地下地层的钻头体。 钻头体包括多个叶片。 旋转钻头还包括多个超研磨切割元件。 每个超级磨料切割元件附接到相应的一个切割刀片。 超级磨料切割元件中的至少一个包括基底和结合到基底的超级磨料台。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过基体分散的纳米级碳化硅晶粒和微米级金刚石颗粒的基体。
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6.发明授权Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor 有权超级磨料包括金刚石 - 碳化硅复合材料，其制造方法及其应用公开(公告)号：US07998573B2
公开(公告)日：2011-08-16
申请号：US12001990
申请日：2007-12-12
申请人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
发明人： Jiang Qian , Kenneth E. Bertagnolli , Michael A. Vail , Jason Wiggins , Jim I. Dewberry , David P. Miess
IPC分类号： B32B9/00
CPC分类号： B24D3/10 , B24D18/00 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/62802 , C04B35/6316 , C04B35/645 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5472 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F16C17/02 , F16C17/04 , F16C33/043 , F16C33/26 , F16C2206/04 , F16C2220/20 , F16C2240/48 , F16C2352/00 , Y10T428/252 , Y10T428/30
摘要： Embodiments of the present invention relate to diamond-silicon carbide composites, superabrasive compacts including such diamond-silicon carbide composites, and methods of fabricating such diamond-silicon carbide composites and superabrasive compacts. In one embodiment, a superabrasive compact includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix. In another embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to heat and pressure to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要翻译： 本发明的实施方案涉及金刚石 - 碳化硅复合材料，包括这种金刚石 - 碳化硅复合材料的超级磨料压块，以及制造这种金刚石 - 碳化硅复合材料和超级磨料压块的方法。 在一个实施例中，超级磨料致密体包括基底和结合到基底的超研磨台。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过基体分散的纳米级碳化硅晶粒和微米级金刚石颗粒的基体。 在另一个实施例中，公开了一种制造超硬磨料的方法。 形成包含金刚石颗粒和硅的混合物的组件。 硅包括非晶硅，通过研磨方法形成的非晶硅结晶的结晶硅或其组合。 衬底位于该混合物附近。 将组件经受热和压力以形成包含结合到衬底的超级磨料工作台的超硬磨料。 超级磨料台包括金刚石 - 碳化硅复合材料，其包括通过碳化硅颗粒的基体分散的金刚石颗粒。
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公开(公告)号：US20120011779A1
公开(公告)日：2012-01-19
申请号：US13245249
申请日：2011-09-26
CPC分类号： E21B10/46 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.
摘要翻译： 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由参数和特征表征; 小于约1.0。 ＆thetas; = x 6·＆sgr ，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸， 是基本上单峰金刚石晶粒尺寸分布的标准偏差。
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8.发明授权Polycrystalline diamond materials, methods of fabricating same, and applications using same 有权多晶金刚石材料，其制造方法以及使用其的应用公开(公告)号：US08057775B2
公开(公告)日：2011-11-15
申请号：US12148927
申请日：2008-04-22
CPC分类号： E21B10/46 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter θ that is less than about 1.0, where θ = x 6 · σ , x is the average particle size of the diamond particle size distribution, and σ is the standard deviation of the diamond particle size distribution. In an embodiment, the diamond particle size distribution can be generally modeled by the following equation: C P F T 100 = D n - D S n D L n - D S n , wherein CPFT is the cumulative percent finer than, D is diamond grain size, DL is the largest-sized diamond grain, DS is the smallest-sized diamond grain, and n is a distribution modulus.
摘要翻译： 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经历HPHT方法，所形成的PCD材料以及包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，一种方法包括使混合物经受足以形成PCD材料的热和压力。 该混合物包括多个金刚石颗粒，其表现出部分地由参数和等级表征的金刚石颗粒尺寸分布; 小于约1.0，其中＆thetas; = x 6·＆sgr ，x是金刚石粒度分布的平均粒度，＆sgr; 是金刚石粒度分布的标准偏差。 在一个实施方案中，金刚石粒度分布通常可以通过以下等式建模：CéP Phop F笨T 100 = D n -DS n DL n-DS n，其中，CPFT是比 D是金刚石粒度，DL是最大尺寸的金刚石晶粒，DS是最小尺寸的金刚石晶粒，n是分布模量。
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公开(公告)号：US08361429B2
公开(公告)日：2013-01-29
申请号：US13245249
申请日：2011-09-26
CPC分类号： E21B10/46 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.
摘要翻译： 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由参数和特征表征; 小于约1.0。 ＆thetas; = x 6·＆sgr ，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸， 是基本上单峰金刚石晶粒尺寸分布的标准偏差。
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10.发明申请Polycrystalline diamond materials, methods of fabricating same, and applications using same 有权多晶金刚石材料，其制造方法以及使用其的应用公开(公告)号：US20090260895A1
公开(公告)日：2009-10-22
申请号：US12148927
申请日：2008-04-22
CPC分类号： E21B10/46 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter θ that is less than about 1.0, where θ = x 6 · σ , x is the average particle size of the diamond particle size distribution, and σ is the standard deviation of the diamond particle size distribution. In an embodiment, the diamond particle size distribution can be generally modeled by the following equation: CPFT 100 = D n - D S n D L n - D S n , wherein CPFT is the cumulative percent finer than, D is diamond grain size, DL is the largest-sized diamond grain, DS is the smallest-sized diamond grain, and n is a distribution modulus.
摘要翻译： 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经历HPHT方法，所形成的PCD材料以及包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，一种方法包括使混合物经受足以形成PCD材料的热和压力。 该混合物包括多个金刚石颗粒，其具有金刚石颗粒尺寸分布，其部分表征为参数θ小于约1.0，其中θ= x 6。 sigma，x是金刚石粒度分布的平均粒度，σ是金刚石粒度分布的标准偏差。 在一个实施方案中，金刚石粒度分布通常可以通过以下等式建模：CPFT 100 = D n -DS n DL n-DS n，其中CPFT是比D更精细的累积百分比，D是金刚石晶粒尺寸，DL是 最大尺寸的金刚石颗粒，DS是最小尺寸的金刚石颗粒，n是分布模量。
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